C&H Technology CM200DY-34A User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM200DY-34A

A

XW

FF

B

N

L

(4 PLACES)

D

M NUTS
(3 PLACES)

G

G

H

KKK

PPP

T THICK
U WIDTH

QQ

V

C

S

R

G2

E2

E1

G1

C1E2C2E1

LABEL

C2E1 E2 C1

G2

E2

E1

G1

E

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Dual IGBTMOD™
A-Series Module

200 Amperes/1700 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0

B 2.44 62.0

C 1.18+0.04/-0.02 30.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 1.89±0.01 48.0±0.25

F 0.98 25.0

G 0.24 6.0

H 0.59 15.0

K 0.55 14.0

L 0.26 Dia. Dia. 6.5

M M6 Metric M6

Dimensions Inches Millimeters

N 1.18 30.0

P 0.71 18.0

Q 0.28 7.0

R 0.87 22.2

S 0.33 8.5

T 0.02 0.5

U 0.110 2.8

V 0.16 4.0

W 0.85 21.5

X 0.94 24.0

Applications:

£ AC Motor Control
£ UPS
£ Battery Powered Supplies

Ordering Information:

Example: Select the complete
part module number you
desire from the table below -i.e.
CM200DY-34A is a 1700V (V

CES

200 Ampere Dual IGBTMOD™
Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 200 34

V

CES

),

101/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM200DY-34A
Dual IGBTMOD™ A-Series Module

200 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Ratings Symbol CM200DY-34A Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (DC, TC = 109°C)*4 I

Peak Collector Current (Pulse Repetition)*2 I

Emitter Current (TC = 25°C) IE*1 200 Amperes

Peak Emitter Current (Pulse Repetition)*2 I

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)*2,*4 P

Mounting Torque, M5 Main Terminal — 30 in-lb

Mounting Torque, M6 Mounting — 40 in-lb

Weight — 400 Grams

Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V

–40 to 125 °C

stg

1700 Volts

CES

±20 Volts

GES

200 Amperes

C

400 Amperes

CM

*1 400 Amperes

EM

1980 Watts

C

3500 Volts

ISO

Static Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

I

V

CES

V

GES

I

GE(th)

IC = 200A, VGE = 15V, Tj = 25°C*3 — 2.2 2.8 Volts

CE(sat)

C

= V

CE

GE

= 20mA, VCE = 10V 5.5 7.0 8.5 Volts

C

, VGE = 0V — — 1.0 mA

CES

= V

, VCE = 0V — — 2.0 µA

GES

= 200A, VGE = 15V, Tj = 125°C*3 — 2.45 — Volts

Total Gate Charge QG VCC = 1000V, IC = 200A, VGE = 15V — 1330 — nC

Emitter-Collector Voltage VEC*1 I

= 200A, VGE = 0V*3 — — 3.0 Volts

E

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Time Fall Time tf Inductive Load — — 350 ns

Diode Reverse Recovery Time trr*1 Switching Operation, — — 450 ns

Diode Reverse Recovery Charge Qrr*1 I

*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.

— — 49.4 nf

ies

V

oes

— — 1.06 nf

res

— — 550 ns

d(on)

V

d(off)

GE1

= 10V, VGE = 0V — — 5.6 nf

CE

= 1000V, IC = 200A, — — 190 ns

CC

= V

= 15V, RG = 2.4Ω, — — 750 ns

GE2

= 200A — 20 — µC

E

rating.

j(max)

2 01/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

2

10

1

10

0

10

-1

10

1

01 324

10

1

10

2

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

8

6

4

2

0

Tj = 25°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

400

300

200

100

0

VGE = 10V

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 400A

IC = 200A

IC = 80A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0246810

048121620

048121620

100

0

VGE =

20V

10

11

12

15

13

9

8

Tj = 25

o

C

200

300

400

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-CURRENT, I

C

, (AMPERES)

TRANSFER CHARACTERISTICS

(TYPICAL)

5

4

3

0

100

2

1

0

400300

VCE = 15V

Tj = 25°C
T

j

= 125°C

200

10

-1

Tj = 25°C
T

j

= 125°C

CM200DY-34A
Dual IGBTMOD™ A-Series Module

200 Amperes/1700 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

External Gate Resistance RG 2.4 — 24 Ω

*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

Q Per IGBT*4 — — 0.063 °C/W

th(j-c)

D Per FWDi*4 — — 0.11 °C/W

th(j-c)

Thermal Grease Applied*4,*5 — — — °C/W

th(c-f)

301/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25°C
Per Unit Base =
R

th(j-c)

=

0.063°C/W
(IGBT)
R

th(j-c)

=

0.11°C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

20

0

16

12

8

4

0

500 1000 20001500

VCC = 1000V

EMITTER CURRENT, IC, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

2

10

1

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

VCC = 1000V
V

GE

= 15V

R

G

= 2.4Ω

T

j

= 25°C

Inductive Load

VCC = 800V

IC = 200A

10

3

COLLECTOR CURRENT, I

C

, (AMPERES)

SWITCHING LOSS, E

on

, E

off

, E

rr

, (mJ/PULSE)

10

3

10

1

10

2

10

1

10

2

10

0

VCC = 1000V
V

GE

= 15V

R

G

= 2.4Ω

T

j

= 125°C

Inductive Load

VCC = 1000V
V

GE

= 15V

I

C

= 200A

T

j

= 125°C

Inductive Load

10

3

SWITCHING LOSS VS.

COLLECTOR CURRENT (TYPICAL)

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

on

, E

off

, E

rr

, (mJ/PULSE)

10

3

10

0

10

1

10

2

10

1

10

2

SWITCHING LOSS VS.

GATE RESISTANCE (TYPICAL)

I

rr

t

rr

COLLECTOR CURRENT, I

C

, (AMPERES)

10

3

10

1

10

2

10

2

10

1

SWITCHING TIME, t

d(on)

, t

r

, t

d(off)

, t

f

, (ns)

SWITCHING TIME VS.

COLLECTOR CURRENT (TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 1000V
V

GE

= 15V

R

G

= 2.4Ω

T

j

= 125°C

Inductive Load

t

f

10

3

GATE RESISTANCE, R

G

, (Ω)

10

3

10

0

10

1

10

2

10

1

10

0

SWITCHING TIME, t

d(on)

, t

r

, t

d(off)

, t

f

, (ns)

SWITCHING TIME VS.

GATE RESISTANCE (TYPICAL)

t

d(off)

t

d(on)

E

on

E

off

E

on

E

off

E

rr

t

r

VCC = 1000V
V

GE

= 15V

I

C

= 200A

T

j

= 125°C

Inductive Load

t

f

10

2

E

rr

CM200DY-34A
Dual IGBTMOD™ A-Series Module

200 Amperes/1700 Volts

4 01/10 Rev. 1