6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
CM150TX-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
AE
DETAIL "A"
AJ
AH
AG
DETAIL "B"
2
A
E
F
G
K
KQ
JMMM
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
53
54
N
K
55
(4 PLACES)
K
56
57
L
58
59
K
60
K
61
V
12345678910111213141516171819202122
W
U
X
P(54~56)
N(59~61)
Caution: Each (three) pin terminal of P/N/P1/N1/U/V/W is connected in the module,
however, all three pins should be used for external wiring.
LHLLLL
UP(1)
G
E
UP(2)
U(48~50) V(42~44) W(36~38)
G
UN(5)
K
K
D
DETAIL "A"
K
DETAIL "B"
VP(9)
G
E
VP(10)
G
VN(13)
K
K
30
K
29
K
28
27
R B
L
26
25
K
24
K
23
KKKKKK
Tolerance Otherwise Specified (mm)
Y
WP(17)
G
E
WP(18)
WN(21)
G
EWN(22)EVN(14)EUN(6)
AD
K
AC
AA
AB
C
Z
S
P
AH
T
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to ±0.4
P1(28~30)
TH
TH1
(31)
(32)
N1(23~25)
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.49 114.05
E 4.33±0.02 110.0±0.5
F 3.9 99.0
G 3.72 94.5
H 0.59 15.0
J 0.96 24.52
K 0.15 3.81
L 0.45 11.43
M 0.6 15.24
N 0.22 Dia. 5.5 Dia.
P 2.13 54.2
Q 0.30 7.75
R 1.97±0.02 50.0±0.5
S 2.26 57.5
Dimensions Inches Millimeters
U 0.16 4.06
V 0.46 11.66
W 0.14 3.75
X 0.14 3.5
Y 0.03 0.8
Z 0.28 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.03 0.65
AD 0.05 1.15
AE 0.29 7.4
AF 0.047 1.2
AG 0.49 12.5
AH 0.12 3.0
AJ 0.17 Dia. 4.3 Dia.
AK 0.102 Dia. 2.6 Dia.
AL 0.088 Dia. 2.25 Dia.
T 0.165 4.2
Six IGBTMOD™
NX-S Series Module
150 Amperes/1200 Volts
AF
AK
AL
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM150TX-24S is a 1200V (V
150 Ampere Six IGBTMOD™ Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 150 24
CE(sat)
Free-Wheel Diode
Heat Sinking
),
CES
V
CES
107/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150TX-24S
Six IGBTMOD™ NX-S Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 120°C)
*2,*3
IC 150 Amperes
Collector Current (Pulse)*4 I
Total Power Dissipation (TC = 25°C)
Emitter Current (TC = 25°C)
*2,*3
P
*2,*3
I
Emitter Current (Pulse)*4 I
1200 Volts
CES
±20 Volts
GES
300 Amperes
CRM
1150 Watts
tot
*1
150 Amperes
E
*1
300 Amperes
ERM
Module
Characteristics Symbol Rating Units
Maximum Junction Temperature T
Maximum Case Temperature*2 T
Operating Junction Temperature T
Storage Temperature T
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*4 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
j(max)
) rating.
j(max)
rating.
0 0
19.9
30.6
Each mark points to the center position of each chip.
Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor
175 °C
j(max)
125 °C
C(max)
-40 to +150 °C
j(op)
-40 to +125 °C
stg
2500 Volts
ISO
20.4033.9
52 51 50 49 48 47 46 45 44 4342 41 40 39 38 37 36 35 34 33 32 31
53
Di
54
UP
55
56
Tr
57
UP
58
59
60
61
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
51.4
64.9
82.4
95.9
104.5
Di
Di
VP
UN
Tr
Tr
VP
UN
Di
Di
WP
VN
Tr
Tr
WP
VN
30
Di
29
WN
Th
28
Tr
27
26
WN
25
24
23
LABEL SIDE
18.4
24.1
29.2
2 07/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150TX-24S
Six IGBTMOD™ NX-S Series Module
150 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 150A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts
IC = 150A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 150A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 150A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V — 350 — nC
Turn-on Delay Time t
Rise Time tr VCC = 600V, IC = 150A, VGE = ±15V, — — 200 ns
Turn-off Delay Time t
Fall Time tf — — 300 ns
Emitter-Collector Voltage V
(Terminal) IE = 150A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts
IE = 150A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts
Emitter-Collector Voltage V
(Chip) IE = 150A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 150A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Internal Lead Resistance R
Per Switch,TC = 25°C
Internal Gate Resistance rg Per Switch — 13 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 15mA, VCE = 10V 5.4 6.0 6.6 Volts
GE(th)
IC = 150A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts
CE(sat)
IC = 150A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
CE(sat)
— — 15 nF
ies
VCE = 10V, VGE = 0V — — 3.0 nF
oes
— — 0.25 nF
res
— — 800 ns
d(on)
RG = 0Ω, Inductive Load — — 600 ns
d(off)
*1
IE = 150A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts
EC
*1
IE = 150A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
EC
*1
VCC = 600V, IE = 150A, VGE = ±15V — — 300 ns
rr
*1
RG = 0Ω, Inductive Load — 8.0 — µC
rr
CC' + EE'
Main Terminals-Chip, — — 1.8 mΩ
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
*2
0 0
19.9
30.6
20.4033.9
52 51 50 49 48 47 46 45 44 4342 41 40 39 38 37 36 35 34 33 32 31
53
Di
54
UP
55
56
Tr
57
UP
58
59
60
61
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Each mark points to the center position of each chip.
Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor
51.4
64.9
82.4
95.9
104.5
Di
Di
VP
UN
Tr
Tr
VP
UN
Di
Di
WP
VN
Tr
Tr
WP
VN
30
Di
29
WN
Th
28
Tr
27
26
WN
25
24
23
LABEL SIDE
18.4
24.1
29.2
307/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150TX-24S
Six IGBTMOD™ NX-S Series Module
150 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)
NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*2 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R
B Constant B
Approximate by Equation*6 — 3375 — K
(25/50)
= 493Ω -7.3 — +7.8 %
100
Power Dissipation P25 TC = 25°C*2 — — 10 mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*2 R
Thermal Resistance, Junction to Case*2 R
Contact Thermal Resistance, R
Case to Heatsink*2 Per 1 Module
Q IGBT Part, Per 1/6 Module — — 0.13 K/W
th(j-c)
D FWDi Part, Per 1/6 Module — — 0.23 K/W
th(j-c)
Thermal Grease Applied, — 0.015 — K/W
th(c-f)
*7
Mechanical Characteristics
Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Weight m — 300 — Grams
Creepage Distance ds Terminal to Terminal 10.28 — — mm
Terminal to Baseplate 14.27 — — mm
Clearance da Terminal to Terminal 10.28 — — mm
Terminal to Baseplate 12.33 — — mm
Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm
Recommended Operating Conditons, Ta = 25°C
DC Supply Voltage VCC Applied Across P-N/P1-N1 Terminals — 600 850 Volts
Gate-Emitter Drive Voltage V
G*P-Es*P/G*N-Es*N Terminals
External Gate Resistance RG Per Switch 0 — 30 Ω
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 B
(25/50)
R
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
= In(
R
25
)/( 1 –
50 T25 T50
MOUNTING SIDE
1
)
MOUNTING SIDE
+ : CONVEX
– : CONCAVE
X
Applied Across 13.5 15.0 16.5 Volts
GE(on)
Y
MOUNTING
SIDE
0 0
19.9
30.6
20.4033.9
52 51 50 49 48 47 46 45 44 4342 41 40 39 38 37 36 35 34 33 32 31
53
Di
54
UP
55
56
Tr
57
UP
58
59
60
61
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Each mark points to the center position of each chip.
Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor
51.4
64.9
82.4
Di
Di
VP
UN
Tr
Tr
VP
UN
Di
Di
WP
VN
Tr
Tr
WP
VN
– : CONCAVE
+ : CONVEX
95.9
104.5
30
Di
WN
Th
Tr
WN
29
28
27
26
25
24
23
LABEL SIDE
18.4
24.1
29.2
4 07/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150TX-24S
Six IGBTMOD™ NX-S Series Module
150 Amperes/1200 Volts
SATURATION VOLTAGE CHARACTERISTICS
300
250
200
, (AMPERES)
C
COLLECTOR-EMITTER
VGE = 15V
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
(TYPICAL)
150
100
50
COLLECTOR-CURRENT, I
0
0
30
25
, (mJ/PULSE)
rr
20
, E
off
, E
on
15
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 600V
V
= ±15V
GE
R
= 5.1Ω
G
T
= 125°C
j
Inductive Load
E
on
E
off
E
rr
CE(sat)
10
5
SWITCHING LOSS, E
0
0 50 100 150
COLLECTOR CURRENT, IC, (AMPERES)
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
300
VGE = 0V
250
200
, (AMPERES)
E
150
100
EMITTER CURRENT, I
50
0
3.51.5 2.00.5 1.0 2.5 3.0
0 1.0 0.5 2.51.5 2.0 3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
70
VCC = 600V
V
GE
60
I
= 150A
C
T
= 150°C
j
50
, (mJ/PULSE)
rr
Inductive Load
, E
off
40
, E
on
30
20
10
SWITCHING LOSS, E
0
0 10 20 40 5030 60
(TYPICAL)
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
= ±15V
E
E
E
GATE RESISTANCE, RG, (Ω)
30
25
, (mJ/PULSE)
rr
20
, E
off
, E
on
15
10
5
SWITCHING LOSS, E
0
70
on
off
rr
60
50
, (mJ/PULSE)
rr
, E
off
40
, E
on
30
20
10
SWITCHING LOSS, E
0
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 600V
V
= ±15V
GE
R
= 5.1Ω
G
T
= 150°C
j
Inductive Load
E
on
E
off
E
rr
0 50 100 150
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
VCC = 600V
V
= ±15V
GE
I
= 150A
C
T
= 125°C
j
Inductive Load
0 10 20 40 5030 60
GATE RESISTANCE, RG, (Ω)
E
on
E
off
E
rr
507/11 Rev. 2
Loading...