C&H Technology CM150TU-12F User Manual

6121 Baker Road, Suite 108 Minnetonka, MN 55345
www.chtechnology.com
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
CM150TU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
S - NUTS (5 TYP)
T
MEASURING
C
POINT
W - THICK x X - WIDE
GUP
EB
TAB (12 PLACES)
C
P
GUP
RTC
EUP
U
GUN
RTC RTC
EUN
N
J
K
CM
EUP
N
L
GUN
LL
GVP
GVN
P
N
GVP
EVPLGWP
NL
GVN EVN EWN
EUN
U
V
J
NN
D A
RTC
EVP
V
EVN
K
R
EWP
GWN
W
J
GWP
EWP
GWN
EWN
M
L
RTC
W
RTC
T (4 TYP.)
P
Q
TC MEASURING POINT
V
W - THICK x X - WIDE TAB (12 PLACES)
H
G
F
A
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0 B 4.02 102.0 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 D 3.54±0.01 90.0±0.25 E 3.15±0.01 80.0±0.25 F 0.16 4.0 G 1.02 26.0 H 0.31 8.1
J 0.91 23.0
K 0.47 12.0
Dimensions Inches Millimeters
M 0.57 14.4 N 0.85 21.7
P 0.67 17.0 Q 1.91 48.5 R 0.15 3.75
SM5 M5
T 0.22 Dia. 5.5 Dia.
V 0.03 0.8 W 0.02 0.5
X 0.110 2.79
L 0.43 11.0
Trench Gate Design Six IGBTMOD™
150 Amperes/ 600 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse­connected super-fast recover y free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
Low Drive PowerLow VDiscrete Super-Fast Recovery
Isolated Baseplate for Easy
Applications:
AC Motor ControlUPSBattery Powered Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM150TU-12F is a 600V (V IGBT IGBTMOD™ Power Module.
Type Amperes Volts (x 50)
CM 150 12
CE(sat)
Free-Wheel Diode Heat Sinking
), 150 Ampere Six-
CES
Current Rating V
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150TU-12F Trench Gate Design Six IGBTMOD
150 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM150TU-12F Units
Ratings Symbol CM150TU-12F Units
Ratings Symbol CM150TU-12F Units
Junction Temperature T
Junction Temperature T
Junction Temperature T Storage Temperature T
Storage Temperature T
Storage Temperature T Collector-Emitter Voltage (G-E SHORT) V
Collector-Emitter Voltage (G-E SHORT) V
Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage (C-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V Collector Current (Tc = 25°C) I
Collector Current (Tc = 25°C) I
Collector Current (Tc = 25°C) I Peak Collector Current (Tj 150°C) I
Peak Collector Current (Tj 150°C) I
Peak Collector Current (Tj 150°C) I Emitter Current** I
Emitter Current** I
Emitter Current** I Peak Emitter Current** I
Peak Emitter Current** I
Peak Emitter Current** I Maximum Collector Dissipation (Tj < 150°C) P
Maximum Collector Dissipation (Tj < 150°C) P
Maximum Collector Dissipation (Tj < 150°C) P Mounting Torque, M5 Main Terminal 31 in-lb
Mounting Torque, M5 Main Terminal 31 in-lb
Mounting Torque, M5 Main Terminal 31 in-lb Mounting Torque, M5 Mounting 31 in-lb
Mounting Torque, M5 Mounting 31 in-lb
Mounting Torque, M5 Mounting 31 in-lb Weight 680 Grams
Weight 680 Grams
Weight 680 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
j
j
j
stg
stg
stg
CES
CES
CES GES
GES
GES
C
C
C
CM
CM
CM
E
E
E
EM
EM
EM
c
c
c
iso
iso
iso
-40 to 150 °C
-40 to 150 °C
-40 to 150 °C
-40 to 125 °C
-40 to 125 °C
-40 to 125 °C 600 Volts
600 Volts
600 Volts
±20 Volts
±20 Volts
±20 Volts
150 Amperes
150 Amperes
150 Amperes
300* Amperes
300* Amperes
300* Amperes
150 Amperes
150 Amperes
150 Amperes
300* Amperes
300* Amperes
300* Amperes
520 Watts
520 Watts
520 Watts
2500 Volts
2500 Volts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Collector-Cutoff Current I
Collector-Cutoff Current I Gate Leakage Voltage I
Gate Leakage Voltage I
Gate Leakage Voltage I Gate-Emitter Threshold Voltage V
Gate-Emitter Threshold Voltage V
Gate-Emitter Threshold Voltage V Collector-Emitter Saturation Voltage V
Collector-Emitter Saturation Voltage V
Collector-Emitter Saturation Voltage V
Total Gate Charge Q
Total Gate Charge Q
Total Gate Charge Q Emitter-Collector Voltage** V
Emitter-Collector Voltage** V
Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES
CES
CES GES
GES
GES
GE(th)
GE(th)
GE(th)
CE(sat)
CE(sat)
CE(sat)
G
G
G
EC
EC
EC
VCE = V
VCE = V
VCE = V VGE = V
VGE = V
VGE = V
IC = 15mA, VCE = 10V 5 6 7 Volts
IC = 15mA, VCE = 10V 5 6 7 Volts
IC = 15mA, VCE = 10V 5 6 7 Volts
IC = 150A, VGE = 15V, Tj = 25°C 1.6 2.2 Volts
IC = 150A, VGE = 15V, Tj = 25°C 1.6 2.2 Volts
IC = 150A, VGE = 15V, Tj = 25°C 1.6 2.2 Volts
IC = 150A, VGE = 15V, Tj = 125°C 1.6 Volts
IC = 150A, VGE = 15V, Tj = 125°C 1.6 Volts
IC = 150A, VGE = 15V, Tj = 125°C 1.6 Volts
VCC = 300V, IC = 150A, VGE = 15V 930 nC
VCC = 300V, IC = 150A, VGE = 15V 930 nC
VCC = 300V, IC = 150A, VGE = 15V 930 nC
IE = 150A, VGE = 0V ––2.6 Volts
IE = 150A, VGE = 0V ––2.6 Volts
IE = 150A, VGE = 0V ––2.6 Volts
, VGE = 0V ––1mA
, VGE = 0V ––1mA
, VGE = 0V ––1mA
CES
CES
CES
, VCE = 0V ––20 µA
, VCE = 0V ––20 µA
, VCE = 0V ––20 µA
CES
CES
CES
rating.
