C&H Technology CM200DX-24S User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM200DX-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

AQ

DETAIL "A"

B

AG

AR

AS

AD

AE

AJ

AH

A

D

E

FJ J

G

H

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

Q

S

T

U

R

S

T

U

Q

W

V

AK

AW

AX

DETAIL "B"

47

48

12345678910111213141516171819202122

X

AT
AU

KK

L

M

AV

G2(38)

E2(39)

K

N

DETAIL "A"

E1C2(24) E1C2(23)

Tr 2

Di2

E2

(47)C1(48)

Di1

DETAIL "B"

Tr 1

Th

NTC

TH1

(1)

P

C1(22)
E1(16)

G1(15)

TH2

(2)

24

23

L

AC (4 PLACES)

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

AP

AN

Y
(4 PLACES)

ZAAAB

AL

AM

C

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0
B 2.44 62.0
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 5.39 137.0
E 4.79 121.7
F 4.33±0.02 110.0±0.5
G 3.89 99.0
H 3.72 94.5
J 0.53 13.5
K 0.15 3.81
L 0.28 7.25
M 0.30 7.75
N 1.95 49.53
P 0.9 22.86
Q 0.55 14.0
R 0.87 22.0
S 0.67 17.0
T 0.48 12.0
U 0.24 6.0
V 0.16 4.2
W 0.37 6.5
X 0.83 21.14
Y M6 M6

Dimensions Inches Millimeters

Z 1.53 39.0
AA 1.97±0.02 50.0±0.5
AB 2.26 57.5
AC 0.22 Dia. 5.5 Dia.
AD 0.67+0.04/-0.02 17.0+1.0/-0.5
AE 0.51 13.0
AF 0.27 7.0
AG 0.03 0.8
AH 0.81 20.5
AJ 0.12 3.0
AK 0.14 3.5
AL 0.26 6.5
AM 0.53 13.5
AN 0.15 3.81
AP 0.05 1.15
AQ 0.025 0.65
AR 0.29 7.4
AS 0.05 1.2
AT 0.17 Dia. 4.3 Dia.
AU 0.102 Dia. 2.6 Dia.
AV 0.088 Dia. 2.25 Dia.
AW 0.12 3.0
AX 0.49 12.5

Dual IGBTMOD™
NX-S Series Module

200 Amperes/1200 Volts

AF

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM200DX-24S is a 1200V (V
200 Ampere Dual IGBTMOD™
Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 200 24

CE(sat)

Free-Wheel Diode

Heat Sinking

),

CES

V

CES

106/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM200DX-24S
Dual IGBTMOD™ NX-S Series Module

200 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

1200 Volts

CES

±20 Volts

GES

Collector Current (DC, TC = 119°C)*2 IC 200 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

Emitter Current (TC = 25°C)

*2,*4

P

*2,*4

I

Emitter Current (Pulse, Repetitive)*3 I

400 Amperes

CRM

1500 Watts

tot

*1

200 Amperes

E

*1

400 Amperes

ERM

Module

Characteristics Symbol Rating Units

Maximum Junction Temperature T

Maximum Case Temperature*2 T

Operating Junction Temperature T

Storage Temperature T

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T

j(max)

j(max)

) rating.

rating.

0 0

29.1

38.1

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

2500 Volts

ISO

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

47

Di2

Tr 2

Th

48

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

0

27.9

41.4

37.4

Di1

Tr 1

24

23

LABEL SIDE

78.4

28.2

41.7

2 06/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM200DX-24S
Dual IGBTMOD™ NX-S Series Module

200 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 200A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts

IC = 200A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 200A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts

IC = 200A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V — 466 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 200A, VGE = ±15V, — — 200 ns

Turn-off Delay Time t

Fall Time tf — — 300 ns

Emitter-Collector Voltage V

(Terminal) IE = 200A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts

IE = 200A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts

Emitter-Collector Voltage V

(Chip) IE = 200A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts

IE = 200A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 200A, — 30.7 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 9.8 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 20mA, VCE = 10V 5.4 6 6.6 Volts

GE(th)

IC = 200A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts

CE(sat)

IC = 200A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts

CE(sat)

