C&H Technology CM1800HCB-34N User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM1800HCB-34N

G

T

U NUTS

(3 TYP)

P

Q

S

A

D

LLL

V NUTS
(6 TYP)

B

W
(8 TYP)

H

J

KM

NN

X

C

F

R

E

G

E

C

C

EE

CC

C

CM

EG

E

C

E

E

C

C

E

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Single IGBTMOD™
HVIGBT Module

1800 Amperes/1700 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 7.48±0.02 190.0±0.5

B 5.51±0.02 140.0±0.5

C 1.50+0.04/-0.0 38.0+1.0/-0.0

D 6.73±0.004 171.0±0.1

E 4.88±0.004 124.0±0.1

F 1.57±0.008 40.0±0.2

G 0.79+0.04/-0.008 20.0+1.0/-0.2

H 0.80±0.008 20.25±0.2

J 1.62±0.012 41.25±0.3

K 3.13±0.012 79.4±0.3

L 2.24±0.004 57.0±0.1

Dimensions Inches Millimeters

M 0.51±0.008 13.0±0.2

N 2.42±0.012 61.5±0.3

P 0.59±0.008 15.0±0.2

Q 1.57±0.012 40.0±0.3

R 0.20±0.008 5.2±0.2

S 1.16±0.02 29.5±0.5

T 1.10+0.04/-0.0 28.0+1.0/-0.0

U M4 Metric M4

V M8 Metric M8

W 0.28±0.004 Dia. 7.0±0.1 Dia.

X 0.20±0.006 5.0±0.15

system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM1800HCB-34N is a 1700V
(V

), 1800 Ampere Single

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts

CM 1800 1700

V

CES

112/08

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM1800HCB-34N Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Operating Temperature Top -40 to 125 °C

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, Tc = 80°C) IC 1800 Amperes

Peak Collector Current (Pulse) ICM 3600* Amperes

Diode Forward Current** (Tc = 25°C) IE 1800 Amperes

Diode Forward Surge Current** (Pulse) IEM 3600* Amperes

Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj ≤ 150°C) PC 13800 Watts

Max. Mounting Torque M8 Terminal Screws – 115 in-lb

Max. Mounting Torque M6 Mounting Screws – 53 in-lb

Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb

Max. Turn-off Switching Current (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 3600 Amperes

Short-circuit Capability, Max. Pulse Width (VCC ≤ 1000V, VGE = ±15V, Tj = 125°C) – 10 μs

Max. Reverse Recovery Instantaneous Power** – 540 kW

(VCC ≤ 1200V, diE/dt ≤ t.b.d A/μs, Tj = 125°C)

Module Weight (Typical) – 1.5 kg

V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.) V

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

op(max)

rating.

-40 to 125 °C

stg

1700 Volts

CES

±20 Volts

GES

4000 Volts

iso

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

V

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

I

Total Gate Charge QG VCC = 900V, IC = 1800A, VGE = 15V – 13.6 – μC

Emitter-Collector Voltage** VEC I

I

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

V

CES

I

GE(th)

V

GES

IC = 1800A*, VGE = 15V, Tj = 25°C – 2.0 – Volts

CE(sat)

= V

CE

= V

CE

= 1800A*, VGE = 15V, Tj = 125°C – 2.2 – Volts

C

= 1800A*, VGE = 0V, Tj = 25°C – 2.35 – Volts

E

= 1800A*, VGE = 0V, Tj = 125°C – 1.85 – Volts

E

, VGE = 0V, Tj = 25°C – – 8.0 mA

CES

, VGE = 0V, Tj = 125°C – – 16.0 mA

CES

= 180mA, VCE = 10V 5.0 6.0 7.0 Volts

C

= V

GE

, VCE = 0V – – 0.5 μA

GES

2 12/08

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Resistive Turn-on Delay Time t

Load Rise Time tr V

Turn-on Switching Energy Eon R

Switching Turn-off Delay Time t

Times Fall Time tf V

Turn-off Switching Energy E

Diode Reverse Recovery Time* trr V

Diode Reverse Recovery Charge* Qrr diE/dt = -7000A/μs, – 900 – μC

Reverse Recovery Energy* E

* Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

V

ies

f = 100 kHz – 19.2 – nF

oes

V

res

V

d(on)

V

d(off)

R

off

T

rec

= 10V , VGE = 0V, – 352 – nF

CE

= 10V , VGE = 0V, f = 1 MHz – 5.6 – nF

CE

= 900V, IC = 1800A, – 0.95 – μs

CC

= -V

GE1

= 0.7Ω, Tj = 125°C – 390 – mJ/P

G(on)