j(max)
2
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150TU-12F Trench Gate Design Six IGBTMOD
150 Amperes/600 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Inductive Turn-on Delay Time t Load Rise Time t Switch Turn-off Delay Time t Times Fall Time t Diode Reverse Recovery Time** t Diode Reverse Recovery Charge** Q
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V ––2.7 nf
VCC = 300V, IC = 150A, ––120 ns
V
= V
GE1
= 15V, ––100 ns
GE2
RG = 4.2⍀, ––350 ns
Inductive Load ––250 ns
Switching Operation ––150 ns
IE = 150A 2.8 µC
––41 nf
––1.5 nf
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Q Per IGBT 1/6 Module, Tc Reference 0.24 °C/W
th(j-c)
Point per Outline Drawing
D Per FWDi 1/6 Module, Tc Reference ––0.47 °C/W
th(j-c)
Point per Outline Drawing
'Q Per IGBT 1/6 Module, 0.16 °C/W
th(j-c)
Tc Reference Point Under Chip
th(c-f)
Per Module, Thermal Grease Applied 0.015 °C/W
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150TU-12F Trench Gate Design Six IGBTMOD
150 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
300
Tj = 25
240
, (AMPERES)
C
180
120
60
COLLECTOR CURRENT, I
0
01 2 34
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FORWARD CHARACTERISTICS
3
10
11
o
C
15
VGE = 20V
8
7.5
FREE-WHEEL DIODE
(TYPICAL)
10
9.5
9
8.5
Tj = 25°C
2
10
, (AMPERES)
E
1
10
EMITTER CURRENT, I
0
10
0 1.0 2.0 3.0 4.0
EMITTER-COLLECTOR VOLTAGE, V
REVERSE RECOVERY CHARACTERISTICS
2
10
I
rr
, (ns)
REVERSE RECOVERY TIME, t
t
rr
rr
1
10
0
10
1
10
(TYPICAL)
2
EMITTER CURRENT, IE, (AMPERES)
10
, (VOLTS)
EC
VCC = 300V V
= ±15V
GE
R
= 4.2
G
T
= 25°C
j
Inductive Load
SATURATION VOLTAGE CHARACTERISTICS
SATURATION VOLTAGE CHARACTERISTICS
3
3
)
)
, (VOLTS
, (VOLTS
2
2
CE(sat)
CE(sat)
1
1
COLLECTOR-EMITTER
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
SATURATION VOLTAGE, V
0
0
2
10
, (nF)
res
1
, C
10
oes
, C
ies
0
10
CAPACITANCE, C
-1
10
10
2
10
20
16
, (AMPERES)
, (VOLTS)
rr
GE
12
1
10
8
4
GATE-EMITTER VOLTAGE, V
0
REVERSE RECOVERY CURRENT, I
10
3
10
0
COLLECTOR-EMITTER
COLLECTOR-EMITTER
(TYPICAL)
(TYPICAL)
VGE = 15V
VGE = 15V
Tj = 25°C
Tj = 25°C
= 125°C
= 125°C
T
T
j
j
0 60 120 180 240
0 60 120 180 240
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
CE
C
ies
C
oes
C
res
VGE = 0V
-1 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
10
GATE CHARGE, V
1
10
GE
IC = 150A
VCC = 200V
VCC = 300V
200 400 600 800
0
GATE CHARGE, QG, (nC)
1000 1200
300
300
10
1400
SATURATION VOLTAGE CHARACTERISTICS
5
4
, (VOLTS)
CE(sat)
3
COLLECTOR-EMITTER
(TYPICAL)
Tj = 25°C
IC = 300A
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
06 1081412 1816 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING CHARACTERISTICS
3
10
2
10
1
10
SWITCHING TIME, (ns)
0
10
2
0
10
COLLECTOR CURRENT, IC, (AMPERES)
IMPEDANCE CHARACTERISTICS
10-310
1
th(j-c)
10
Per Unit Base R
th(j-c)
R
th(j-c)
0
10
Single Pulse T
= 25°C
C
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
IC = 150A
IC = 60A
HALF-BRIDGE
(TYPICAL)
t
d(off)
t
f
t
d(on)
t
r
1
10
TRANSIENT THERMAL
(IGBT & FWDi)
-2
= 0.24°C/W (IGBT) = 0.47°C/W (FWDi)
TIME, (s)
-1
10
-5
10
VCC = 300V V
= ±15V
GE
R
= 4.2
G
T
= 125°C
j
Inductive Load
2
10
0
10
-4
10
3
10
1
10
-1
10
-2
10
-3
10
-3
10
4
4
Loading...