C&H Technology CM200DU-24F User Manual

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CM200DU-24F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

TC MEASURING

EB

CM

S - NUTS (3 TYP)

C

C2E1

POINT

C2E1

K

RTC

PQ

RTC

T (4 TYP.)

G2

E2

U

E1

G1

V

N

R

M

H

J

H

L

G2
E2

C1

E1
G1

F

G

A
D

C

L

E2

E2

C1

Q

KK

Trench Gate Design
Dual IGBTMOD™

200 Amperes/ 1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recover y free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0

Dimensions Inches Millimeters

L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
SM6 M6

T0.26 Dia. 6.5 Dia.
U 0.02 0.5
V 0.62 15.85

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM200DU-24F is a
1200V (V

), 200 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 200 24

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DU-24F
Trench Gate Design Dual IGBTMOD™

200 Amperes/1200 Volts

Absolute Maximum Ratings, T

= 25 °C unless otherwise specified

j

Ratings Symbol CM200DU-24F Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
200 Amperes

400* Amperes

200 Amperes

400* Amperes

890 Watts
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) V

iso

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES

GE(th)

CE(sat)

G

EC

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 40 µA

GES

IC = 20mA, VCE = 10V 5 6 7 Volts

IC = 200A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts

IC = 200A, VGE = 15V, Tj = 125°C– 1.9 – Volts

VCC = 600V, IC = 200A, VGE = 15V – 2200 – nC

IE = 200A, VGE = 0V – – 3.2 Volts

rating.

j(max)

2

2

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DU-24F
Trench Gate Design Dual IGBTMOD™

200 Amperes/1200 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 3.4 nf

VCC = 600V, IC = 200A, – – 300 ns

V

= V

GE1

= 15V, – – 80 ns

GE2

RG = 1.6⍀,––500 ns

Inductive Load – – 300 ns

Switching Operation – – 200 ns

IE = 200A – 12.2 – µC

––78nf

––2nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

QPer IGBT 1/2 Module, Tc Reference – 0.15 °C/W

th(j-c)

Point per Outline Drawing

DPer FWDi 1/2 Module, Tc Reference – – 0.18 °C/W

th(j-c)

Point per Outline Drawing

'Q Per IGBT 1/2 Module, – 0.08 °C/W

th(j-c)

Tc Reference Point Under Chip

th(c-f)

Per Module, Thermal Grease Applied – 0.020 – °C/W

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DU-24F
Trench Gate Design Dual IGBTMOD™

200 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

400

Tj = 25

o

11

10

C

15

9.5

VGE = 20V

300

, (AMPERES)

C

200

100

COLLECTOR CURRENT, I

0

01 234

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

(TYPICAL)

9

8.5

8

Tj = 25°C

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 1.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

3

10

VCC = 600V
V

GE

R

= 1.6 Ω

rr

10

10

G

T

= 25°C

j

Inductive Load

2

1

1

10

, (ns)

REVERSE RECOVERY TIME, t

(TYPICAL)

= ±15V

EMITTER CURRENT, IE, (AMPERES)

2.0

10

2

3.0 4.0

, (VOLTS)

EC

I

rr

t

rr

SATURATION VOLTAGE CHARACTERISTICS

3

)

, (VOLTS

2

CE(sat)

1

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

0

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

10

3

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

2

10

8

4

GATE-EMITTER VOLTAGE, V

1

REVERSE RECOVERY CURRENT, I

10

3

10

0

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

0 100 200 300

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

CE

C

C
C

VGE = 0V

-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

1

10

GE

IC = 200A

VCC = 400V

VCC = 600V

0

GATE CHARGE, QG, (nC)

ies

oes

res

30002500200015001000500

400

10

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

2

COLLECTOR-EMITTER

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 200A

IC = 80A

1

SATURATION VOLTAGE, V

0

068101214161820

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

t

d(off)

t

f

2

10

1

10

SWITCHING TIME, (ns)

0

10

2

1

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

10-310

1

th(j-c)

10

Per Unit Base
R

th(j-c)

R

th(j-c)

0

10

Single Pulse
T

= 25°C

C

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(TYPICAL)

TRANSIENT THERMAL

(IGBT & FWDi)

-2

= 0.15°C/W (IGBT)
= 0.18°C/W (FWDi)

TIME, (s)

IC = 400A

2

10

-1

10

-5

10

t

d(on)

t

r

VCC = 600V
V

= ±15V

GE

R

= 1.6 Ω

G

T

= 125°C

j

Inductive Load

0

10

-4

10

3

10

1

10

-1

10

-2

10

-3

10

-3

10

4