C&H Technology CM1800HC-34N User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM1800HC-34N

A

DD

F

E

C

42

3

EG

C

1

B

G

H

N

T

R

4(C) 2(C)

3(E)

E

G

C

P

1(E)

Q

S

J

V

U

W

X

K (4 TYP)

M (3 TYP)

L
(6 PLACES)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Single IGBTMOD™
HVIGBT Module

1800 Amperes/1700 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.19±0.02 130.0±0.5

B 5.51±0.02 140.0±0.5

C 4.88±0.01 124.0±0.25

D 2.24±0.01 57.0±0.25

E 1.57±0.008 40.0±0.2

F 0.79±0.004 20.0±0.1

G 1.92±0.008 48.8±0.2

H 0.42±0.008 10.65±0.2

J 0.41±0.008 10.35±0.2

K M8 Metric M8

L 0.28 Dia. 7.0 Dia.

Dimensions Inches Millimeters

M M4 Metric M4

N 2.42±0.012 61.5±0.3

P 1.50+0.04/-0.0 38.0+1.0/-0.0

Q 0.2±0.008 5.0±0.2

R 0.65 Min. 16.5 Min.

S 0.30 Min. 7.7 Min.

T 0.71±0.008 18.0±0.2

U 1.16±0.02 29.5±0.5

V 0.60±0.008 15.0±0.2

W 0.21±0.008 5.2±0.2

X 1.10+0.04/-0.0 28.0+1.0/-0.0

£ Low Drive Power
£ Low V

CE(sat)

£ Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM1800HC-34N is a 1700V
(V

), 1800 Ampere Single

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 1800 34

V

CES

1Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800HC-34N
Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM1800HC-34N Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Operating Temperature T

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, Tc = 75°C) IC 1800 Amperes

Peak Collector Current (Pulse) ICM 3600* Amperes

Emitter Current** (Tc = 25°C) IE 1800 Amperes

Emitter Surge Current** (Pulse) IEM 3600* Amperes

Maximum Collector Dissipation (Tc = 25°C, IGBT Part, T

≤ 125°C) PC 10000 Watts

j(max)

Max. Mounting Torque M8 Main Terminal Screws – 177 in-lb

Max. Mounting Torque M6 Mounting Screws – 53 in-lb

Max. Mounting Torque M4 Auxiliary Terminal Screws – 27 in-lb

Module Weight (Typical) – 0.8 kg

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V

Maximum Turn-Off Switching Current (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 3600 Amperes

Short Circuit Capability, Maximum Pulse Width (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 10 µs

Maximum Reverse Recovery Instantaneous Power – 750 kW
(VCC ≤ 1200V, die/dt ≤ 4200A/µs, Tj = 125°C)

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

oprmax

rating (125°C).

-40 to 125 °C

stg

-40 to 125 °C

opr

1700 Volts

CES

±20 Volts

GES

4000 Volts

iso

2 Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM1800HC-34N
Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

V

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

V

GES

GE

= V

Collector-Emitter Saturation Voltage V

I

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 850V, IC = 1800A, VGE = 15V – 10.2 – µC

Emitter-Collector Voltage** VEC I

I

Turn-On Delay Time t

Turn-On Rise Time tr V

Turn-On Switching Energy Eon Inductive Load – 550 – mJ/P

Turn-Off Delay Time t

Turn-Off Fall Time tf V

Turn-Off Switching Energy E

Reverse Recovery Time** Irr V

Reverse Recovery Time** trr die/dt = -3700A/µs, – 1.0 – µs

Reverse Recovery Charge** Qrr T

Reverse Recovery Energy** E

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

V

CES

I

GE(th)

, VCE = 0V – – 0.5 µA

GES

IC = 1800A, VGE = 15V, Tj = 25°C – 2.15 2.8 Volts

CE(sat)

V

ies

f = 100kHz, – 14.4 – nF

oes

T

res

V

d(on)

V

d(off)

