C&H Technology CM200DU-12NFH User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

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Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM200DU-12NFH

R

C2E1

E2

C1

E1
G1

E2

G2

G2E2

C2E1 E2 C1

E1G1

TC MEASUREMENT POINT

S

T

Z

E

G

F

F

B

A

D

KKM

N

Y J

W

V X V

C

W W W

P - NUTS (3 TYP)

Q - (2 TYP)

H

LABEL

L

U

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0

B 1.89 48.0

C 1.18+0.04/-0.01 30.0+1.0/-0.5

D 3.15±0.01 80.0±0.25

E 0.43 11.0

F 0.16 4.0

G 0.71 18.0

H 0.51 13.0

J 0.53 13.5

K 0.91 23.0

L 0.83 21.2

M 0.67 17.0

Dimensions Inches Millimeters

N 0.28 7.0

P M5 Metric M5

Q 0.26 Dia. Dia. 6.5

R 0.02 4.0

S 0.94 24.0

T 0.3 7.5

U 0.33 8.5

V 0.63 16.0

W 0.1 2.5

X 0.98 25.0

Y 0.47 12.0

Z 0.11 2.8

Dual IGBTMOD™
NFH-Series Module

200 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules are
designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low V
£ Low E
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£Power Supplies
£ Induction Heating
£ Welders

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM200DU-12NFH is a 600V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 200 12

CE(sat)

SW(off)

Free-Wheel Diode

Heat Sinking

), 200 Ampere Dual

V

CES

1Rev. 11/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM200DU-12NFH
Dual IGBTMOD™ NFH-Series Module

200 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM200DU-12NF Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (TC = 25°C) IC 200* Amperes

Peak Collector Current ICM 400* Amperes

Emitter Current** (TC = 25°C) IE 200* Amperes

Peak Emitter Current** IEM 400* Amperes

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 590 Watts

Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 830 Watts

Mounting Torque, M5 Main Terminal — 30 in-lb

Mounting Torque, M6 Mounting — 40 in-lb

Weight — 310 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

–40 to 125 °C

stg

600 Volts

CES

±20 Volts

GES

2500 Volts

ISO

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

I

Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V — 1240 — nC

Emitter-Collector Voltage** VEC I

V

CES

V

GES

I

GE(th)

IC = 200A, VGE = 15V, Tj = 25°C — 2.0 2.7 Volts

CE(sat)

C

= V

CE

GE

= 20mA, VCE = 10V 5.0 6.0 7.0 Volts

C

= 200A, VGE = 15V, Tj = 125°C — 1.95 — Volts

= 100A, VGE = 0V — — 2.6 Volts

E

, VGE = 0V — — 1.0 mA

CES

= V

, VCE = 0V — — 0.5 µA

GES

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Time Fall Time tf Inductive Load Switching Operation, — — 150 ns

Diode Reverse Recovery Time** trr I

Diode Reverse Recovery Charge** Qrr — 3.5 — µC

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

— — 55 nf

ies

V

oes

— — 2.0 nf

res

— — 250 ns

d(on)

V

d(off)

GE1

= 10V, VGE = 0V — — 3.6 nf

CE

= 300V, IC = 200A, — — 150 ns

CC

= V

= 15V, RG = 6.3Ω, — — 500 ns

GE2

= 200A — — 150 ns

E

rating.

j(max)

2 Rev. 11/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

2

10

1

10

0

10

-1

10

1

0 0.5 1.5 2.01.0 3.02.5

10

1

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

6810 1412 16 18 20

4

3

2

1

0

Tj = 25°C

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 400A

IC = 200A

IC = 80A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0123 45

100

0

VGE = 20V

11

10

15

8

8.5

9

9.5

7

7.5

Tj = 25

o

C

200

300

400

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

3.0

1.5

1.0

2.0

0

100

300

2.5

0.5

0

400

VGE = 15V

Tj = 25°C
T

j

= 125°C

200

10

-1

13

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

1

10

2

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

10

3

t

d(off)

t

d(on)

t

r

t

f

VCC = 300V
V

GE

= ±15V

R

G

= 6.3Ω

T

j

= 125°C

Inductive Load

CM200DU-12NFH
Dual IGBTMOD™ NFH-Series Module

200 Amperes/600 Volts

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

T

Contact Thermal Resistance R

External Gate Resistance RG 3.1 — 31 Ω

Q Per IGBT 1/2 Module, TC Reference — — 0.21 °C/W

th(j-c)

D Per FWDi 1/2 Module, TC Reference — — 0.35 °C/W

th(j-c)

'Q Per IGBT 1/2 Module, — — 0.15 °C/W

th(j-c)

Reference Point Under Chips

C

Per 1/2 Module, Thermal Grease Applied — 0.07 — °C/W

th(c-f)

3Rev. 11/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25C
Per Unit Base =
R

th(j-c)

=

0.21C/W
(IGBT)
R

th(j-c)

=

0.35C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

20

0

16

12

8

4

0

600 900300 18001200 1500

VCC = 300V

VCC = 200V

IC = 200A

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

1

10

1

10

2

10

0

10

-1

VCC = 300V

V

GE

= 15V

R

G

= 6.3Ω

T

j

= 125C
Inductive Load
C Snubber at Bus

10

3

SWITCHING LOSS VS.

COLLECTOR CURRENT

(TYPICAL)

E

SW(on)

E

SW(off)

GATE RESISTANCE, R

G

, (Ω)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

0

10

1

10

1

10

0

VCC = 300V
V

GE

= 15V

I

C

= 200A

T

j

= 125C
Inductive Load
C Snubber at Bus

10

2

SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

E

SW(on)

E

SW(off)

EMITTER CURRENT, I

E

, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

1

10

1

10

2

10

0

10

-1

VCC = 300V
V

GE

= 15V

R

G

= 6.3Ω

T

j

= 125C
Inductive Load
C Snubber at Bus

10

3

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(TYPICAL)

E

rr

EMITTER CURRENT, I

E

, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

2

10

1

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

10

3

VCC = 300V
V

GE

= 15V

R

G

= 6.3Ω

T

j

= 25C

Inductive Load

I

rr

t

rr

GATE RESISTANCE, RG, (Ω)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

1

10

0

10

1

10

0

10

-1

VCC = 300V
V

GE

= 15V

I

E

= 200A

T

j

= 125C
Inductive Load
C Snubber at Bus

10

2

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

E

rr

CM200DU-12NFH
Dual IGBTMOD™ NFH-Series Module

200 Amperes/600 Volts

4 Rev. 11/09