— — 20 nF

ies

VCE = 10V, VGE = 0V — — 4.0 nF

oes

— — 0.33 nF

res

— — 800 ns

d(on)

RG = 0Ω, Inductive Load — — 600 ns

d(off)

*1

IE = 200A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts

EC

*1

IE = 200A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts

EC

*1

VCC = 600V, IE = 200A, VGE = ±15V — — 300 ns

rr

*1

RG = 0Ω, Inductive Load — 10.7 — µC

rr

VGE = ±15V, RG = 0Ω, — 21.5 — mJ

off

*1

Tj = 150°C, Inductive Load — 14.2 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 1.1 mΩ

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

*2

0 0

29.1

38.1

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

47

Di2

Tr 2

Th

48

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

0

27.9

41.4

37.4

Di1

24

Tr 1

23

LABEL SIDE

78.4

28.2

41.7

306/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM200DX-24S
Dual IGBTMOD™ NX-S Series Module

200 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)

NTC Thermistor Part

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R25 TC = 25°C*2 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

Approximate by Equation*6 — 3375 — K

(25/50)

= 493Ω -7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C*2 — — 10 mW

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*2 R

Thermal Resistance, Junction to Case*2 R

Contact Thermal Resistance, R

Case to Heatsink*2 (Per 1 Module)

Q Per Inver ter IGBT — — 0.10 K/W

th(j-c)

D Per Inverter FWDi — — 0.19 K/W

th(j-c)

Thermal Grease Applied — 0.015 — K/W

th(c-f)

*7

Mechanical Characteristics

Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb

Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb

Creepage Distance ds Terminal to Terminal 11.55 — — mm

Terminal to Baseplate 12.32 — — mm

Clearance da Terminal to Terminal 10.00 — — mm

Terminal to Baseplate 10.85 — — mm

Weight m — 350 — Grams

Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm

Recommended Operating Conditons, Ta = 25°C

(DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts

Gate (-Emitter Drive) Voltage V

External Gate Resistance RG Per Switch 0 — 22 Ω

*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

*6 B

(25/50)

R

R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

4 06/11 Rev. 2

= In(

R

25

)/( 1 –

50 T25 T50

MOUNTING SIDE

1

)

MOUNTING SIDE

+ : CONVEX

– : CONCAVE

X

Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts

GE(on)

Y

MOUNTING

SIDE

– : CONCAVE

+ : CONVEX

0 0

29.1

38.1

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

47

Di2

Tr 2

Th

48

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

0

27.9

41.4

37.4

Di1

Tr 1

24

23

78.4

28.2

41.7

LABEL SIDE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM200DX-24S
Dual IGBTMOD™ NX-S Series Module

200 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(CHIP - TYPICAL)

400

350

300

250

, (AMPERES)

C

200

Tj =
25°

C

15

VGE = 20V

13.5

150

100

50

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0.5

EMITTER-COLLECTOR VOLTAGE, V

3

10

t

d(off)

t

d(on)

2

10

(CHIP - TYPICAL)

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

1.0

HALF-BRIDGE

SWITCHING CHARACTERISTICS

t

f

(TYPICAL)

12

11

10

9

, (VOLTS)

EC

2.51.5 2.0

SATURATION VOLTAGE CHARACTERISTICS

3.5

3.0

, (VOLTS)

2.5

CE(sat)

2.0

COLLECTOR-EMITTER

(CHIP - TYPICAL)

VGE = 15V

T

= 25°C

j

= 125°C

T

j

= 150°C

T

j

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

2

10

VGE = 0V

, (nF)

1

10

res

, C

oes

, C

ies

0

10

-1

10

CAPACITANCE, C

-2

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

3

10

2

10

(TYPICAL)

0

10

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

COLLECTOR-EMITTER

(CHIP - TYPICAL)

Tj = 25°C

IC = 400A

IC = 200A

IC = 80A

2

SATURATION VOLTAGE, V

0

400300 350100 20050 150 250

CE

C

ies

C

oes

C

res

1

10

t

d(on)

t

d(off)

2

10

t

r

t

f

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, V

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

t

d(off)

t

f

t

d(on)

2

10

SWITCHING TIME, (ns)

1

10

1

10

3

10

2

10

t

r

COLLECTOR CURRENT, I

(TYPICAL)

2

10

SWITCHING TIME VS.

