C&H Technology CM400DU-12NFH User Manual

6121 Baker Road, Suite 108 Minnetonka, MN 55345
www.chtechnology.com
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
CM400DU-12NFH
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
A
D
(3 PLACES)
Q
LABEL
E2
K
M
E2
FTF
Q
K
Q
E
B
C2E1
Q
Z
PPP
C
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.89±0.01 48.0±0.25
F 0.98 25.0
G 0.24 6.0
H 0.59 15.0
J 0.7854 19.95
K 0.55 14.0
L 0.26 Dia. 6.5 Dia.
M M6 Metric M6
N 1.022 25.95
K
C1
SS
L (4 PLACES)
G2
G
E2
E1
G1
U
Dimensions Inches Millimeters
P 0.71 18.0
Q 0.28 7.0
R 0.874 22.2
S 0.30 7.5
T 0.94 24.0
U 0.11 2.8
V 0.16 4.0
W 0.33 8.5
X 0.46 11.75
Y 0.012 ~ 0 0.3 ~ 0
Z 0.85 21.5
AA 0.69 17.5
C1
H
G
AA
V
S
W
G2 E2
E1 G1
J
N
R
V
Y
X
Dual IGBTMOD™ NFH-Series Module
400 Amperes/600 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse­connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
£ Low V £ Low E £ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ Power Supplies £ Induction Heating £ Welders
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM400DU-12NFH is a 600V (V
CES
IGBTMOD™ Power Module.
Type Current Rating Amperes Volts (x 50)
CM 400 12
CE(sat)
SW(off)
Free-Wheel Diode
Heat Sinking
), 400 Ampere Dual
V
CES
7/11 Rev. 1 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM400DU-12NFH Dual IGBTMOD™ NFH-Series Module
400 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol CM400DU-12NF Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current (TC = 25°C) IC 400* Amperes
Peak Collector Current ICM 800* Amperes
Emitter Current** (TC = 25°C) IE 400* Amperes
Peak Emitter Current** IEM 800* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 960 Watts
Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 1640 Watts
Mounting Torque, M6 Main Terminal 40 in-lb
Mounting Torque, M6 Mounting 40 in-lb
Weight 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
–40 to 125 °C
stg
600 Volts
CES
±20 Volts
GES
2500 Volts
ISO
Static Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
IC = 400A, VGE = 15V, Tj = 125°C 1.95 Volts
Total Gate Charge QG VCC = 300V, IC = 400A, VGE = 15V 2480 nC
Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V 2.6 Volts
VCE = V
CES
VGE = V
GES
IC = 40mA, VCE = 10V 5.0 6.0 7.0 Volts
GE(th)
IC = 400A, VGE = 15V, Tj = 25°C 2.0 2.7 Volts
CE(sat)
, VGE = 0V 1.0 mA
CES
, VCE = 0V 0.5 µA
GES
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time tr VCC = 300V, IC = 400A, 200 ns
Switch Turn-off Delay Time t
Time Fall Time tf Inductive Load Switching Operation, 150 ns
Diode Reverse Recovery Time** trr IE = 400A 200 ns
Diode Reverse Recovery Charge** Qrr — 7.7 — µC
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
— — 110 nf
ies
VCE = 10V, VGE = 0V 7.2 nf
oes
4.0 nf
res
— — 400 ns
d(on)
d(off)
V
GE1
= V
= 15V, RG = 3.1Ω, 700 ns
GE2
rating.
