C&H Technology CM200HG-130H User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

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Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM200HG-130H

D

A

E

B

L (2 PLA

CES)

J

C

K (4 PLACES)

DETAIL “A”

DETAIL “A” DETAIL “B”

DETAIL “B”

H

F

G

M

V

X

Y

H

W

Q

S

R

T

V

U

N

P

Z

AA

CC

BB

BB

DD

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.51 140.0

B 2.87 73.0

C 1.89+0.04/-0.0 48.0+1.0/-0.0

D 4.88 124.0

E 2.24 57.0

F 0.85 21.6

G 0.51 12.9

H 0.20 5.0

J 1.73 44.0

K M6 Metric M6

L M8 Metric M8

M 0.64 16.2

N 1.59 40.4

P 1.10 28.0

Dimensions Inches Millimeters

Q 1.44 36.5

R 0.22 5.5

S 0.16 4.0

T 0.68 17.4

U 1.61 41.0

V 0.24 6.0

W 2.44 62.0

X 0.47 12.0

Y 0.14 3.5

Z 0.11 2.8

AA 0.06 1.6

BB 0.02 0.5

CC 0.05 Dia. 1.2 Dia.

DD 10° 10°

Single IGBTMOD™
HVIGBT Module

200 Amperes/6500 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V
£ Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM200HG-130H is a 6500V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 200 130

CE(sat)

), 200 Ampere Single

V

CES

18/05

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200HG-130H
Single IGBTMOD™ HVIGBT Module

200 Amperes/6500 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200HG-130H Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Operating Temperature T

Collector-Emitter Voltage (VGE = 0V, Tj = -40°C) V

Collector-Emitter Voltage (VGE = 0V, Tj = +25°C) V

Collector-Emitter Voltage (VGE = 0V, Tj = +125°C) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, Tc = 80°C) IC 200 Amperes

Peak Collector Current (Pulse) ICM 400* Amperes

Emitter Current** (Tc = 25°C) IE 200 Amperes

Emitter Surge Current** (Pulse) IEM 400* Amperes

Maximum Collector Dissipation (Tc = 25°C, IGBT Part, T

Partial Discharge (V1 = 6900 V

, V2 = 5100 V

rms

, 60 Hz (Acc. to IEC 1287)) Qpd 10 pC

rms

≤ 125°C) PC 2900 Watts

j(max)

Max. Mounting Torque M8 Main Terminal Screws – 133 in-lb

Max. Mounting Torque M6 Mounting Screws – 53 in-lb

Module Weight (Typical) – 0.52 kg

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V

Maximum Turn-Off Switching Current – 400 Amperes

(VCC ≤ 4500V, VGE = ±15V, R

≥ 72Ω, Tj = 125°C)

G(off)

Short Circuit Capability, Maximum Pulse Width – 10 µs

(VCC ≤ 4500V, VGE = ±15V, R

≥ 72Ω, Tj = 125°C)

G(off)

Maximum Reverse Recovery Instantaneous Power – 1200 kW
(VCC ≤ 4500V, die/dt ≤ 1000A/μs, Tj = 125°C)

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

oprmax

rating (125°C).

-40 to 125 °C

stg

-40 to 125 °C

opr

5800 Volts

CES

6300 Volts

CES

6500 Volts

CES

±20 Volts

GES

10200 Volts

iso

2 8/05

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200HG-130H
Single IGBTMOD™ HVIGBT Module

200 Amperes/6500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current* I

VCE = V

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

IC = 200A, VGE = 15V, Tj = 125°C – 5.0 – Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 3600V, IC = 200A, VGE = 15V – 3.3 – µC

Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V, Tj = 25°C – 4.0 – Volts

IE = 200A, VGE = 0V, Tj = 125°C – 3.6 – Volts

Turn-On Delay Time t

Turn-On Rise Time tr V

Turn-On Switching Energy Eon Tj = 125°C, t

Turn-Off Delay Time t

Turn-Off Fall Time 1 tf1 V

Turn-Off Fall Time 2 tf2 R

Turn-Off Switching Energy E

Reverse Recovery Time 1** t

Reverse Recovery Time 2** t

Reverse Recovery Charge** Qrr Tj = 125°C, – 370 – µC

Reverse Recovery Energy** E

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

VCE = V

CES

IC = 20mA, VCE = 10V 5.0 6.0 7.0 Volts

GE(th)

VGE = V

GES

IC = 200A, VGE = 15V, Tj = 25°C – 5.1 – Volts

CE(sat)

