C&H Technology CM400DU-12F User Manual

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Suite 108
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CM400DU-12F

C2E1

RTC

RTC

E2

E1

G1

C1

E2

G2

G

H

H

U

U

U

U

AC

AD

M

G2E2E1G1

TC MEASUREMENT POINT

JEB

A

D

KY YK K

NPQQ

V

W

V V

C

L

Y M

R

X

W

F

S - NUTS (3 TYP)

T - (4 TYP)

Z

AB

AA

LABEL

C2E1 C1E2

Q

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0

B 2.44 62.0

C 1.14+0.04/-0.01 29.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 1.88±0.01 48.0±0.25

F 0.67 17.0

G 0.16 4.0

H 0.24 6.0

J 0.59 15.0

K 0.55 14.0

L 0.87 22.0

M 0.33 8.5

N 0.10 2.5

P 0.85 21.5

Dimensions Inches Millimeters

Q 0.98 25.0

R 0.11 2.8

S M6 Metric M6

T 0.26 Dia. Dia. 6.5

U 0.002 0.5

V 0.71 18.0

W 0.28 7.0

X 0.16 4.0

Y 0.3 7.5

Z 0.325 8.25

AA 0.624 15.85

AB 0.709 18.0

AC 0.69 17.5

AD 1.012 25.7

Trench Gate Design
Dual IGBTMOD™

400 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system
assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ UPS
£ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM400DU-12F is a
600V (V
IGBTMOD™ Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 400 12

CE(sat)

Free-Wheel Diode

Heat Sinking

), 400 Ampere Dual

CES

CES

1Rev. 12/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM400DU-12F
Trench Gate Design Dual IGBTMOD™

400 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Ratings Symbol CM400DU-12F Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E SHORT) V

Gate-Emitter Voltage (C-E SHORT) V

Collector Current (Tc = 25°C) IC 400 Amperes

Peak Collector Current (Tj ≤ 150°C) I

Emitter Current** (Tc = 25°C) IE 400 Amperes

Peak Emitter Current** IEM 800* Amperes

Maximum Collector Dissipation (Tc = 25°C) Pc 960 Watts

Mounting Torque, M6 Main Terminal – 40 in-lb

Mounting Torque, M6 Mounting – 40 in-lb

Weight – 400 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

-40 to 125 °C

stg

600 Volts

CES

±20 Volts

GES

CM

2500 Volts

iso

800* Amperes

Static Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

I

Total Gate Charge QG VCC = 300V, IC = 400A, VGE = 15V – 2480 – nC

Emitter-Collector Voltage** VEC I

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES

V

GES

I

GE(th)

IC = 400A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts

CE(sat)

VCE = V

= V

GE

= 40mA, VCE = 10V 5 6 7 Volts

C

= 400A, VGE = 15V, Tj = 125°C – 1.6 – Volts

C

= 400A, VGE = 0V – – 2.6 Volts

E

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 40 µA

GES

rating.

j(max)

2 Rev. 12/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM400DU-12F
Trench Gate Design Dual IGBTMOD™

400 Amperes/600 Volts

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Times Fall Time tf Inductive Load – – 250 ns

Diode Reverse Recovery Time** trr Switching Operation – – 200 ns

Diode Reverse Recovery Charge** Qrr I

– – 110 nf

ies

V

oes

– – 4 nf

res

V

d(on)

R

d(off)

= 10V, VGE = 0V – – 7.2 nf

CE

= 300V, IC = 400A, – – 400 ns

CC

GE1

= V

= 15V, – – 200 ns

GE2

= 3.1Ω, – – 700 ns

G

= 400A – 7.7 – µC

E

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

T

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Q Per IGBT 1/2 Module, Tc Reference – 0.13 °C/W

th(j-c)

D Per FWDi 1/2 Module, Tc Reference – – 0.18 °C/W

th(j-c)

'Q Per IGBT 1/2 Module, – 0.06 °C/W

th(j-c)

Reference Point Under Chip

c

Per Module, Thermal Grease Applied – 0.020 – °C/W

th(c-f)

3Rev. 12/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE, V

GE

20

0 1000 2000 3000

16

12

8

4

0

4000

VCC = 300V

VCC = 200V

IC = 400A

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

0

10

2

10

3

10

2

10

1

10

0

VGE = 0V

10

1

C

ies

C

oes

0 1.0 2.0 3.0 4.0

10

1

10

2

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

0 6 8 1210 181614 20

4

3

2

1

0

Tj = 25°C

IC = 160A

IC = 800A

IC = 400A

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

3

0 200 400

2

1

0

800600

VGE = 15V

T

j

= 25°C

T

j

= 125°C

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 1 2 3 4

0

200

400

600

800

VGE = 20V

15

10

9.5

9

8.5

7.5

8

11

C

res

10

3

10

1

10

2

10

3

10

2

10

1

t

d(off)

t

d(on)

t

r

VCC = 300V
V

GE

= 15V

R

G

= 3.1 Ω

T

j

= 125°C

Inductive Load

t

f

10

3

10

1

10

2

10

3

10

2

10

1

t

rr

10

3

10

2

10

1

I

rr

Tj = 25°C

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Per Unit Base
R

th(j-c)

= 0.13°C/W (IGBT)

R

th(j-c)

= 0.18°C/W (FWDi)
Single Pulse
T

C

= 25°C

VCC = 300V
V

GE

= 15V

R

G

= 3.1 Ω

T

j

= 25°C

Inductive Load

Tj = 25°C

CM400DU-12F
Trench Gate Design Dual IGBTMOD™

400 Amperes/600 Volts

4 Rev. 12/09