= 900V, IC = 1800A, – 1.60 – μs

CC

= -V

GE1

= 1.3Ω, Tj = 125°C – 770 – mJ/P

G(off)

= 900V, IE = 1800A, – 1.20 – μs

CC

= 15V, – 0.30 – μs

GE2

= 15V, – 0.25 – μs

GE2

= 125°C – 480 – mJ/P

j

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance, Case to Fin R

Comparative Tracking Index CTI – 600 – – –

Clearance – – 19.5 – – mm

Internal Inductance L

Internal Lead Resistance R

Q Per IGBT – – 9.0 K/kW

th(j-c)

D Per FWDi – – 13.0 K/kW

th(j-c)

Per Module, Thermal Grease Applied – 7.0 – K/kW

th(c-f)

IGBT Part – 10.0 – nH

C-E(int)

IGBT Part – 0.16 – mΩ

C-E(int)

312/08

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

TIME, (s)

TRANSIENT IMPEDANCE, Rth

(j-c)

10

-3

10

-2

10

-1

10

0

10

1

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDI)

1.2

1.0

0.4

0

0.2

0.6

0.8

SINGLE PULSE
T

C

= 25°C

IGBT = R

th(j-c)

Q =
9°K/kW
FWDI = R

th(j-c)

D =

13°K/kW

COLLECTOR-EMITTER VOLTAGE, V

CES

, (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

4.0

2.5

2.0

1.5

3.0

3.5

1.0

0

0.5

3500300020001000 250015005000

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (pF)

10

-1

10

0

10

1

10

2

CAPACITANCE VS.

COLLECTOR-EMITTER VOLTAGE

(TYPICAL)

10

4

10

3

10

1

10

0

10

2

VGE = 15V

T

j

= 25°C

T

j

= 125°C

FREE-WHEEL DIODE FORWARD

CHARACTERISTICS (TYPICAL)

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

EMITTER CURRENT, IE, (AMPERES)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

20

16

12

8

4

0

HALF-BRIDGE SWITCHING

ENERGY CHARACTERISTICS

(TYPICAL)

3000

HALF-BRIDGE SWITCHING

ENERGY CHARACTERISTICS

(TYPICAL)

200

0

1200

600

800

1000

0 300025001000500 1500 2000

400

FREE-WHEEL DIODE REVERSE RECOVERY

ENERGY CHARACTERISTICS (TYPICAL)

REVERSE RECOVERY ENERGY, E

rec

, (mJ/PULSE)

EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω)

REVERSE RECOVERY SWITCHING

ENERGY VS. GATE RESISTANCE

CHARACTERISTICS (TYPICAL)

C

ies

C

oes

C

res

VGE = 0V
f = 100kHz
T

j

= 25°C

GATE CHARGE, QG, (µC)

GATE CHARGE, V

GE

0 4 8 1612 20

IC = 1800A
V

CC

= 900V

T

j

= 25°C

200

400

600

800

1000

1800

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING ENERGY, (mJ/P)

0 1000500 1500 2000 2500

1600

1400

1200

VCC = 900V
V

GE

= ±15V

R

G(on)

= 0.7Ω

L

S

= 100nH

T

j

= 125°C

0

VCC = 900V
V

GE

= ±15V

R

G(on)

= 0.7Ω

R

G(off)

= 1.7Ω

L

S

= 100nH
Tj = 125°C
Inductive Load

4.0

2.5

2.0

1.5

3.0

3.5

1.0

0

0.5

3500300020001000 250015005000

VGE = 15V

T

j

= 25°C

T

j

= 125°C

E

on

E

off

5

500

1000

1500

2000

4000

GATE RESISTANCE, RG, (Ω)

SWITCHING ENERGY, (mJ/P)

− dv/dt

(off)

, (V/µs)

0 21 3 4

3500

3000

2500

0

500

1000

1500

2000

4000

3500

3000

2500

0

VCC = 900V
V

GE

= ±15V

I

C

= 1800A

L

S

= 100nH
Tj = 125°C
dv/dt

(off)

= 20-80%

Inductive Load

VCC = 900V
V

GE

= ±15V

I

C

= 1800A

L

S

= 100nH
Tj = 125°C
dv/dt

(off)

= 20-80%

Inductive Load

E

on

E

off

5

100

200

300

400

800

SWITCHING ENERGY, (mJ/P)

− dv/dt

(rec)

, (V/µs)

0 21 3 4

700

600

500

0

1000

2000

3000

4000

8000

7000

6000

5000

0

CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

4 12/08