VCE = 10V, VGE = 0V, – 41.0 – nF

ies

f = 100kHz, – 2.5 – nF

oes

Tj = 25°C – 0.7 – nF

res

VCC = 3600V, IC = 200A, – 1.2 – µs

d(on)

GE1

VCC = 3600V, IC = 200A, – 6.6 – µs

d(off)

Tj = 125°C, t

off

VCC = 3600V, IE = 200A, – 1.0 – µs

rr1

die/dt = -670A/μs, – 2.4 – µs

rr2

t

rec

, VGE = 0V, Tj = 25°C – – 3.0 mA

CES

, VGE = 0V, Tj = 125°C – 10 30.0 mA

CES

, VCE = 0V – – 0.5 µA

GES

= -V

off

= 15V, R

GE2

= 60µs, Inductive Load – 1.5 – J/P

off

= -V

GE1

GE2

= 72Ω, – 3.3 – µs

G(off)

= 60µs, Inductive Load – 1.2 – J/P

off

= 30Ω, – 0.35 – µs

G(on)

= 15V, – 0.5 – µs

= 60µs, Inductive Load – 0.7 – J/P

Thermal Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance, Case to Fin R

Q Per IGBT – – 42.0 K/kW

th(j-c)

D Per FWDi – – 66.0 K/kW

th(j-c)

Per Module, Thermal Grease Applied – 18.0 – K/kW

th(c-f)

Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Comparative Tracking Index CTI – 600 – – –

Clearance – – 26.0 – – mm

Creepage Distance – – 56.0 – – mm

Internal Inductance L

Internal Lead Resistance R

– – 54.0 – µH

C-E(int)

– – – – mΩ

C-E(int)

38/05

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200HG-130H
Single IGBTMOD™ HVIGBT Module

200 Amperes/6500 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

2000

1600

, (AMPERES)

C

1200

Tj = 25°C

16V

18V

VGE = 20V

800

400

COLLECTOR CURRENT, I

0

0 2012 164 8

COLLECTOR-EMITTER VOLTAGE, V

FREE-WHEEL DIODE REVERSE RECOVERY

CHARGE CHARACTERISTICS (TYPICAL)

1.2

VCC = 3600V
VGE = ±15V

1.0

R

= 30Ω

0.8

G(on)

LS = 200nH
Tj = 125°C

, (mC)

rr

0.6

0.4

0.2

REVERSE RECOVERY CHARGE, Q

0

0 500300 400100 200

EMITTER CURRENT, IE, (AMPERES)

TRANSFER CHARACTERISTICS

(TYPICAL)

4000

VCE = 20V

3500

3000

, (AMPERES)

C

2500

Tj = 25°C
Tj = 125°C

2000

1500

1000

500

COLLECTOR CURRENT, I

0

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

1050 2015

CE(sat)

15V

14V

13V

12V

10V

, (VOLTS)

8

7

, (VOLTS)

6

CES

5

4

3

FREE-WHEEL DIODE FORWARD

CHARACTERISTICS (TYPICAL)

VGE = 0V

Tj = 25°C
Tj = 125°C

FREE-WHEEL DIODE REVERSE RECOVERY

ENERGY CHARACTERISTICS (TYPICAL)

1.2

VCC = 3600V
VGE = ±15V

1.0

R

, (J/PULSE)

rec

LS = 200nH

0.8

Tj = 125°C

0.6

0.4

2

1

COLLECTOR-EMITTER VOLTAGE, V

0

0 500300 400100 200 0 500300 400100 200

EMITTER CURRENT, IE, (AMPERES)

FREE-WHEEL DIODE REVERSE RECOVERY

ENERGY CHARACTERISTICS (TYPICAL)

1.2

VCC = 3600V
VGE = ±15V

1.0

IC = 200A

, (J/PULSE)

rec

LS = 200nH

0.8

Tj = 125°C

0.6

0.4

0.2

REVERSE RECOVERY ENERGY, E

0

0 1204020 60 10080

GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω)

TURN-OFF DELAY TIME VS.

