C&H Technology CM200DU-34KA User Manual

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Suite 108
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CM200DU-34KA

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

TC Measured

Point

E

B

R

CM

S - NUTS
(3 TYP)

C

C2E1

Outline Drawing and Circuit Diagram

C2E1

E2

D

C

LABEL

T - (4 TYP.)

H

G2
E2

L

E2

C1

2525

QQ

P

N

KKK

G2
E2

C1

E1
G1

J

E1
G1

X

H

V - THICK x W - WIDE
TAB (4 PLACES)

M

F

F

G

Dual IGBTMOD™
KA-Series Module

200 Amperes/ 1700 Volts

Description:

Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system
assembly and thermal

management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Dimensions Inches Millimeters

A 4.33 110.0
B 3.15 80.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.83 21.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0

Dimensions Inches Millimeters

M 0.33 8.5
N 0.10 2.5
P 0.85 21.6
Q 0.98 25.0
R 0.86 21.75
SM6 M6

T 0.26 Dia. 6.5 Dia.
V 0.02 0.5
W 0.110 2.79
X 1.08 27.35

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM200DU-34KA is
a 1700V (V

), 200 Ampere

CES

Dual IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 200 34

CES

1

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DU-34KA
Dual IGBTMOD™ KA-Series Module

200 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200DU-34KA Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M6 Main Ter minal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1700 Volts

±20 Volts
200 Amperes

400* Amperes

200 Amperes
400* Amperes
1100 Watts

3500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 20mA, VCE = 10V 4.0 5.5 7.0 Volts

IC = 200A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts

IC = 200A, VGE = 15V, Tj = 125°C– 3.8 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V

G

EC

VCC = 1000V, IC = 200A, VGE = 15V – 900 – nC

IE = 200A, VGE = 0V, Tj = 25°C– –4.6 Volts

IE = 200A, VGE = 0V, Tj = 125°C– 2.2 – Volts

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies
oes
res

d(on)

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V – – 4.8 nf

VCC = 1000V, IC = 200A, – – 600 ns

V

= V

GE1

GE2

RG = 1.6⍀,––700 ns

Inductive Load – – 800 ns

Switching Operation – – 600 ns

IE = 200A – 9.6 – µC

= 15V, – – 200 ns

––29.0 nf

––1.5 nf

2

2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0246810

200

0

15

14

12

11

8

Tj = 25oC

100

300

400

10

9

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

TRANSFER CHARACTERISTICS

(TYPICAL)

051015 20

200

100

0

400

300

VCE = 10V

Tj = 25°C
T

j

= 125°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

6

5

0 100 200

4

3

2

1

0

VGE = 15V

Tj = 25°C
T

j

= 125°C

300 400

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

048121620

8

6

4

2

0

Tj = 25°C

IC = 80A

IC = 400A

IC = 200A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

0

10

2

10

1

10

0

10

2

10

-1

VGE = 0V
f = 1MHz

10

1

C

ies

C

oes

C

res

VGE = 20V

12345

10

0

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

1

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

Tj = 25°C

CM200DU-34KA
Dual IGBTMOD™ KA-Series Module

200 Amperes/1700 Volts

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
Thermal Resistance R

* If you use this value, R

should be measured just under the chips.

th(f-a)

QPer IGBT 1/2 Module – – 0.11 °C/W

th(j-c)

RPer FWDi 1/2 Module – – 0.18 °C/W

th(j-c)

th(c-f)

th(j-c')

Per Module, Thermal Grease Applied – 0.020 – °C/W

QT

Measured Point – – 0.05* °C/W

c

(Under Chips - IGBT Part)

3

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DU-34KA
Dual IGBTMOD™ KA-Series Module

200 Amperes/1700 Volts

SWITCHING CHARACTERISTICS

4

10

t

f

t

d(off)

3

10

t

d(on)

2

10

SWITCHING TIME, (ns)

t

r

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

HALF-BRIDGE

(TYPICAL)

VCC = 1000V
V
R
T
Inductive Load

2

10

TRANSIENT THERMAL

(IGBT)

-2

10

10

th(j-c)

-1

= 0.11°C/W

= ±15V

GE

= 1.6 Ω

G

= 125°C

j

0

10

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

2

10

REVERSE RECOVERY TIME, t

1

3

10

10

1

10

IMPEDANCE CHARACTERISTICS

1

10

-1

10

-2

10

-3

10

1

th(j-c)

10

Single Pulse
T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

(TYPICAL)

t

rr

I

rr

VCC = 1000V
V

= ±15V

GE

R

= 1.6 Ω

G

T

= 25°C

j

Inductive Load

2

EMITTER CURRENT, IE, (AMPERES)

10

TRANSIENT THERMAL

(FWDi)

10

= 25°C

-2

10

th(j-c)

-1

10

= 0.18°C/W

2

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

10

8

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

10

3

10

0

1

10

10

10

0

0 400

-1

-2

GATE CHARGE, V

IC = 200A

GATE CHARGE, QG, (nC)

VCC = 800V

800

GE

VCC = 1000V

1200

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-4

10

-3

10

-3

10

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-4

10

-3

10

-3

10

4

4