C&H Technology CM200DY-12H User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM200DY-12H

B

C

F

D

Q

A

S

S

G

K

L

M

E1

C1

E2

G1

E2

G2

C2E1

E

E

H

H

P - DIA. (2 TYP.)

R - M5 THD (3 TYP.)

N

C2E1

J

N

J J

C1E2

G1 E1 E2 G2

.110 TAB

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Dual IGBTMOD™
H-Series Module

200 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel diode. All components

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0

B 3.150±0.01 80.0±0.25

C 1.89 48.0

D 1.18 Max. 30.0 Max.

E 0.90 23.0

F 0.83 21.2

G 0.71 18.0

H 0.67 17.0

J 0.63 16.0

Dimensions Inches Millimeters

K 0.51 13.0

L 0.47 12.0

M 0.30 7.5

N 0.28 7.0

P 0.256 Dia. Dia. 6.5

Q 0.31 8.0

R M5 Metric M5

S 0.16 4.0

and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

(70ns) Free-Wheel Diode

£ High Frequency Operation

(20-25kHz)

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM200DY-12H
is a 600V (V

), 200 Ampere

CES

Dual IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 200 12

V

CES

105/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM200DY-12H
Dual IGBTMOD™ H-Series Module

200 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM200DY-12H Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage V

Collector Current IC 200 Amperes

Peak Collector Current ICM 400* Amperes

Diode Forward Current IF 200 Amperes

Diode Forward Surge Current IFM 400* Amperes

Power Dissipation Pd 780 Watts

Mounting Torque, M5 Terminal Screws — 17 in-lb

Mounting Torque, M6 Mounting Screws — 26 in-lb

Module Weight (Typical) — 270 Grams

V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

–40 to 125 °C

stg

600 Volts

CES

±20 Volts

GES

2500 Volts

RMS

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

I

Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V — 600 — nC

Diode Forward Voltage VFM IE = 200A, VGE = 0V — — 2.8 Volts

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

V

CES

V

GES

I

GE(th)

I

CE(sat)

= 200A, VGE = 15V, Tj = 150°C — 2.15 — Volts

C

= V

CE

GE

= 20mA, VCE = 10V 4.5 6.0 7.5 Volts

C

= 200A, VGE = 15V — 2.1 2.8** Volts

C

, VGE = 0V — — 1.0 mA

CES

= V

, VCE = 0V — — 0.5 µA

GES

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Time Fall Time tf — — 300 ns

Diode Reverse Recovery Time trr I

Diode Reverse Recovery Charge Qrr I

— — 20 nF

ies

V

oes

— — 4 nF

res

— — 200 ns

d(on)

V

d(off)

GE1

= 0V, VCE = 10V — — 7 nF

GE

= 300V, IC = 200A, — — 550 ns

CC

= V

= 15V, RG = 3.1Ω — — 300 ns

GE2

= 200A, diE/dt = -400/µs — — 110 ns

E

= 200A, diE/dt = -400/µs — 0.54 — µC

E

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

2 05/10 Rev. 1

Per IGBT — — 0.16 °C/W

th(j-c)

Per FWDi — — 0.35 °C/W

th(j-c)

Per Module, Thermal Grease Applied — — 0.065 °C/W

th(c-f)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

02468 10

300

100

0

VGE = 20V

15

12

11

8

7

Tj = 25°C

200

400

10

9

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

TRANSFER CHARACTERISTICS

(TYPICAL)

048 12 16 20

400

300

200

100

0

VCE = 10V

Tj = 25°C
T

j

= 125°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

0 100 200 300 400

4

3

2

1

0

VGE = 15V

Tj = 25°C
T

j

= 125°C

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

048 12 16 20

8

6

4

2

0

Tj = 25°C

IC = 80A

IC = 400A

IC = 200A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

0

10

2

10

2

10

1

10

0

10

-1

VGE = 0V

10

1

C

ies

C

oes

C

res

0 0.8 1.6 2.4 3.2 4.0

10

1

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

3

10

2

10

1

t

rr

I

rr

di/dt = -400A/µsec
T

j

= 25°C

10

2

10

1

10

0

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE, V

GE

20

0 200 400 600 800 1000

16

12

8

4

0

VCC = 200V

VCC = 300V

COLLECTOR CURRENT, IC, (AMPERES)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

3

10

2

10

1

t

d(off)

t

d(on)

t

r

VCC = 300V
V

GE

= ±15V

R

G

= 3.1Ω

T

j

= 125°C

t

f

SWITCHING TIME, (ns)

Tj = 25°C

CM200DY-12H
Dual IGBTMOD™ H-Series Module

200 Amperes/600 Volts

305/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

Single Pulse
T

C

= 25°C

Per Unit Base = R

th(j-c)

= 0.16°C/W

Z

th

= R

th

• (NORMALIZED VALUE)

10

-1

10

-2

10

-3

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(FWDi)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

Single Pulse
T

C

= 25°C

Per Unit Base = R

th(j-c)

= 0.35°C/W

Z

th

= R

th

• (NORMALIZED VALUE)

10

-1

10

-2

10

-3

CM200DY-12H
Dual IGBTMOD™ H-Series Module

200 Amperes/600 Volts

4 05/10 Rev. 1