C&H Technology CM150TU-12H User Manual

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CM150TU-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A B
C
D
Measured
5 - M5 NUTS
TC
Point
P
GuP
EuP
GuP
EuP
EE
GvP
EvP
U
G
EE
F
GwP
EwP
v
u
H
J
GvP
EvP
V
G EHHS
GuN EuN
w
H
J
GvN EvN
E
GwP EwP
N
W
T
C
Measured Point
GwN EwN
0.110 - 0.5 Tab
P
Q
R 4 - Mounting Holes
K
L
M
K
Six IGBTMOD™ U-Series Module
150 Amperes/ 600 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse­connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
Low Drive PowerLow VDiscrete Super-Fast Recovery
Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode Heat Sinking
GuN EuN
N
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0 B 3.54±0.01 90.0±0.25 C 4.02 102.0 D 3.15±0.01 80.0±0.25 E 0.43 11.0 F 0.91 23.0 G 0.47 12.0 H 0.85 21.7
J 0.91 23.0
GvN
EvN
GwN
EwN
Dimensions Inches Millimeters
K 0.15 3.75 L 0.67 17.0 M 1.91 48.5 N 0.03 0.8 P 0.32 8.1 Q 1.02 26.0 R 0.22 Dia. 5.5 Dia. S 0.57 14.4
Applications:
AC Motor ControlMotion/Servo ControlUPSWelding Power SuppliesLaser Power Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM150TU-12H is a 600V (V
), 150 Ampere Six-
CES
IGBT IGBTMOD™ Power Module.
Type Amperes Volts (x 50)
Current Rating V
CM 150 12
CES
85
85
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150TU-12H Six IGBTMOD™ U-Series Module
150 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM150TU-12H Units
Junction Temperature T Storage Temperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage (C-E SHORT) V Collector Current (Tc = 25°C) I Peak Collector Current (Tj 150°C) I Emitter Current** I Peak Emitter Current** I Maximum Collector Dissipation (Tj < 150°C) P
j
stg CES GES
C
CM
E
EM
c
Mounting Torque, M5 Main Ter minal 31 in-lb Mounting Torque, M5 Mounting 31 in-lb Weight 680 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C 600 Volts ±20 Volts 150 Amperes
300* Amperes
150 Amperes
300* Amperes
600 Watts
2500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I Gate Leakage Voltage I Gate-Emitter Threshold Voltage V Collector-Emitter Saturation Voltage V
CES GES
GE(th)
CE(sat)
VCE = V VGE = V
, VGE = 0V 1 mA
CES
, VCE = 0V 0.5 µA
GES
IC = 15mA, VCE = 10V 4.5 6 7.5 Volts
IC = 150A, VGE = 15V, Tj = 25°C 2.4 3.0 Volts
IC = 150A, VGE = 15V, Tj = 125°C 2.6 Volts Total Gate Charge Q Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 300V, IC = 150A, VGE = 15V 300 nC
IE = 150A, VGE = 0V 2.6 Volts
rating.
j(max)
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Resistive Turn-on Delay Time t
d(on)
Load Rise Time t Switch Turn-off Delay Time t
d(off)
Times Fall Time t Diode Reverse Recovery Time t Diode Reverse Recovery Charge Q
ies oes res
r
f
rr
rr
VCE = 10V, VGE = 0V 7.2 nf
VCC = 300V, IC = 150A, 100 ns
V
= V
GE1
= 15V, 350 ns
GE2
RG = 4.2V, Resistive 300 ns
Load Switching Operation 300 ns IE = 150A, diE/dt = -300A/µs––160ns IE = 150A, diE/dt = -300A/µs 0.36 µC
13.2 nf
––2nf
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R Thermal Resistance, Junction to Case R Contact Thermal Resistance R
86
86
Q Per IGBT 1/6 Module 0.21 °C/W
th(j-c)
D Per Free-Wheel Diode 1/6 Module 0.47 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied 0.015 °C/W
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150TU-12H Six IGBTMOD™ U-Series Module
150 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
300
240
, (AMPERES)
C
180
Tj = 25
VGE= 20V
o
C
15
14
13
12
11
120
60
COLLECTOR CURRENT, I
0
0246810
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SATURATION VOLTAGE CHARACTERISTICS
10
8
, (VOLTS)
CE(sat)
6
COLLECTOR-EMITTER
(TYPICAL)
Tj = 25°C
10
9 8
IC = 300A
IC = 150A
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
4
10
3
10
2
10
SWITCHING TIME, (ns)
1
10
0
10
COLLECTOR CURRENT, IC, (AMPERES)
t
d(on)
(TYPICAL)
t
r
IC = 60A
t
f
t
d(off)
VCC = 300V V
= ±15V
GE
R
= 4.2
G
= 125°C
T
j
1
10
SATURATION VOLTAGE CHARACTERISTICS
5
)
4
, (VOLTS
CE(sat)
3
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
2
10
, (nF)
res
1
, C
10
oes
, C
ies
0
10
CAPACITANCE, C
-1
10
10
20
16
, (AMPERES)
, (VOLTS)
rr
GE
12
8
4
GATE-EMITTER VOLTAGE, V
REVERSE RECOVERY CURRENT, I
0
300
240
, (AMPERES)
C
180
TRANSFER CHARACTERISTICS
VCE = 10V
= 25°C
T
j
T
= 125°C
j
(TYPICAL)
120
60
COLLECTOR CURRENT, I
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
, (AMPERES)
E
2
10
EMITTER CURRENT, I
0
10
0.6 1.0 1.4 1.8 2.62.2 3.0
EMITTER-COLLECTOR VOLTAGE, V
REVERSE RECOVERY CHARACTERISTICS
3
10
di/dt = -300A/µsec T
= 25°C
j
, (ns)
rr
2
10
REVERSE RECOVERY TIME, t
1
2
10
10
1
10
(TYPICAL)
, (VOLTS)
EC
(TYPICAL)
t
rr
I
rr
2
EMITTER CURRENT, IE, (AMPERES)
10
2
10
1
10
0
10
3
10
COLLECTOR-EMITTER
(TYPICAL)
VGE = 15V
Tj = 25°C
= 125°C
T
j
0 60 120 180 240
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
VGE = 0V f = 1MHz
-1 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
10
GATE CHARGE, V
CE
1
10
GE
IC = 150A
VCC = 200V
VCC = 300V
0 100 200
GATE CHARGE, QG, (nC)
300 400
300
C
ies
C
oes
C
res
2
10
87
87
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150TU-12H Six IGBTMOD™ U-Series Module
150 Amperes/600 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
-3
10
1
th(j-c)
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
(IGBT)
-2
10
-1
10
th(j-c)
-5
10
TIME, (s)
0
10
= 0.21°C/W
-4
10
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1
10
-1
10
-2
10
-3
10
-3
10
-3
10
1
th(j-c)
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
(FWDi)
-2
10
-1
10
th(j-c)
-5
10
TIME, (s)
10
= 0.47°C/W
-4
10
0
1
10
-1
10
-2
10
-3
10
-3
10
88
88
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