COLLECTOR CURRENT

1

10

, (µs)

d(off)

0

10

SWITCHING TIME, t

-1

10

1

10

COLLECTOR CURRENT,

(TYPICAL)

2

10

VCC = 3600V
VGE = ±15V
R

= 72Ω

G(off)

R

= 30Ω

G(on)

LS = 200nH
Tj = 125°C

IC, (AMPERES)

3

10

0.2

REVERSE RECOVERY ENERGY, E

0

FREE-WHEEL DIODE REVERSE RECOVERY

CHARGE CHARACTERISTICS (TYPICAL)

1.2

VCC = 3600V
VGE = ±15V

1.0

IC = 200A

, (mC)

rr

LS = 200nH

0.8

Tj = 125°C

0.6

0.4

0.2

REVERSE RECOVERY CHARGE, Q

0

0 1204020 60 10080

1

10

, (µs)

d(on)

0

10

SWITCHING TIME, t

-1

10

1

10

= 30Ω

G(on)

EMITTER CURRENT, IE, (AMPERES)

TURN-ON DELAY TIME VS.

COLLECTOR CURRENT

(TYPICAL)

VCC = 3600V
VGE = ±15V
R

G(off)

R

G(on)

LS = 200nH
Tj = 125°C

2

COLLECTOR CURRENT,

10

IC, (AMPERES)

= 72Ω
= 30Ω

3

10

4 8/05

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200HG-130H
Single IGBTMOD™ HVIGBT Module

200 Amperes/6500 Volts

FALL TIME VS.

COLLECTOR CURRENT

1

10

, (µs)

f

0

10

SWITCHING TIME, t

-1

10

10

4.0

3.5

3.0

2.5

, (J/PULSE)

on

1

COLLECTOR CURRENT, IC, (AMPERES)

VCC = 3600V
VGE = ±15V
R

G(off)

R

G(on)

LS = 200nH
Tj = 125°C

(TYPICAL)

10

SWITCHING LOSS (ON) VS.

COLLECTOR CURRENT

(TYPICAL)

= 72Ω
= 30Ω

2.0

1.5

1.0

SWITCHING LOSS, E

0.5

0

COLLECTOR CURRENT, IC, (AMPERES)

CAPACITANCE VS.

COLLECTOR-EMITTER VOLTAGE

2

10

, (pF)

res

1

, C

10

oes

, C

ies

0

10

VGE = 15V

CAPACITANCE, C

f = 100kHz
Tj = 25°C

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

(TYPICAL)

0

10

2

10

VCC = 3600V
VGE = ±15V
R

= 72Ω

G(off)

R

= 30Ω

G(on)

LS = 200nH
Tj = 125°C

C

ies

C

oes

C

res

1

, (µs)

r

10

10

1

VCC = 3600V
VGE = ±15V
R
R
LS = 200nH
Tj = 125°C

0

RISE TIME VS.

COLLECTOR CURRENT

(TYPICAL)

= 72Ω

G(off)

= 30Ω

G(on)

4.0

3.5

3.0

2.5

, (J/PULSE)

off

2.0

SWITCHING LOSS (OFF) VS.

COLLECTOR CURRENT

(TYPICAL)

VCC = 3600V
VGE = ±15V
R

= 72Ω

G(off)

R

= 30Ω

G(on)

LS = 200nH
Tj = 125°C

1.5

SWITCHING TIME, t

-1

3

10

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS (OFF) VS.

GATE RESISTANCE

2

10

(TYPICAL)

3

10

4.0

VCC = 3600V

3.5

VGE = ±15V
IC = 200A

3.0

LS = 200nH
Tj = 125°C

2.5

, (J/PULSE)

off

2.0

1.5

1.0

SWITCHING LOSS, E

0.5

500300 4002001000

0

GATE RESISTANCE, RG, (Ω)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

12060 1008040200

8

VGE = 15V

7

, (VOLTS)

CES

Tj = 25°C
Tj = 125°C

6

5

4

3

2

1

COLLECTOR-EMITTER VOLTAGE, V

2

10

0

COLLECTOR CURRENT, IC, (AMPERES)

500300 4002001000

1.0

SWITCHING LOSS, E

0.5

0

0

4.0

3.5

3.0

2.5

, (J/PULSE)

on

2.0

1.5

1.0

SWITCHING LOSS, E

0.5

0

1.2

1.0

(j-c)

0.8

0.6

0.4

TRANSIENT IMPEDANCE, Rth

0.2

0

10

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS (ON) VS.

GATE RESISTANCE

(TYPICAL)

VCC = 3600V
VGE = ±15V
IC = 200A
LS = 200nH
Tj = 125°C

GATE RESISTANCE, RG, (Ω)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDI)

SINGLE PULSE
TC = 25°C
IGBT =

R

Q =

th(j-c)

42

°K/kW

R

°K/kW

D =

th(j-c)

-2

10

-1

10

TIME, (s)

FWDI =
66

-3

500300 400200100

12060 1008040200

0

10

1

10

58/05