j(max)
7/11 Rev. 12
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
EMITTER CURRENT, I
, (AMPERES)
COLLECTOR CURRENT, I
, (AMPERES)
COLLECTOR-EMITTER
CM400DU-12NFH Dual IGBTMOD™ NFH-Series Module
400 Amperes/600 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Point per Outline Drawing
Thermal Resistance, Junction to Case R
Point per Outline Drawing
Thermal Resistance, Junction to Case R
TC Reference Point Under Chips
Contact Thermal Resistance R
External Gate Resistance RG 1.6 — 16 Ω
Q Per IGBT 1/2 Module, TC Reference — — 0.13 °C/W
th(j-c)
D Per FWDi 1/2 Module, TC Reference — — 0.18 °C/W
th(j-c)
'Q Per IGBT 1/2 Module, 0.076 °C/W
th(j-c)
Per 1/2 Module, Thermal Grease Applied 0.04 °C/W
th(c-f)
OUTPUT CHARACTERISTICS
(TYPICAL)
C
800
600
400
15
VGE = 20V
7.5
13
11
10
9.5 9
8.5
8
200
7
0
0123 45
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
E
2
10
1
10
0 0.5 1.5 2.0 2.51.0 3.0
EMITTER-COLLECTOR VOLTAGE, V
(TYPICAL)
Tj = 25°C
, (VOLTS)
EC
SATURATION VOLTAGE CHARACTERISTICS
3.0
VGE = 15V
2.5
, (VOLTS)
2.0
CE(sat)
1.5
1.0
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE, V
0
0
COLLECTOR-CURRENT, IC, (AMPERES)
3
10
VGE = 0V
, (nF)
res
2
, C
10
oes
, C
ies
1
10
CAPACITANCE, C
0
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
(TYPICAL)
Tj = 25°C
= 125°C
T
j
200
CAPACITANCE VS. V
(TYPICAL)
0
10
SATURATION VOLTAGE CHARACTERISTICS
5
4
, (VOLTS)
CE(sat)
3
2
COLLECTOR-EMITTER
COLLECTOR-EMITTER
(TYPICAL)
Tj = 25°C
IC = 800A
IC = 400A
IC = 160A
1
SATURATION VOLTAGE, V
0
800600400
CE
C
ies
C
oes
C
res
1
10
2
10
6810 1412 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
3
10
2
10
SWITCHING TIME, (ns)
1
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
t
d(off)
t
d(on)
t
f
t
r
(TYPICAL)
2
10
VCC = 300V V
= 15V
GE
R
= 3.1
G
= 125°C
T
j
Inductive Load
3
10
7/11 Rev. 1 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
SWITCHING LOSS, E
, E
, (mJ/PULSE)
CM400DU-12NFH Dual IGBTMOD™ NFH-Series Module
400 Amperes/600 Volts
REVERSE RECOVERY CHARACTERISTICS
3
10
, (ns)
rr
2
10
REVERSE RECOVERY TIME, t
1
10
1
10
2
10
(TYPICAL)
I
rr
t
rr
EMITTER CURRENT, I
10
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
2
VCC = 300V V
= 15V
GE
R
= 3.1
G
T
= 25°C
j
Inductive Load
, (AMPERES)
E
3
10
20
16
, (AMPERES)
, (VOLTS)
rr
GE
12
2
10
8
4
GATE-EMITTER VOLTAGE, V
1
REVERSE RECOVERY CURRENT, I
10
3
10
0
1
10
GATE CHARGE VS. V
GE
IC = 400A
VCC = 200V
VCC = 300V
500 1000 1500 35002500 30002000
0
REVERSE RECOVERY SWITCHING LOSS VS.
GATE CHARGE, QG, (nC)
EMITTER CURRENT
(TYPICAL)
SWITCHING LOSS VS.
COLLECTOR CURRENT
2
10
VCC = 300V V
GE
R
= 3.1
, (mJ/PULSE)
SW( off)
, E
SW( on)
SWITCHING LOSS, E
G
T
= 125°C
j
Inductive Load C Snubber at Bus
1
10
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
1
10
(TYPICAL)
= 15V
E
SW(on)
E
SW(off)
GATE RESISTANCE
(TYPICAL)
E
rr
2
10
3
10
SW(off)
SW(on)
th(j-c')
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
1
10
0
10
0
10
10
• (NORMALIZED VALUE)
th
10
= R
th
Z
10
10
10
0
-1
-2
-3
GATE RESISTANCE, R
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
= 25°C
C
th(j-c)
th(j-c)
(IGBT & FWDi)
-2
10
=
=
-3
Single Pulse T Per Unit Base = R
0.13°C/W (IGBT) R
0.18°C/W (FWDi)
VCC = 300V V I T Inductive Load C Snubber at Bus
1
10
-1
10
-5
10
TIME, (s)
= ±15V
GE
= 400A
C
= 125°C
j
G
E E
, ()
10
10
SW(on)
SW(off)
0
-4
2
10
1
10
10
10
10
-3
10
, (mJ/PULSE)
rr
0
10
REVERSE RECOVERY
SWITCHING LOSS, E
-1
10
10
-1
-2
-3
1
EMITTER CURRENT, IE, (AMPERES)
2
10
E
rr
VCC = 300V V
= 15V
GE
R
= 3.1
G
T
= 125°C
j
Inductive Load C Snubber at Bus
3
10
, (mJ/PULSE)
rr
0
10
REVERSE RECOVERY
SWITCHING LOSS, E
-1
10
0
10
VCC = 300V V
GE
I
= 400A
E
T
= 125°C
j
Inductive Load C Snubber at Bus
1
10
GATE RESISTANCE, R
= 15V
, ()
G
2
10
7/11 Rev. 14
Loading...