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CM300DY-34A
A
W
FF
B
N
J
L
(4 PLACES)
D
M NUTS
(3 PLACES)
G
G
H
KKK
PPP
T THICK
U WIDTH
QQ
V
C
S
R
G2
E2
E1
G1
C1E2C2E1
LABEL
C2E1 E2 C1
G2
E2
E1
G1
E
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
A-Series Module
300 Amperes/1700 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.98 25.0
G 0.24 6.0
H 0.59 15.0
J 0.81 20.5
K 0.55 14.0
L 0.26 Dia. Dia. 6.5
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ UPS
Dimensions Inches Millimeters
M M6 Metric M6
N 1.18 30.0
P 0.71 18.0
Q 0.28 7.0
R 0.83 21.2
S 0.33 8.5
T 0.02 0.5
U 0.110 2.8
V 0.16 4.0
W 0.85 21.5
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you
desire from the table below -i.e.
CM300DY-34A is a 1700V (V
CES
300 Ampere Dual IGBTMOD™
Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 300 34
V
CES
),
101/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM300DY-34A
Dual IGBTMOD™ A-Series Module
300 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol CM300DY-34A Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current (DC, TC = 108°C)*4 I
Peak Collector Current (Pulse Repetition)*2 I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)*2,*4 P
Emitter Current (TC = 25°C) IE*1 300 Amperes
Peak Emitter Current (Pulse Repetition)*2 I
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 580 Grams
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V
–40 to 125 °C
stg
1700 Volts
CES
±20 Volts
GES
300 Amperes
C
600 Amperes
CM
2900 Watts
C
*1 600 Amperes
EM
3500 Volts
ISO
Static Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
I
V
CES
V
GES
I
GE(th)
IC = 300A, VGE = 15V, Tj = 25°C*3 — 2.2 2.8 Volts
CE(sat)
C
= V
CE
GE
= 30mA, VCE = 10V 5.5 7.0 8.5 Volts
C
, VGE = 0V — — 1.0 mA
CES
= V
, VCE = 0V — — 2.0 µA
GES
= 300A, VGE = 15V, Tj = 125°C*3 — 2.45 — Volts
Total Gate Charge QG VCC = 1000V, IC = 300A, VGE = 15V — 2000 — nC
Emitter-Collector Voltage VEC*1 I
= 300A, VGE = 0V*3 — — 3.0 Volts
E
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time tr V
Switch Turn-off Delay Time t
Time Fall Time tf Inductive Load — — 350 ns
Diode Reverse Recovery Time trr*1 Switching Operation, — — 450 ns
Diode Reverse Recovery Charge Qrr*1 I
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
— — 74.0 nf
ies
V
oes
— — 1.6 nf
res
— — 950 ns
d(on)
V
d(off)
GE1
= 10V, VGE = 0V — — 8.4 nf
CE
= 1000V, IC = 300A, — — 300 ns
CC
= V
= 15V, RG = 1.6Ω, — — 1000 ns
GE2
= 300A — 30 — µC
E
rating.
j(max)
2 01/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
0
10
2
10
2
10
1
10
0
10
-1
10
1
01 324
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
8
6
4
2
0
Tj = 25°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
600
500
400
300
200
100
0
VGE = 10V
Tj = 25°C
T
j
= 125°C
VGE = 0V
C
ies
C
oes
C
res
IC = 600A
IC = 300A
IC = 120A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
048121620
048121620
100
0
VGE =
20V
10
11
12
15
13
9
8
Tj = 25
o
C
200
300
400
500
600
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
5
4
3
0
2
1
0
600400
VCE = 15V
Tj = 25°C
T
j
= 125°C
200
10
-1
Tj = 25°C
T
j
= 125°C
CM300DY-34A
Dual IGBTMOD™ A-Series Module
300 Amperes/1700 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
External Gate Resistance RG 1.6 — 16 Ω
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Q Per IGBT*4 — — 0.043 °C/W
th(j-c)
D Per FWDi*4 — — 0.072 °C/W
th(j-c)
Thermal Grease Applied*4,*5 — — — °C/W
th(c-f)
301/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
0
10
-5
10
-4
10
-3
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
• (NORMALIZED VALUE)
Single Pulse
T
C
= 25°C
Per Unit Base =
R
th(j-c)
=
0.043°C/W
(IGBT)
R
th(j-c)
=
0.072°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c')
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE VS. V
GE
20
0
16
12
8
4
0
1000 30002000
VCC = 1000V
EMITTER CURRENT, IC, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
2
10
1
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
VCC = 1000V
V
GE
= 15V
R
G
= 1.6Ω
T
j
= 25°C
Inductive Load
VCC = 800V
IC = 300A
10
3
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS, E
on
, E
off
, E
rr
, (mJ/PULSE)
10
3
10
1
10
2
10
1
10
2
10
0
VCC = 1000V
V
GE
= 15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive Load
VCC = 1000V
V
GE
= 15V
I
C
= 300A
T
j
= 125°C
Inductive Load
10
3
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, E
on
, E
off
, E
rr
, (mJ/PULSE)
10
3
10
0
10
1
10
2
10
1
10
2
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
I
rr
t
rr
COLLECTOR CURRENT, I
C
, (AMPERES)
10
4
10
3
10
1
10
2
10
2
10
1
SWITCHING TIME, t
d(on)
, t
r
, t
d(off)
, t
f
, (ns)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
d(off)
t
d(on)
t
r
VCC = 1000V
V
GE
= 15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive Load
t
f
10
3
GATE RESISTANCE, R
G
, (Ω)
10
4
10
0
10
1
10
3
10
2
10
1
SWITCHING TIME, t
d(on)
, t
r
, t
d(off)
, t
f
, (ns)
SWITCHING TIME VS.
GATE RESISTANCE (TYPICAL)
t
d(off)
t
d(on)
E
on
E
off
E
on
E
off
E
rr
t
r
VCC = 1000V
V
GE
= 15V
I
C
= 300A
T
j
= 125°C
Inductive Load
t
f
10
2
E
rr
CM300DY-34A
Dual IGBTMOD™ A-Series Module
300 Amperes/1700 Volts
4 01/10 Rev. 1