C&H Technology CM200E3U-12H User Manual

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Suite 108
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1-800-274-4284

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CM200E3U-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

K KM

D

Q -

(2 PLACES)

U T

J

E2 G2

#110
TAB

E

H

F

R

S

L

N

B

G

C

P - NUTS

(3 PLACES)

.47 [12mm] DEEP

CM

C2E1 E2 C1

T

Chopper IGBTMOD™
U-Series Module

200 Amperes/ 600 Volts

Description:

Powerex Chopper IGBTMOD™
Modules are designed for use in
switching applications. Each module
consists of one IGBT Transistor
having a reverse-connected super­fast recovery free-wheel diode and
an anode-collector connected super­fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking base­plate, offering simplified system
assembly and thermal management.

C2E1

E2

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.16 4.0
G 0.51 13.0
H 0.02 0.5

J 0.53 13.5

K 0.91 23.0

G2
E2

C1

Dimensions Inches Millimeters

L 0.84 21.2
M 0.67 17.0
N 0.28 7.0

PM5 M5
Q0.26 Dia. 6.5 Dia.
R 0.02 4.0

S 0.30 7.5

T 0.63 16.0
U 0.98 25.0

Features:

□ Low Drive Power
□ Low V

CE(sat)

□ Discrete Super-Fast Recovery

Free-Wheel Diode

□ High Frequency Operation

(15-20kHz)

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ DC Motor Control
□ Boost Regulator

Ordering Information:

Example: Select the complete
module number you desire from the
table - i.e. CM200E3U-12H is a
600V (V

), 200 Ampere Chopper

CES

IGBTMOD™ Pow er Module.

Current Rating V

Type Amperes Volts (x 50)

CM 200 12

CES

119

119

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200E3U-12H
Chopper IGBTMOD™ U-Series Module

200 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200E3U-12H Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg

CES

GES

C

CM

E

EM

c

Mounting Torque, M5 Main Ter minal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts

200 Amperes

400* Amperes

200 Amperes

400* Amperes

650 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 20mA, VCE = 10V 4.5 6 7.5 Volts

IC = 200A, VGE = 15V, Tj = 25°C – 2.4 3.0 V olts

IC = 200A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
Emitter-Collector Voltage V

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

G
EC
FM

VCC = 300V, IC = 200A, VGE = 15V – 400 – nC

IE = 200A, VGE = 0V – – 2.6 Volts

IF = 200A, Clamp Diode Part – – 2.6 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies
oes
res

d(on)

r

d(off)

f

rr

rr

rr

rr

VCE = 10V, VGE = 0V – – 9.6 nf

VCC = 300V, IC = 200A, – – 150 ns

V

= V

GE1

GE2

RG = 3.1V, Resistive – – 300 ns

Load Switching Operation – – 300 ns
IE = 200A, diE/dt = -400A/µs – – 160 ns
IE = 200A, diE/dt = -400A/µs – 0.48 – µC

IF = 200A, Clamp Diode Part – – 160 ns

diF/dt = -400A/µs – 0.48 – µC

= 15V, – – 400 ns

– – 17.6 nf

– – 2.6 nf

120

120

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200E3U-12H
Chopper IGBTMOD™ U-Series Module

200 Amperes/600 Volts

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

Q Per IGBT – – 0.19 °C/W

th(j-c)

D Per FWDi – – 0.35 °C/W

th(j-c)

th(j-c)
th(c-f)

Clamp Diode Part – – 0.35 °C/W

Per Module, Thermal Grease Applied – 0.035 – °C/W

OUTPUT CHARACTERISTICS

(TYPICAL)

500

400

, (AMPERES)

C

300

200

100

COLLECTOR CURRENT, I

0

10

8

, (VOLTS)

CE(sat)

6

o

Tj = 25

C

15

VGE = 20V

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

Tj = 25°C

14

13

12

11

10

9
8

COLLECTOR-EMITTER

(TYPICAL)

IC = 400A

IC = 200A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

IC = 80A

TRANSFER CHARACTERISTICS

(TYPICAL)

400

VCE = 10V

= 25°C

T

j

T

= 125°C

300

, (AMPERES)

C

j

200

100

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

2

10

Tj = 25°C

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0.6 1.0 1.4 1.8 2.62.2 3.0

EMITTER-COLLECTOR VOLTAGE, V

(TYPICAL)

, (VOLTS)

EC

SATURATION VOLTAGE CHARACTERISTICS

5

)

4

, (VOLTS

CE(sat)

3

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C
T

= 125°C

j

(TYPICAL)

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 100 200 300 400

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

2

10

VGE = 0V
f = 1MHz

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

(TYPICAL)

0

10

1

10

500

CE

C

ies

C

oes

C

res

2

10

121

121

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200E3U-12H
Chopper IGBTMOD™ U-Series Module

200 Amperes/600 Volts

SWITCHING CHARACTERISTICS

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

th(j-c)

10

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

HALF-BRIDGE

(TYPICAL)

10

(IGBT)

-2

10

th(j-c)

t

t

t
t

VCC = 300V
V
R
T

2

-1

= 0.19°C/W

f

d(off)

d(on)
r

= ±15V

GE

= 3.1Ω

G

= 125°C

j

0

10

REVERSE RECOVERY CHARACTERISTICS

4

10

di/dt = -400A/µsec
T

= 25°C

j

, (ns)

rr

3

10

(TYPICAL)

2

10

I

rr

10

, (AMPERES)

rr

1

20

15

, (VOLTS)

GE

IC = 200A

GATE CHARGE, V

VCC = 200V

VCC = 300V

GE

10

2

10

t

rr

0

10

5

REVERSE RECOVERY TIME, t

1

th(j-c)

-1

10

-2

10

10

1

10

EMITTER CURRENT, IE, (AMPERES)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-2

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

10

(FWDi)

10

th(j-c)

2

-1

= 0.35°C/W

10

0

10

10

3

10

1

10

GATE-EMITTER VOLTAGE, V

-1

REVERSE RECOVERY CURRENT, I

10

3

1

10

10

0

0 100 200

-1

-2

300 600400 500

GATE CHARGE, QG, (nC)

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-4

10

-3

10

-3

10

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-3

-4

10

10

-3

10

122

122