C&H Technology CM300DY-28H User Manual

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CM300DY-28H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
C2E1
C F
S - M6 THD. (3 TYP)
E
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0 B 3.661±0.01 93.0±0.25 C 3.15 80.0 D 2.441±0.01 62.0±0.25 E 1.18 Max. 30.0 Max. F 1.18 30.0 G 0.98 25.0 H 0.85 21.5
J 0.83 21.2
N
K
J
B
M
E2 C1
G
G
K
E2 C1
Dimensions Inches Millimeters
C2E2
E1C1
H
N
K
K 0.71 18.0
L 0.59 15.0 M 0.55 14.0 N 0.28 7.0
P 0.26 Dia. Dia. 6.5 Q 0.33 8.5 R 0.24 6.0
S M6 Metric M6
P - DIA. (4 TYP.)
.110 TAB
Q
R
L
D
R
N
E1C1 E2 C2
Dual IGBTMOD™ H-Series Module
300 Amperes/1400 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse­connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
Low Drive PowerLow VDiscrete Super-Fast Recovery
High Frequency OperationIsolated Baseplate for Easy
Applications:
AC Motor ControlMotion/Servo ControlUPSWelding Power SuppliesLaser Power Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM300DY-28H is a 1400V (V Dual IGBTMOD™ Power Module.
Type Current Rating V
CM 300 28
CE(sat)
(135ns) Free-Wheel Diode (20-25kHz) Heat Sinking
), 300 Ampere
CES
Amperes Volts (x 50)
CES
289
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-28H Dual IGBTMOD™ H-Series Module
300 Amperes/1400 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM300DY-28H Units
Junction Temperature T Storage T emperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage V Collector Current I Peak Collector Current I Diode Forward Current I Diode Forward Surge Current I Power Dissipation P
j
stg CES GES
C
CM
F
FM
d
Max. Mounting Torque M6 Terminal Screws 26 in-lb Max. Mounting Torque M6 Mounting Screws 26 in-lb Module Weight (Typical) 500 Grams V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C –40 to 125 °C
1400 Volts
±20 Volts 300 Amperes
600* Amperes
300 Amperes 600* Amperes 2100 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I Gate Leakage Current I Gate-Emitter Threshold V oltage V Collector-Emitter Saturation Voltage V
CES GES
GE(th)
CE(sat)
VCE = V VGE = V
, VGE = 0V 1.0 mA
CES
, VCE = 0V 0.5
GES
µ
IC = 30mA, VCE = 10V 5.0 6.5 8.0 Volts
IC = 300A, VGE = 15V 3.1 4.2** Volts
A
IC = 300A, VGE = 15V, Tj = 150°C 2.95 Volts Total Gate Charge Q Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 600V, IC = 300A, VGE = 15V 1530 nC
IE = 300A, VGE = 0V 3.8 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Resistive Turn-on Delay Time t
d(on)
Load Rise Time t Switching Turn-off Delay Time t
d(off)
Times Fall Time t Diode Reverse Recovery Time t Diode Reverse Recovery Charge Q
ies oes res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz 21 nF
VCC = 800V, IC = 300A, 500 ns
V
= V
GE1
= 15V, RG = 1.0 350 ns
GE2
IE = 300A, diE/dt = –600A/µs 300 ns IE = 300A, diE/dt = –600A/µs 3.0
60 nF
–– 12nF – 250 ns
500 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R Thermal Resistance, Junction to Case R Contact Thermal Resistance R
th(j-c) th(j-c) th(c-f)
Per Module, Thermal Grease Applied 0.035 °C/W
Per IGBT 0.06 °C/W
Per FWDi 0.12 °C/W
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-28H Dual IGBTMOD™ H-Series Module
300 Amperes/1400 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
600
500
400
, (AMPERES)
C
Tj = 25oC
VGE = 20V
15
13
300
200
100
COLLECTOR CURRENT, I
0
0246810
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SATURATION VOLTAGE CHARACTERISTICS
COLLECTOR-EMITTER
7
(TYPICAL)
10
8
, (VOLTS)
CE(sat)
6
Tj = 25°C
IC = 300A
IC = 600A
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
4
10
VCC = 800V
= ±15V
V
GE
R
= 1.0
G
= 125°C
T
j
3
10
2
10
SWITCHING TIME, (ns)
1
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
(TYPICAL)
10
t
2
d(off)
IC = 120A
t
f
t
d(on)
t
r
TRANSFER CHARACTERISTICS
(TYPICAL)
600
12
11
10
9 8
, (AMPERES)
COLLECTOR CURRENT, I
, (ns)
rr
VCE = 10V
480
C
360
Tj = 25°C
= 125°C
T
j
240
120
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
, (AMPERES)
E
2
10
EMITTER CURRENT, I
1
10
1.0 1.5 2.0 2.5 3.5 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
3
10
2
10
(TYPICAL)
(TYPICAL)
3.0
I
rr
t
rr
2
10
1
10
SATURATION VOLTAGE CHARACTERISTICS
5
4
, (VOLTS)
CE(sat)
3
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
0 120 240 360 480
2
10
, (nF)
res
1
10
, C
oes
, C
ies
0
10
CAPACITANCE, C
-1
10
10
20
16
, (VOLTS)
GE
12
COLLECTOR-EMITTER
(TYPICAL)
VGE = 15V
Tj = 25°C
= 125°C
T
j
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
VGE = 0V f = 1MHz
-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
IC = 300A
0
10
GATE CHARGE, V
VCC = 600V
CE
C
C
C
1
10
GE
VCC = 800V
600
ies
oes
res
2
10
8
REVERSE RECOVERY TIME, t
3
10
1
10
10
di/dt = -600A/µsec
= 25°C
T
j
1
EMITTER CURRENT, IE, (AMPERES)
10
2
3
10
10
4
GATE-EMITTER VOLTAGE, V
0
0
0 400 1200
800 1600
GATE CHARGE, QG, (nC)
2000
2400
291
Page 5
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-28H Dual IGBTMOD™ H-Series Module
300 Amperes/1400 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
-3
10
1
10
th(j-c)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
= R
10
th
Z
-3
10
(IGBT)
-2
10
-1
10
th(j-c)
-5
10
TIME, (s)
10
= 0.06°C/W
10
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
0
-4
1
10
-1
10
-2
10
-3
10
-3
10
-3
10
1
10
th(j-c)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
= R
10
th
Z
-3
10
(FWDi)
-2
10
-1
10
th(j-c)
-5
10
TIME, (s)
0
10
= 0.12°C/W
-4
10
1
10
-1
10
-2
10
-3
10
-3
10
292
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