C&H Technology CM200TU-5F User Manual

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Suite 108
Minnetonka, MN 55345

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Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

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Phone – 1-800-274-4284

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM200TU-5F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A
B

C

D

Measured

Point

5 - M5 NUTS

P

TC

GuP
EuP

GuP

EuP

EE

GvP

EvP

U

G

EE

F

GwP

EwP

v

u

H

J

GvP

EvP

V

G
EHHS

GuN
EuN

w

H

J

GvN
EvN

E

GwP
EwP

N

W

T

C

Measured
Point

GwN
EwN

0.110 - 0.5 Tab

P

Q

R 4 - Mounting
Holes

K

L

M

K

Trench Gate Design
Six IGBTMOD™

200 Amperes/ 250 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse­connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

GuN
EuN

N

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.21 107.0
B 3.54±0.01 90.0±0.25
C 4.02 102.0
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.91 23.0
G 0.47 12.0
H 0.85 21.7

J 0.91 23.0

GvN

EvN

GwN

EwN

Dimensions Inches Millimeters

K 0.15 3.75
L 0.67 17.0
M 1.91 48.5
N 0.03 0.8
P 0.32 8.1
Q 1.02 26.0
R 0.22 Dia. 5.5 Dia.
S 0.57 14.4

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM200TU-5F is a
250V (V

), 200 Ampere Six-

CES

IGBT IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 200 5

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200TU-5F
Trench Gate Design Six IGBTMOD™

200 Amperes/250 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200TU-5F Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 680 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

iso

-40 to 150 °C

-40 to 125 °C
250 Volts
±20 Volts
200 Amperes

400* Amperes

200 Amperes

400* Amperes

600 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

CES

IC = 20mA, VCE = 10V 3.0 4.0 5.0 Volts

IC = 200A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts

IC = 200A, VGE = 10V, Tj = 125°C – 1.1 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V

G

EC

VCC = 100V, IC = 200A, VGE = 10V – – nC

IE = 200A, VGE = 0V – – 2.0 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

ies

oes

res

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V – – 3.0 nf

VCC = 100V, IC = 200A, – – 700 ns

V

= V

GE1

= 10V, – – 1800 ns

GE2

RG = 13V, Resistive – – 700 ns

Load Switching Operation – – 500 ns
IE = 200A, diE/dt = -400A/µs––300ns
IE = 200A, diE/dt = -400A/µs– –µC

––66nf

– – 2.3 nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

2

2

Q Per IGBT 1/6 Module – – 0.21 °C/W

th(j-c)

R Per Free-Wheel Diode 1/6 Module – – 0.47 °C/W

th(j-c)

th(c-f)

Per 1/6 Module, Thermal Grease Applied – 0.09 – °C/W

rating.

j(max)

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200TU-5F
Trench Gate Design Six IGBTMOD™

200 Amperes/250 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

400

VGE = 15V

300

, (AMPERES)

C

8

6

10

5.75

Tj = 25

5.5

200

5.25

100

COLLECTOR CURRENT, I

0

012345

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 400A

IC = 200A

IC = 80A

0 5 10 15

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

5

4.75

4.5

TRANSFER CHARACTERISTICS

o

C

400

VCE = 10V

300

, (AMPERES)

C

= 25°C

T

j

T

= 125°C

j

(TYPICAL)

200

100

COLLECTOR CURRENT, I

0

0246810

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0.6 0.8 1.0 1.2 1.61.4 1.8

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

3

10

di/dt = -400A/µsec
T

= 25°C

, (ns)

j

rr

2

10

(TYPICAL)

(TYPICAL)

, (VOLTS)

EC

3

10

t

rr

2

10

SATURATION VOLTAGE CHARACTERISTICS

2.0

)

1.5

, (VOLTS

CE(sat)

1.0

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE, V

0

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

10

20

, (AMPERES)

15

, (VOLTS)

rr

GE

10

COLLECTOR-EMITTER

(TYPICAL)

VGE = 10V

Tj = 25°C

= 125°C

T

j

0 80 160 240 320

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

VGE = 0V
f = 1MHz

-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

CE

C

ies

C

oes

C

res

1

10

GE

IC = 200A

VCC = 50V

VCC = 100V

400

10

2

SWITCHING TIME, (ns)

COLLECTOR CURRENT, IC, (AMPERES)

REVERSE RECOVERY TIME, t

1

10

1

10

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

10

I

rr

2

10

3

10

5

GATE-EMITTER VOLTAGE, V

1

REVERSE RECOVERY CURRENT, I

0

0 0.5 1.0

GATE CHARGE, QG, (mC)

1.5 2.0

3

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200TU-5F
Trench Gate Design Six IGBTMOD™

200 Amperes/250 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.21°C/W

-4

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.47°C/W

-4

10

0

1

10

-1

10

-2

10

-3

10

-3

10

4

4