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CM35MXA-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
A
D
E
F
KK
P1(48-49)
B(52-53)
GB(41)
N1(44-45)
G
K
DETAIL "A"
K
KM
DETAIL "B"
KKKK
ClampDi
GUP(13)
U(14-15)
GUN(40)
*Use both two terminals (R/S/T/P/N/P1/B/N1/U/V/W)
for the external connection.
K
K
30
29
K
Q S
28
27
L
K
Y
K
KK
AE
E*(39)
R B
26
25
24
K
23
AF
N (4 PLACES)
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to ±0.4
FWDi
GVP(18)
V(19-20) W(24-25)
GVN(33)
GWP(23)
GWN(31)
J
H
X
54
55
56
57
P
58
59
60
61
AD
R
(1-2)
LLL
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
53
W
K
K
L
K
K
12345678910111213141516171819202122
T
LLLL
P(54-56)
T
S
(9-10)
(5-6)
ConvDi
N(59-61)
AG
AH
K
AA
AB
AC
DETAIL "A"
C
Z
AN
AM
AL
DETAIL "B"
TH
TH1
(29)
(28)
NTC
E(32)
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.49 114.05
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.16 4.06
J 0.51 13.09
K 0.15 3.81
L 0.45 11.43
M 0.9 22.86
N 0.22 Dia. 5.5 Dia.
P 2.13 54.2
Q 1.53 39.0
R 1.97±0.02 50.0±0.5
S 2.26 57.5
T 0.30 7.75
Dimensions Inches Millimeters
V 0.088 Dia. 2.25 Dia.
W 0.46 11.66
X 0.16 4.2
Y 0.59 15.0
Z 0.27 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.12 3.0
AD 0.14 3.5
AE 0.03 0.8
AF 0.15 3.75
AG 0.05 1.15
AH 0.025 0.65
AJ 0.29 7.4
AK 0.05 1.2
AL 0.49 12.5
AM 0.12 3.0
AN 0.17 Dia. 4.3 Dia.
U 0.102 Dia. 2.6 Dia.
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
35 Amperes/1200 Volts
AK
U
V
Description:
CIBs are low profile and thermally
efficient. Each module consists of
a three-phase diode converter section, a three-phase inverter section
and a brake circuit. A thermistor is
included in the package for sensing the baseplate temperature. 6th
Generation CSTBT chips yield low
loss.
2
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM35MXA-24S is a 1200V (V
35 Ampere CIB Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 35 24
),
CES
V
CES
105/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM35MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
35 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 125°C)
*2,*3
IC 35 Amperes
Collector Current (Pulse, Repetitive)*4 I
Total Power Dissipation (TC = 25°C)
Emitter Current (TC = 25°C)
*2,*3
P
*2,*3
I
Emitter Current (Pulse, Repetitive)*4 I
Maximum Junction Temperature T
1200 Volts
CES
±20 Volts
GES
70 Amperes
CRM
355 Watts
tot
*1
35 Amperes
E
*1
70 Amperes
ERM
175 °C
j(max)
Brake Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 125°C)
*2,*3
IC 35 Amperes
Collector Current (Pulse, Repetitive)*4 I
Total Power Dissipation (TC = 25°C)
*2,*3
P
Repetitive Peak Reverse Voltage (VGE = 0V) V
Forward Current (TC = 25°C)
*2,*3
I
Forward Current (Pulse, Repetitive)*4 I
Maximum Junction Temperature T
1200 Volts
CES
±20 Volts
GES
70 Amperes
CRM
355 Watts
tot
1200 Volts
RRM
*1
35 Amperes
F
*1
70 Amperes
FRM
175 °C
j(max)
Converter Part ConvDi
Characteristics Symbol Rating Units
Repetitive Peak Reverse Voltage V
Recommended AC Input Voltage Ea 440 V
DC Output Current (3-phase Full Wave Rectifying, TC = 125°C)
*2,*3
IO 35 Amperes
Surge Forward Current (Sine Half Wave 1 Cycle Peak Value, f = 60 Hz, Non-repetitive) I
Current Square Time (Value for One Cycle of Surge Current) I
Maximum Junction Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*4 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
j(max)
) rating.
j(max)
rating.
2 05/11 Rev. 2
0 0
18.4
20.4
30.3
31.3
43.9
44.9
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
1200 Volts
RRM
350 Amperes
FSM
2
510 A2s
t
150 °C
j(max)
21.1033.7
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
53
54
Tr
Di
55
Br
Br
56
57
CRRNCRSNCR
58
59
60
61
0
TN
CRRPCRSPCR
TP
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
37.2
28.1
46.3
72.3
DiUNDi
VN
TrUNTr
VN
UP
74.2
66.3
107.2
81.8
91.8
99.2
30
Tr
29
Di
WN
28
Th
WN
27
26
Di
25
WP
Tr
24
DiVPTrVPDiUPTr
WP
23
LABEL SIDE
83.0
90.9
99.6
106.2
19.6
24.9
26.2
40.8
43.8
22.0
25.8
34.2
RMS