C&H Technology CM15TF-24H User Manual

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Suite 108
Minnetonka, MN 55345

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM15TF-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

S - DIA.
(2 TYP.)

G

J

M

P

BuP

BuN

B

R R R

BuP

EuP

BvP

BvN

H H

C

EvP

v

EvN

EvP

EvN

P

UVW

N

BuN

EuN

K

.250 TAB

BvP

EuP

u

BvN

EuN

N

BwP

BwN

EwP

EwN

N

.110 TAB

PQQ

BwP

BwN

EwP

w

EwN

L

E

D

F

R

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.21 107.0
B 3.66±0.01 93.0±0.2
C 3.19 81.0
D 1.77 45.0
E 1.18 30.0
F 1.04 26.5
G 1.01 25.6
H 0.85 21.5

Dimensions Inches Millimeters

K 0.79 20.0
L 0.71 18.0
M 0.69+0.02 17.5±0.5
N 0.69 17.5
P 0.63 16.0
Q 0.55 14.0
R 0.30 7.5
S 0.22 Dia. Dia. 5.5

J 0.83 21.0

Six-IGBT IGBTMOD™
H-Series Module

15 Amperes/ 1200 Volts

Description:

Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies

□ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM15TF-24H
is a 1200V (V
Six-IGBT IGBTMOD™ Power
Module.

Type Current Rating V

CM 15 24

CE(sat)

(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking

), 15 Ampere

CES

Amperes Volts (x 50)

CES

323

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM15TF-24H
Six-IGBT IGBTMOD™ H-Series Module

15 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM15TF-24H Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (T ypical) – 150 Grams
V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

RMS

–40 to 150 °C
–40 to 125 °C

1200 Volts

±20 Volts

15 Amperes

30* Amperes

15 Amperes

30* Amperes

150 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5

GES

µ

A

IC =1. 5mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 15A, VGE = 15V – 2.5 3.4** Volts

IC = 15A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

FM

VCC = 600V, IC = 15A, VGS = 15V – 75 – nC

IE = 15A, VGS = 0V – – 3.5 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Load Turn-on Delay Time t

d(on)

Resistive Rise Time t
Switch Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V, f = 1MHz – – 1.1 nF

VCC = 600V, IC = 150A, – – 200 ns

V

= V

GE1

= 15V, RG = 21Ω – – 150 ns

GE2

IE = 15A, diE/dt = –30A/µs––250ns
IE = 15A, diE/dt = –30A/µs – 0.11 –

– – 3 nF

– – 0.6 nF
– – 100 ns

– – 350 ns

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.058 °C/W

Per IGBT – – 0.80 °C/W

Per FWDi – – 1.40 °C/W

324

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM15TF-24H
Six-IGBT IGBTMOD™ H-Series Module

15 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

30

25

20

, (AMPERES)

C

15

VGE = 20V

T

= 25oC

j

15

12

11

10

10

9

5

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

7

(TYPICAL)

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 30A

IC = 15A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

COLLECTOR CURRENT, IC, (AMPERES)

t

t

d(off)

d(on)

t

f

t

r

(TYPICAL)

IC = 6A

VCC = 600V

= ±15V

V

GE

= 21Ω

R

G

= 125°C

T

j

1

10

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

30

25

20

, (AMPERES)

C

TRANSFER CHARACTERISTICS

(TYPICAL)

VCE = 10V

Tj = 25°C
T

= 125°C

j

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

15

10

5

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

2

10

Tj = 25°C

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

di/dt = -30A/µsec

= 25°C

T

j

, (ns)

rr

2

10

(TYPICAL)

(TYPICAL)

I

rr

t

rr

10

10

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

10

, (nF)

res

, C

10

oes

, C

ies

-1

10

CAPACITANCE, C

-2

10

1

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

0

2

1

0

0

5 1015202530

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

1

0

VGE = 0V

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

IC = 15A

0

10

GATE CHARGE, V

VCC = 400V

VCC = 600V

10

CE

C

ies

C

oes

C

res

1

GE

2

10

8

REVERSE RECOVERY TIME, t

1

10

2

10

0

10

EMITTER CURRENT, IE, (AMPERES)

1

10

10

2

10

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

-1

0

0 120

20 40 60 80 100

GATE CHARGE, QG, (nC)

325

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM15TF-24H
Six-IGBT IGBTMOD™ H-Series Module

15 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.8°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 1.4°C/W

10

0

1

10

-1

10

-2

10

-3

-4

10

-3

10

326