C&H Technology CM150TL-24NF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM150TL-24NF

Q (4 PLACES)

V (6 PLACES)

C

B

E

N

E

A

D

H H

FE E

8

1

1 1 1

CN

G

G

G

X

X

W

P

Z

J

L

G

T

U

AA

K

R

S S K

G G M

K

P

B

NC

NC

NC

UP-1

UP-2

CN-5

CN-6

CN-3

CN-4

CN-1

CN-2

VP-1

VP-2

WP-1

WP-2

U V W

CN-7

CN-8

N

8

WP VP UP

CN

Y

AB

B

N

P

W V U

AC

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.32 135.0

B 4.33 110.0

C 3.07±0.02 78.0±0.5

D 4.33±0.02 110.0±0.5

E 0.24 6.05

F 0.69 17.5

G 0.41 10.5

H 1.02 26.0

J 1.92 48.75

K 0.51 13.0

L 0.71 18.0

M 0.46 11.7

Housing Types (J.S.T. Mfg. Co. Ltd.)

AB – B8P-VH-FB-B
AC – B2P-VH-FB-B

Six IGBTMOD™
NF-Series Module

150 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration,
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Dimensions Inches Millimeters

N 0.74 18.7

P 0.54 13.75
Q 0.22 5.5 Dia.

R 1.20 30.5

S 0.98 25.0

T 1.82 46.3

U 0.43 11.0

V M5 M5

W 0.65 16.5

X 0.78 20.0

Y 1.04 26.5

Z 0.16 4.0
AA 0.95+0.04/-0.0 24.1+1.0/-0.0

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM150TL-24NF is a 1200V
(V

), 150 Ampere

CES

Six-IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 150 24

V

CES

101/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM150TL-24NF
Six IGBTMOD™ NF-Series Module

150 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM150TL-24NF Units

Power Device Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (DC, TC = 76°C)*4 I

Peak Collector Current (Pulse, Repetitive)*2 I

Emitter Current (DC, TC = 25°C)*4 I

Peak Emitter Current (Pulse, Repetitive)*2 I

Maximum Collector Dissipation (TC = 25°C)*2,*4 P

-40 to 125 °C

stg

1200 Volts

CES

±20 Volts

GES

150 Amperes

C

300 Amperes

CM

*1 150 Amperes

E

*1 300 Amperes

EM

890 Watts

C

Mounting Torque, M5 Mounting Screws — 31 in-lb

Mounting Torque, M5 Main Terminal Screws — 31 in-lb

Module Weight (Typical) — 750 Grams

Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V

2500 Volts

ISO

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

V

CES

I

GE(th)

±VGE = V

GES

IC = 150A, VGE = 15V, Tj = 25°C*3 — 2.1 3.0 Volts

CE(sat)

= V

CE

= 15mA, VCE = 10V 6 7 8 Volts

C

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

IC = 150A, VGE = 15V, Tj = 125°C*3 — 2.4 — Volts

Forward Transfer Admittance |yfs| IC = 150A, VCE = 10V*

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG V

Inductive Turn-on Delay Time t

Load Turn-on Rise Time tr V

Switch Turn-off Delay Time t

Time Turn-off Fall Time tf R

Reverse Recovery Time*1 t

— — 23.0 nf

ies

V

oes

— — 0.45 nf

res

CC

— — 130 ns

d(on)

V

d(off)

Inductive Load Switching Operation — — 150 ns

rr

= 10V, VGE = 0V — — 2.0 nf

CE

= 600V, IC = 150A, VGE = 15V — 675 — nC

= 600V, IC = 150A, — — 70 ns

CC

= V

GE1

= 2.1Ω, IE = 150A, — — 350 ns

G

= 15V, — — 400 ns

GE2

3

45 — — sec

Reverse Recovery Charge*1 Qrr — 5.8 — µC

Emitter-Collector Voltage*1 V

*1 IE, IEM, VEC, trr, and Qrr represent characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 TC measured point is just under the chips.

I

EC

= 150A, VGE = 0V — — 3.8 Volts

E

j(max)

rating.

2 01/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

2

10

1

10

0

10

-1

10

1

0 1 3 42 5

10

1

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

6 8 10 1412 16 18 20

8

6

4

2

0

Tj = 25°C

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 300A

IC = 150A

IC = 60A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 2 4 6 8 10

0

VGE = 20V

10

11

12

13

15

9

Tj = 25°C

300

100

200

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

4

3

0

2

1

0

300100 200

VGE = 15V

Tj = 25°C
T

j

= 125°C

10

-1

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

0

10

1

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= ±15V

R

G

= 2.1Ω

T

j

= 125°C

Inductive Load

t

f

10

3

CM150TL-24NF
Six IGBTMOD™ NF-Series Module

150 Amperes/1200 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case* R

Thermal Resistance, Junction to Case* R

Contact Thermal Resistance R

External Gate Resistance RG 2.1 — 31 Ω

*4 TC, Tf measured point is just under the chips.

Q Per IGBT 1/6 Module*4 — — 0.14 °C/W

th(j-c)

D Per FWDi 1/6 Module*4 — — 0.23 °C/W

th(j-c)

Per 1/6 Module, Thermal Grease Applied*4 — 0.051 — °C/W

th(c-f)

301/10 rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

8

4

0

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25°C
Per Unit Base =
R

th(j-c)

=

0.14°C/W
(IGBT)
R

th(j-c)

=

0.23°C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

0

10

1

10

1

10

0

VCC = 600V
V

GE

= ±15V

I

C

= 150A

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

2

SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

E

SW(on)

E

SW(off)

GATE RESISTANCE, R

G

, (Ω)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

0

10

1

10

1

10

0

VCC = 600V
V

GE

= ±15V

I

E

= 150A

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

2

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

VCC = 600V
V

GE

= ±15V

R

G

= 2.1Ω

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

3

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(TYPICAL)

E

rr

E

rr

GATE CHARGE, Q

G

, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

20

0

16

12

200 400 600 1000800

VCC = 600V

VCC = 400V

IC = 150A

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

2

10

1

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

10

3

VCC = 600V
V

GE

= ±15V

R

G

= 2.1Ω

T

j

= 25°C

Inductive Load

I

rr

t

rr

COLLECTOR CURRENT, I

C

, (AMPERES)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

VCC = 600V
V

GE

= ±15V

R

G

= 2.1Ω

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

3

SWITCHING LOSS VS.

COLLECTOR CURRENT

(TYPICAL)

E

SW(on)

E

SW(off)

CM150TL-24NF
Six IGBTMOD™ NF-Series Module

150 Amperes/1200 Volts

4 01/10 Rev. 1