C&H Technology CM300DU-24NFH User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

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Please contact the C&H Technology team for the following questions -

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Application

Assembly

Availability

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CM300DU-24NFH

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A

D

(3 PLACES)

Q

LABEL

E2

K

M

E2

FTF

Q

K

Q

E

B

C2E1

Q

Z

PPP

C

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0

B 2.44 62.0

C 1.14+0.04/-0.02 29.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 1.89±0.01 48.0±0.25

F 0.98 25.0

G 0.24 6.0

H 0.59 15.0

J 0.7854 19.95

K 0.55 14.0

L 0.26 Dia. 6.5 Dia.

M M6 Metric M6

N 1.022 25.95

K

C1

SS

L
(4 PLACES)

G2

G

E2

E1

G1

U

Dimensions Inches Millimeters

P 0.71 18.0

Q 0.28 7.0

R 0.874 22.2

S 0.30 7.5

T 0.94 24.0

U 0.11 2.8

V 0.16 4.0

W 0.33 8.5

X 0.46 11.75

Y 0.012 ~ 0 0.3 ~ 0

Z 0.85 21.5

AA 0.69 17.5

C1

H

G

AA

V

S

W

G2
E2

E1
G1

J

N

R

V

Y

X

Dual IGBTMOD™
NFH-Series Module

300 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules are
designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low E
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ Power Supplies
£ Induction Heating
£ Welders

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM300DU-24NFH is a 1200V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 300 24

SW(off)

Free-Wheel Diode

Heat Sinking

), 300 Ampere Dual

V

CES

7/11 Rev. 1 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300DU-24NFH
Dual IGBTMOD™ NFH-Series Module

3 00 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM300DU-24NF Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (TC = 25°C) IC 300* Amperes

Peak Collector Current ICM 600* Amperes

Emitter Current** (TC = 25°C) IE 300* Amperes

Peak Emitter Current** IEM 600* Amperes

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts

Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 1900 Watts

Mounting Torque, M6 Main Terminal — 40 in-lb

Mounting Torque, M6 Mounting — 40 in-lb

Weight — 400 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

–40 to 125 °C

stg

1200 Volts

CES

±20 Volts

GES

2500 Volts

ISO

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

IC = 300A, VGE = 15V, Tj = 125°C — 5.0 — Volts

Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 1360 — nC

Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V — — 3.5 Volts

VCE = V

CES

VGE = V

GES

IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts

GE(th)

IC = 300A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts

CE(sat)

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 1.0 µA

GES

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr VCC = 600V, IC = 300A, — — 80 ns

Switch Turn-off Delay Time t

Time Fall Time tf Inductive Load Switching Operation, — — 150 ns

Diode Reverse Recovery Time** trr IE = 300A — — 250 ns

Diode Reverse Recovery Charge** Qrr — 13 — µC

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

— — 47 nf

ies

VCE = 10V, VGE = 0V — — 4.0 nf

oes

— — 0.9 nf

res

— — 300 ns

d(on)

d(off)

V

GE1

= V

= 15V, RG = 1.0Ω, — — 500 ns

GE2

rating.

j(max)

7/11 Rev. 12

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

COLLECTOR-EMITTER

COLLECTOR-EMITTER

CM300DU-24NFH
Dual IGBTMOD™ NFH-Series Module

300 Amperes/1200 Volts

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

TC Reference Point Under Chips

Thermal Resistance, Junction to Case R

TC Reference Point Under Chips

Contact Thermal Resistance R

External Gate Resistance RG 1.0 — 10 Ω

Q Per IGBT 1/2 Module, TC Reference — — 0.11 °C/W

th(j-c)

D Per FWDi 1/2 Module, TC Reference — — 0.18 °C/W

th(j-c)

'Q Per IGBT 1/2 Module, — — 0.066 °C/W

th(j-c)

'D Per FWDi 1/2 Module, — — 0.1 °C/W

th(j-c)

Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W

th(c-f)

OUTPUT CHARACTERISTICS

(TYPICAL)

600

500

Tj = 25°C

VGE = 20V

15

400

, (AMPERES)

C

300

200

100

COLLECTOR CURRENT, I

0

0246 810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 600A

IC = 300A

IC = 120A

2

SATURATION VOLTAGE, V

0

6810 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

TRANSFER CHARACTERISTICS

14

13

12

11

10

9

8

600

VGE = 10V

500

400

, (AMPERES)

