C&H Technology CM200HA-24H User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM200HA-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

S

D

F

T

X - M4 THD.
(2 TYP.)

J

T

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.21 107.0
B 3.661±0.01 93.0±0.25
C 2.44 62.0
D 1.89±0.01 48.0±0.25
E 1.42 Max. 36.0 Max.
F 1.34 34.0
G 1.18 30.0
H 1.14 29.0

J 0.98 Max. 25.0 Max.
K 0.94 24.0
L 0.93 23.5

Q

M

E

G

A

P

NH

B

U

K

R

E

K

Dimensions Inches Millimeters

M 0.83 21.0
N 0.69 17.5
P 0.63 16.0
Q 0.51 13.0
R 0.43 11.0
S 0.35 9.0

T 0.28 7.0
U 0.12 3.0
V 0.26 Dia. Dia. 6.5
W M6 Metric M6
X M4 Metric M4

G

V - DIA.
(4 TYP.)

L

W - M6 THD.
(2 TYP.)

C

E

C

Single IGBTMOD™
H-Series Module

200 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e.
CM200HA-24H is a 1200V (V
200 Ampere Single IGBTMOD™
Power Module.

Type Current Rating V

CM 200 24

CE(sat)

(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking

CES

CES

Amperes Volts (x 50)

),

181

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200HA-24H
Single IGBTMOD™ H-Series Module

200 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200HA-24H Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Max. Mounting Torque M6 Terminal Screws – 26 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 400 Grams
V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

RMS

–40 to 150 °C
–40 to 125 °C

1200 Volts

±20 Volts
200 Amperes

400* Amperes

200 Amperes
400* Amperes
1500 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V ––1.0 mA

CES

, VCE = 0V ––0.5

GES

µ

IC = 20mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 200A, VGE = 15V – 2.5 3.4** Volts

A

IC = 200A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

FM

VCC = 600V, IC = 200A, VGS = 15V – 1000 – nC

IE = 200A, VGS = 0V ––3.4 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies

oes

res

rr

VGE = 0V, VCE = 10V, f = 1MHz –– 14 nF

r

f

VCC = 600V, IC = 200A, ––400 ns

V

= V

GE1

= 15V, RG = 1.6Ω ––300 ns

GE2

IE = 200A, diE/dt = –400A/µs ––250 ns

rr

IE = 200A, diE/dt = –400A/µs – 1.49 –

–– 40 nF

–– 8 nF
––250 ns

––350 ns

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied ––0.040 °C/W

Per IGBT ––0.085 °C/W

Per FWDi ––0.18 °C/W

182

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200HA-24H
Single IGBTMOD™ H-Series Module

200 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

400

Tj = 25oC
VGE = 20V

320

, (AMPERES)

C

240

160

80

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

15

7

COLLECTOR-EMITTER

(TYPICAL)

12

11

10

9

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 400A

IC = 200A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

(TYPICAL)

IC = 80A

t

f

t

d(off)

t

d(on)

t

r

VCC = 600V
V

= ±15V

GE

R

= 1.6 Ω

G

T

= 125°C

j

2

10

TRANSFER CHARACTERISTICS

(TYPICAL)

400

VCE = 10V

320

, (AMPERES)

C

240

Tj = 25°C

= 125°C

T

j

160

80

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

2

10

(TYPICAL)

(TYPICAL)

I

rr

t

rr

2

10

1

10

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 80 160 240 320

2

10

, (nF)

res

1

10

, C

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

VGE = 0V
f = 1MHz

-1

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

IC = 200A

0

10

GATE CHARGE, V

VCC = 400V

CE

1

10

GE

VCC = 600V

C

C

C

400

ies

oes

res

2

10

8

REVERSE RECOVERY TIME, t

di/dt = -400A/µsec

= 25°C

T

j

1

3

10

10

1

10

EMITTER CURRENT, IE, (AMPERES)

2

10

10

3

10

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

0

0

0 400 800

GATE CHARGE, QG, (nC)

1200 1600

183

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200HA-24H
Single IGBTMOD™ H-Series Module

200 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.085°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.18°C/W

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

184