C&H Technology CM30TF-12H User Manual

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Suite 108
Minnetonka, MN 55345

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM30TF-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

S - DIA.
(2 TYP.)

G

J

M

P

BuP

BuN

B

R R R

BuP

EuP

BvP

BvN

H H

C

EvP

v

EvN

EvP

EvN

P

UVW

N

BuN

EuN

K

.250 TAB

BvP

EuP

u

BvN

EuN

N

BwP

BwN

EwP

EwN

N

.110 TAB

PQQ

BwP

BwN

EwP

w

EwN

L

E

D

F

R

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.21 107.0
B 3.66±0.01 93.0±0.3
C 3.19 81.0
D 1.77 45.0
E 1.18 30.0
F 1.04 26.5
G 1.01 25.6
H 0.85 21.5

Dimensions Inches Millimeters

K 0.79 20.0
L 0.71 18.0
M 0.69±0.02 17.5±0.5
N 0.69 17.5
P 0.63 16.0
Q 0.55 14.0
R 0.30 7.5
S 0.22 Dia. Dia. 5.5

J 0.83 21.0

Six-IGBT IGBTMOD™
H-Series Module

30 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM30TF-12H
is a 600V (V
IGBT IGBTMOD™ Power Module.

Type Current Rating V

CM 30 12

CE(sat)

(150ns) Free-Wheel Diode
(15-20kHz)
Heat Sinking

), 30 Ampere Six-

CES

Amperes (30) Volts (x 50)

CES

303

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM30TF-12H
Six-IGBT IGBTMOD™ H-Series Module

30 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM30TF-12H Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (Typical) – 260 Grams
V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

RMS

–40 to 150 °C
–40 to 125 °C

600 Volts
±20 Volts

30 Amperes

60* Amperes

30 Amperes

60* Amperes

150 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5

GES

IC = 3mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 30A, VGE = 15V – 2.1 2.8** Volts

µ

A

IC = 30A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Diode Forward Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

FM

VCC = 300V, IC = 30A, VGS = 15V – 90 – nC

IE = 30A, VGS = 0V – – 2.8 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V, f = 1MHz – – 1.1 nF

VCC = 300V, IC = 30A, – – 300 ns

V

= V

GE1

= 15V, RG = 21Ω – – 200 ns

GE2

IE = 30A, diE/dt = –60A/µs – – 110 ns
IE = 30A, diE/dt = –60A/µs – 0.08 –

– – 3.0 nF

– – 0.6 nF
– – 120 ns

– – 300 ns

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.058 °C/W

Per IGBT – – 0.80 °C/W

Per FWDi – – 2.00 °C/W

304

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM30TF-12H
Six-IGBT IGBTMOD™ H-Series Module

30 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

60

50

40

, (AMPERES)

C

Tj = 25oC

VGE = 20V

15

12

11

30

20

10

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

10

9

7

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 60A

IC = 30A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

(TYPICAL)

IC = 12A

TRANSFER CHARACTERISTICS

(TYPICAL)

60

VCE = 10V

50

40

, (AMPERES)

C

Tj = 25°C

= 125°C

T

j

30

20

10

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

2

10

Tj = 25°C

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

(TYPICAL)

(TYPICAL)

1

10

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

5

VGE = 15V

Tj = 25°C

= 125°C

4

, (VOLTS)

CE(sat)

3

T

j

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0

10 20 30 40 50 60

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

1

10

, (nF)

res

0

10

, C

oes

, C

ies

-1

10

CAPACITANCE, C

VGE = 0V
f = 1MHz

-2

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

(TYPICAL)

0

10

GATE CHARGE, V

20

CE

C

ies

C

oes

C

res

1

10

GE

2

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

COLLECTOR CURRENT, IC, (AMPERES)

t

t

d(off)

d(on)

t

f

VCC = 300V

= ±15V

V

GE

= 21Ω

R

t

r

10

G

= 125°C

T

j

1

10

, (ns)

rr

10

REVERSE RECOVERY TIME, t

2

10

2

di/dt = -60A/µsec

= 25°C

T

j

1

0

10

EMITTER CURRENT, IE, (AMPERES)

I

rr

10

t

rr

10

1

10

2

10

16

, (AMPERES)

, (VOLTS)

rr

GE

12

0

8

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

-1

0

020

VCC = 200V

VCC = 300V

40 60 80 100 120

GATE CHARGE, QG, (nC)

305

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM30TF-12H
Six-IGBT IGBTMOD™ H-Series Module

30 Amperes/600 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.8°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 2.0°C/W

10

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

306