GATE RESISTANCE

(YPICAL)

, (VOLTS)

GE

VCC = 600V
V

= ±15V

GE

R

= 0Ω

G

T

= 125°C

j

Inductive Load

, (AMPERES)

C

t

d(on)

t

d(off)

t

r

t

f

3

10

SWITCHING TIME, (ns)

1

10

1

10

t

r

COLLECTOR CURRENT, I

10

2

, (AMPERES)

C

VCC = 600V
V

= ±15V

GE

R

= 0Ω

G

T

= 150°C

j

Inductive Load

SWITCHING TIME, (ns)

1

10

3

10

-1

10

0

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

VCC = 600V
V

= ±15V

GE

I

= 200A

C

T

= 125°C

j

Inductive Load

1

10

SWITCHING TIME, (ns)

1

10

2

10

-1

10

0

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

VCC = 600V
V

= ±15V

GE

I

= 200A

C

T

= 150°C

j

Inductive Load

1

10

2

10

506/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM200DX-24S
Dual IGBTMOD™ NX-S Series Module

200 Amperes/1200 Volts

REVERSE RECOVERY CHARACTERISTICS

3

10

(ns)

rr

(A), t

rr

2

10

REVERSE RECOVERY, I

1

10

1

10

2

10

V

CC

V

GE

R

, (mJ)

, (mJ)

off

, E

on

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

= 0Ω

G

rr

T

= 125°C

j

1

10

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

2

10

(TYPICAL)

2

EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

= 600V
= ±15V

EMITTER CURRENT, I

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

10

2

10

VCC = 600V
V

= ±15V

GE

R

= 0Ω

G

T

= 125°C

j

Inductive Load

, (AMPERES)

E

REVERSE RECOVERY CHARACTERISTICS

3

10

(ns)

rr

(A), t

rr

2

10

3

10

3

10

REVERSE RECOVERY, I

1

10

1

10

2

10

VCC = 600V
V

GE

R

, (mJ)

rr

, (mJ)

off

, E

on

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

= 0Ω

G

T

= 150°C

j

1

10

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

I

rr

t

rr

E

on

E

off

E

rr

IMPEDANCE CHARACTERISTICS

10-310

0

th(j-c')

10

(TYPICAL)

VCC = 600V
V

= ±15V

GE

R

= 0Ω

G

T

= 150°C

j

Inductive Load

I

rr

t

rr

2

EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

10

= ±15V

2

10

EMITTER CURRENT, I

TRANSIENT THERMAL

(MAXIMUM)

-2

10

, (AMPERES)

E

-1

0

10

20

15

, (VOLTS)

GE

10

5

GATE-EMITTER VOLTAGE, V

3

10

E

on

E

off

E

rr

3

10

1

10

0

2

10

, (mJ)

rr

, (mJ)

off

, E

on

1

10

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

0

10

10

GATE CHARGE VS. V

IC = 150A
V

= 600V

CC

100 200 300 500400

0

GATE CHARGE, QG, (nC)

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

V

= 600V

CC

V

= ±15V

GE

I

= 150A

C/IE

T

= 125°C

j

-1

0

10

GATE RESISTANCE, RG, (Ω)

GE

E

on

E

off

E

rr

1

10

2

10

, (mJ)

rr

, (mJ)

off

, E

on

1

10

VCC = 600V
V

= ±15V

SWITCHING ENERGY, E

GE

I

= 150A

C/IE

REVERSE RECIVERY ENERGY, E

T

= 125°C

j

0

10

-1

10

10

GATE RESISTANCE, RG, (Ω)

-1

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

th(j-c)

• (NORMALIZED VALUE)

0.13°C/W

-2

10

th

(IGBT)

= R

E

on

E

off

E

rr

0

1

10

2

10

th

R

=

th(j-c)

Z

0.23°C/W
(FWDi)

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-4

10

-1

10

-2

10

-3

10

-3

10

6 06/11 Rev. 2