Inductive load – 560 – mJ/P

off

Inductive Load – 280 – mJ/P

rec

= V

CE

= V

CE

= 1800A, VGE = 15V, Tj = 125°C – 2.4 – Volts

C

= 1800A, VGE = 0V, Tj = 25°C – 2.6 3.3 Volts

E

= 1800A, VGE = 0V, Tj = 125°C – 2.3 – Volts

E

GE1

GE1

, VGE = 0V, Tj = 25°C – – 6.0 mA

CES

, VGE = 0V, Tj = 125°C – 4.5 12.0 mA

CES

= 180mA, VCE = 10V 6.0 7.0 8.0 Volts

C

= 10V, VGE = 0V, – 264 – nF

CE

= 25°C – 4.2 – nF

j

= 850V, IC = 1800A, – 1.0 – µs

CC

= -V

= -V

= 15V, R

GE2

= 850V, IC = 1800A, – 1.2 – µs

CC

= 15V, R

GE2

= 850V, IE = 1800A, – 720 – Amperes

CC

= 125°C, – 420 – µC

j

= 0.9Ω, – 0.4 – µs

G(on)

= 2.2Ω, – 0.3 – µs

G(off)

Thermal Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance, Case to Fin R

Q Per IGBT – – 12.5 K/kW

th(j-c)

D Per FWDi – – 28.0 K/kW

th(j-c)

Per Module, Thermal Grease Applied – 11.0 – K/kW

th(c-f)

Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Comparative Tracking Index CTI – 600 – – –

Clearance – – 19.5 – – mm

Creepage Distance – – 32.0 – – mm

Internal Inductance L

Internal Lead Resistance R

– – 16 – nH

C-E(int)

– – 0.14 – mΩ

C-E(int)

3Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

800

400

1600

1200

0

3600

0635412

COLLECTOR-EMITTER VOLTAGE, V

CE(sat)

, (VOLTS)

Tj = 25°C

2000

2400

2800

3200

VGE = 20V

9V

10V

12V

15V

8V

0.5

1. 0

1. 5

0

4.0

3.5

3.0

FREE-WHEEL DIODE FORWARD

CHARACTERISTICS (TYPICAL)

0 400030001000 2000

VGE = 0V

Tj = 25°C
T

j

= 125°C

2.0

2.5

100

200

0

700

600

500

0 400030001000 2000

300

400

COLLECTOR-EMITTER VOLTAGE, V

CES

, (VOLTS)

EMITTER CURRENT, IE, (AMPERES)

FREE-WHEEL DIODE REVERSE RECOVERY

ENERGY CHARACTERISTICS (TYPICAL)

V

CC

= 850V

V

GE

= ±15V

R

G

= 0.9Ω

L

S

= 100nH

T

j

= 125°C

100

200

0

700

600

500

0 400030001000 2000

300

400

100

200

0

700

600

500

0108624

300

400

VCC = 850V
V

GE

= ±15V

R

G

= 0.9Ω

L

S

= 100nH

T

j

= 125°C

REVERSE RECOVERY ENERGY, E

rec

, (mJ/PULSE)

EMITTER CURRENT, IE, (AMPERES)

FREE-WHEEL DIODE REVERSE RECOVERY

ENERGY CHARACTERISTICS (TYPICAL)

V

CC

= 850V

V

GE

= ±15V

I

C

= 1800A

L

S

= 100nH

T

j

= 125°C

100

200

0

700

600

500

0108624

300

400

VCC = 850V
V

GE

= ±15V

I

C

= 1800A

L

S

= 100nH

T

j

= 125°C

800

400

1200

0

3600

614879 0 300020001000 400013121110

2400

2000

1600

2800

3200

REVERSE RECOVERY ENERGY, E

rec

, (J/PULSE)

GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω)

FREE-WHEEL DIODE REVERSE RECOVERY

CHARGE CHARACTERISTICS (TYPICAL)

REVERSE RECOVERY CHARGE, Q

rr

, (J/PULSE)

EMITTER CURRENT, IE, (AMPERES)

FREE-WHEEL DIODE REVERSE RECOVERY

CHARGE CHARACTERISTICS (TYPICAL)

REVERSE RECOVERY CHARGE, Q

rr

, (J/PULSE)

COLLECTOR CURRENT, I

C

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

TRANSFER CHARACTERISTICS

(TYPICAL)

Tj = 25°C
T

j

= 125°C

V

CE

= 20V

SWITCHING TIME, t

d(on)

, (ns)

TURN-ON DELAY TIME VS.

COLLECTOR CURRENT

(TYPICAL)

10

1

10

0

10

-1

COLLECTOR CURRENT, I

C

, (AMPERES)

SWITCHING TIME, t

d(off)

, (ns)

TURN-OFF DELAY TIME VS.

