C&H Technology CM300DU-12F User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM300DU-12F

CM

LABEL

C2E1 E2

C

L

C1

G1

E1

E2

G2

C2E1

RT

C

RT

C

E2

E1

G1

C1

E2

G2

N

M

F

K

V

R

W W

W

KK

Q Q

E

P

A

D

B

C

L

G

H

H

J

X X

TC MEASURED POINT

U (4 PLACES)

T - (4 TYP.)

S - NUTS
(3 TYP)

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

Trench Gate Design
Dual IGBTMOD™

300 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con­sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-con­nected super-fast recovery free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0

B 2.44 62.0

C 1.14 +0.04/-0.02 29.0 +1.0/-0.5

D 3.66±0.01 93.0±0.25

E 1.88±0.01 48.0±0.25

F 0.67 17.0

G 0.16 4.0

H 0.24 6.0

J 0.59 15.0

K 0.55 14.0

L 0.87 22.0

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ UPS

M 0.33 8.5

N 0.10 2.5

P 0.85 21.5

Q 0.98 25.0

R 0.11 2.8

S M6 M6

T 0.26 Dia. 6.5 Dia.

Dimensions Inches Millimeters

U 0.02 0.5

V 0.62 15.85

W 0.71 18.0

X 0.28 7.0

£ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM300DU-12F is a
600V (V

), 300 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 300 12

CES

1

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM300DU-12F
Trench Gate Design Dual IGBTMOD™

300 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol CM300DU-12F Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E SHORT) V

Gate-Emitter Voltage (C-E SHORT) V

Collector Current (Tc = 25°C) IC 300 Amperes

Peak Collector Current (Tj ≤ 150°C) I

Emitter Current** (Tc = 25°C) IE 300 Amperes

Peak Emitter Current** IEM 600* Amperes

Maximum Collector Dissipation (Tc = 25°C) Pc 830 Watts

Mounting Torque, M6 Main Terminal – 40 in-lb

Mounting Torque, M6 Mounting – 40 in-lb

Weight – 400 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

-40 to 125 °C

stg

600 Volts

CES

±20 Volts

GES

CM

2500 Volts

iso

600* Amperes

Static Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

IC = 300A, VGE = 15V, Tj = 125°C – 1.6 – Volts

Total Gate Charge QG VCC = 300V, IC = 300A, VGE = 15V – 1860 – nC

Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V – – 2.6 Volts

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES

VGE = V

GES

IC = 30mA, VCE = 10V 5 6 7 Volts

GE(th)

IC = 300A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts

CE(sat)

VCE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 40 μA

GES

rating.

j(max)

2

2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM300DU-12F
Trench Gate Design Dual IGBTMOD™

300 Amperes/600 Volts

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Times Fall Time tf Inductive Load – – 250 ns

Diode Reverse Recovery Time** trr Switching Operation – – 150 ns

Diode Reverse Recovery Charge** Qrr IE = 300A – 5.2 – μC

– – 81 nf

ies

VCE = 10V, VGE = 0V – – 5.4 nf

oes

– – 3 nf

res

VCC = 300V, IC = 300A, – – 250 ns

d(on)

= V

GE1

RG = 2.1, – – 500 ns

d(off)

= 15V, – – 120 ns

GE2

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Tc Reference Point Under Chip

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Q Per IGBT 1/2 Module, Tc Reference – 0.16 °C/W

th(j-c)

D Per FWDi 1/2 Module, Tc Reference – – 0.24 °C/W

th(j-c)

'Q Per IGBT 1/2 Module, – 0.08 °C/W

th(j-c)

Per Module, Thermal Grease Applied – 0.020 – °C/W

th(c-f)

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE, V

GE

20

0 500

16

12

8

4

0

1000 1500

2500

VCC = 300V

2000

VCC = 200V

IC = 300A

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

0

10

2

10

2

10

1

10

0

10

-1

VGE = 0V

10

1

C

ies

C

oes

0 1.0 2.0 3.0 4.0

10

1

10

2

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat

)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

0 6 8 1

210 181614 20

4

3

2

1

0

Tj = 25°C

IC = 120A

IC = 600A

IC = 300A

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat)

, (VOLTS

)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

3

0 100 200 300 400

2

1

0

600500

VGE = 15V

Tj = 25°C
Tj = 125°C

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 1 2 3 4

0

Tj = 25

o

C

100

200

300

500

400

600

VGE = 20V

15

10

9.5

9

8.5

7.5

8

11

C

res

10

3

10

1

10

2

10

3

10

2

10

1

t

d(off)

t

d(on)

t

r

V

CC

= 300V
VGE = ±15V
RG = 2.1 Ω
Tj = 125°C
Inductive Load

t

f

10

3

10

1

10

2

10

3

10

2

10

1

t

rr

10

3

10

2

10

1

I

rr

Tj = 25°C

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Per Unit Base
R

th(j-c)

= 0.16°C/W (IGBT)

R

th(j-c)

= 0.24°C/W (FWDi)
Single Pulse
TC = 25°C

VCC = 300V
VGE = ±15V
RG = 2.1 Ω
Tj = 25°C
Inductive Load

CM300DU-12F
Trench Gate Design Dual IGBTMOD™

300 Amperes/600 Volts

4