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CM300DY-24H
M
E
Q
A
N
K
N
K
N
B
G
J
C F
R
R
G
D
H
L
.110 TAB
K
P - DIA.
(4 TYP.)
C2E1
E1G1 E2 G2
E2 C1
S - M6 THD.
(3 TYP)
G2E2
C2E1
E1G1
E2 C1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.661±0.01 93.0±0.25
C 3.15 80.0
D 2.441±0.01 62.0±0.25
E 1.18 Max. 30.0 Max.
F 1.18 30.0
G 0.98 25.0
H 0.85 21.5
J 0.83 21.2
Dimensions Inches Millimeters
K 0.71 18.0
L 0.59 15.0
M 0.55 14.0
N 0.28 7.0
P 0.26 Dia. Dia. 6.5
Q 0.33 8.5
R 0.24 6.0
S M6 Metric M6
Dual IGBTMOD™
H-Series Module
300 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
£ High Frequency Operation
(20-25kHz)
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from the
table below -i.e. CM300DY-24H is
a 1200V (V
IGBTMOD™ Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 300 24
CE(sat)
), 300 Ampere Dual
CES
V
CES
1Rev. 5/07

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DY-24H
Dual IGBTMOD™ H-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM300DY-24H Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current IC 300 Amperes
Peak Collector Current ICM 600* Amperes
Diode Forward Current IF 300 Amperes
Diode Forward Surge Current IFM 600* Amperes
Power Dissipation Pd 2100 Watts
Max. Mounting Torque M6 Terminal Screws – 26 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 500 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
–40 to 125 °C
stg
1200 Volts
CES
±20 Volts
GES
2500 Volts
RMS
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
VCE = V
CES
VGE = V
GES
IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts
GE(th)
IC = 300A, VGE = 15V – 2.5 3.2** Volts
CE(sat)
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5 μA
GES
IC = 300A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QG VCC = 600V, IC = 300A, VGS = 15V – 1500 – nC
Diode Forward Voltage VFM IE = 300A, VGS = 0V – – 3.5 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time tr VCC = 600V, IC = 300A, – – 500 ns
Switching Turn-off Delay Time t
Times Fall Time tf – – 350 ns
Diode Reverse Recovery Time trr IE = 300A, diE/dt = –600A/μs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 300A, diE/dt = –600A/μs – 2.23 – μC
– – 60 nF
ies
VGE = 0V, VCE = 10V, f = MHz – – 21 nF
oes
– – 12 nF
res
– – 250 ns
d(on)
d(off)
V
GE1
= V
= 15V, RG = 1.0Ω – – 350 ns
GE2
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
2 Rev. 5/07
Per IGBT – – 0.06 °C/W
th(j-c)
Per FWDi – – 0.12 °C/W
th(j-c)
Per Module, Thermal Grease Applied – – 0.035 °C/W
th(c-f)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 2 4 6 8 10
360
120
0
VGE = 20V
15
12
11
8
7
Tj = 25°C
240
480
600
10
9
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0 4 8 12 16 20
480
360
240
120
0
VCE = 10V
Tj = 25°C
Tj = 125°C
600
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 120 240 360 480
4
3
2
1
0
600
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0 4 8 12 16 20
8
6
4
2
0
Tj = 25°C
IC = 120A
IC = 600A
IC = 300A
0 0.8 1.6 2.4 3.2 4.0
10
1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
VGE = 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
di/dt = -600A/Msec
Tj = 25°C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 600 1200
16
12
8
4
0
1800 2400
VCC = 600V
VCC = 400V
IC = 300A
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
VCC = 600V
VGE = ±15V
RG = 17
Tj = 125°C
t
f
SWITCHING TIME, (ns)
CM300DY-24H
Dual IGBTMOD™ H-Series Module
300 Amperes/1200 Volts
3Rev. 5/07

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
TC = 25oC
Per Unit Base = R
th(j-c)
= 0.06°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
TC = 25oC
Per Unit Base = R
th(j-c)
= 0.12°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
CM300DY-24H
Dual IGBTMOD™ H-Series Module
300 Amperes/1200 Volts
4 Rev. 5/07