COLLECTOR CURRENT

(TYPICAL)

VCC = 850V
V

GE

= ±15V

R

G(off)

= 2.2Ω

R

G(on)

= 0.9Ω

L

S

= 100nH

T

j

= 125°C

0 300020001000 4000

10

1

10

0

10

-1

VCC = 850V
V

GE

= ±15V

R

G(off)

= 2.2Ω

R

G(on)

= 0.9Ω

L

S

= 100nH

T

j

= 125°C

COLLECTOR CURRENT, IC, (AMPERES)

CM1800HC-34N
Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

4 Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME, t

f

, (ns)

FALL TIME VS.

COLLECTOR CURRENT

(TYPICAL)

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME, t

r

, (ns)

RISE TIME VS.

COLLECTOR CURRENT

(TYPICAL)

2000

800

400

1200

1600

0

4000300020001000

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

off

, (mJ/PULSE)

SWITCHING LOSS (OFF) VS.

COLLECTOR CURRENT

(TYPICAL)

0

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

on

, (mJ/PULSE)

SWITCHING LOSS (ON) VS.

COLLECTOR CURRENT

(TYPICAL)

SWITCHING LOSS, E

off

, (mJ/PULSE)

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

on

, (mJ/PULSE)

GATE RESISTANCE, RG, (Ω)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (pF)

10

-1

10

0

10

1

10

2

CAPACITANCE VS.

COLLECTOR-EMITTER VOLTAGE

(TYPICAL)

10

3

10

1

10

0

10

2

C

ies

C

oes

C

res

VGE = 15V
f = 100kHz
T

j

= 25°C

COLLECTOR-EMITTER VOLTAGE, V

CES

, (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

VCC = 850V
V

GE

= ±15V

R

G(off)

= 2.2Ω

R

G(on)

= 0.9Ω

L

S

= 100nH

T

j

= 125°C

2000

800

400

1200

1600

0

40003000200010000

VCC = 850V
V

GE

= ±15V

R

G(off)

= 2.2Ω

R

G(on)

= 0.9Ω

L

S

= 100nH

T

j

= 125°C

3500

2500

2000

1500

3000

1000

0

500

1068420

3500

2500

2000

1500

3000

1000

0

500

1068420

4.0

2.5

2.0

1.5

3.0

3.5

1.0

0

0.5

40003000200010000

VCC = 850V
V

GE

= ±15V

I

C

= 1800A

L

S

= 100nH

T

j

= 125°C

VCC = 850V
V

GE

= ±15V

I

C

= 1800A

L

S

= 100nH

T

j

= 125°C

VGE = 15V

Tj = 25°C
T

j

= 125°C

SWITCHING LOSS (OFF) VS.

GATE RESISTANCE

(TYPICAL)

SWITCHING LOSS (ON) VS.

GATE RESISTANCE

(TYPICAL)

VCC = 850V
V

GE

= ±15V

R

G(off)

= 2.2Ω

R

G(on)

= 0.9Ω

L

S

= 100nH

T

j

= 125°C

VCC = 850V
V

GE

= ±15V

R

G(off)

= 2.2Ω

R

G(on)

= 0.9Ω

L

S

= 100nH

T

j

= 125°C

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE, V

GE

20

0246 8101214

16

12

8

4

0

0300020001000 4000

10

1

10

0

10

-1

0300020001000 4000

10

1

10

0

10

-1

IC = 1200A
V

CC

= 850V

T

j

= 25°C

CM1800HC-34N
Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

5Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

TIME, (s)

TRANSIENT IMPEDANCE, Rth

(j-c)

10

-3

10

-2

10

-1

10

0

10

1

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDI)

1.2

1.0

0.4

0

0.2

0.6

0.8

SINGLE PULSE
T

C

= 25°C

IGBT = R

th(j-c)

Q =

12.5°K/kW
FWDI = R

th(j-c)

D =

28°K/kW

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY

SAFE OPERATING AREA

(TYPICAL)

2000150010005000

COLLECTOR CURRENT, I

C

, (AMPERES)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE BIAS

SAFE OPERATING AREA

(TYPICAL)

4500

4000

3000

3500

2000

2500

0

1000

1500

500

4500

4000

3000

3500

2000

2500

0

1000

1500

500

2000150010005000

VCC ≤ 1200V
V

GE

= ±15V

R

G

≥ 2.2Ω

T

j

= 125°C

VCC ≤ 1200V
di/dt ≤ 4200A/µs
T

j

= 125°C

CM1800HC-34N
Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

6 Rev. 4/09