C

300

200

100

COLLECTOR CURRENT, I

0

0

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FORWARD CHARACTERISTICS

3

10

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

01 3425

EMITTER-COLLECTOR VOLTAGE, V

(TYPICAL)

Tj = 25°C

= 125°C

T

j

5

10

FREE-WHEEL DIODE

(TYPICAL)

Tj = 25°C

= 125°C

T

j

15

EC

20

, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

9

VGE = 15V

)

8

7

, (VOLTS

6

CE(sat)

Tj = 25°C

= 125°C

T

j

(TYPICAL)

5

4

3

COLLECTOR-EMITTER

2

1

SATURATION VOLTAGE, V

0

100

0

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

200

COLLECTOR-CURRENT, IC, (AMPERES)

VGE = 0V

300

CAPACITANCE VS. V

(TYPICAL)

0

10

10

600400 500

CE

C

ies

C

oes

C

res

1

2

10

7/11 Rev. 1 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

SWITCHING LOSS, E

, E

, (mJ/PULSE)

SWITCHING TIME, (ns)

REVERSE RECOVERY

CM300DU-24NFH
Dual IGBTMOD™ NFH-Series Module

3 00 Amperes/1200 Volts

10

10

10

10

10

SW(off)

SW(on)

10

10

10

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

2

1

0

1

10

COLLECTOR CURRENT, I

2

VCC = 600V
V

GE

R

= 1.0Ω

G

= 125°C

T

j

Inductive Load
C Snubber at Bus

1

0

1

10

COLLECTOR CURRENT, IC, (AMPERES)

REVERSE RECOVERY SWITCHING LOSS VS.

2

(TYPICAL)

t

f

t

r

2

10

SWITCHING LOSS VS.

COLLECTOR CURRENT

(TYPICAL)

= ±15V

E

SW(on)

E

SW(off)

2

10

GATE RESISTANCE

(TYPICAL)

t

d(off)

t

d(on)

VCC = 600V
V

= ±15V

GE

R

= 1.0Ω

G

= 125°C

T

j

Inductive Load

, (AMPERES)

C

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

2

10

(TYPICAL)

I

rr

t

rr

10

10

3

2

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

GATE CHARGE VS. V

IC = 300A

GE

VCC = 400V

VCC = 600V

8

VCC = 600V
V

= ±15V

GE

R

= 1.0Ω

REVERSE RECOVERY TIME, t

1

3

10

3

10

10

10

2

10

, (mJ/PULSE)

SW(off)

, E

1

10

SW(on)

SWITCHING LOSS, E

0

10

10

10-310

0

th(j-c')

10

1

EMITTER CURRENT, I

SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

0

GATE RESISTANCE, R

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

-2

T
Inductive Load

2

10

, (AMPERES)

E

VCC = 600V
V

GE

I

= 300A

C

= 125°C

T

j

Inductive Load
C Snubber at Bus

1

10

-1

10

G

= 25°C

j

= ±15V

E

SW(on)

E

SW(off)

, (Ω)

G

0

10

10

3

10

2

10

1

10

4

GATE-EMITTER VOLTAGE, V

1

REVERSE RECOVERY CURRENT, I

0

REVERSE RECOVERY SWITCHING LOSS VS.

2

10

, (mJ/PULSE)

rr

1

10

REVERSE RECOVERY

SWITCHING LOSS, E

0

10

10

400 800 1200 20001600

0

GATE CHARGE, QG, (nC)

EMITTER CURRENT

(TYPICAL)

1

EMITTER CURRENT, IE, (AMPERES)

VCC = 600V
V

= ±15V

GE

R

= 1.0Ω

G

= 125°C

T

j

Inductive Load
C Snubber at Bus

2

10

E

rr

3

10

, (mJ/PULSE)

rr

10

SWITCHING LOSS, E

10

-1

10

E

1

0

0

10

GATE RESISTANCE, RG, (Ω)

rr

VCC = 600V
V

= ±15V

GE

I

= 300A

E

= 125°C

T

j

Inductive Load
C Snubber at Bus

1

10

2

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

th(j-c)

• (NORMALIZED VALUE)

-2

0.11°C/W

10

th

(IGBT)

= R

th

R

th(j-c)

Z

0.18°C/W
(FWDi)

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

=

=

-5

10

TIME, (s)

-4

10

-1

10

-2

10

-3

10

-3

10

7/11 Rev. 14