C&H Technology CM150TF-12H User Manual

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Suite 108
Minnetonka, MN 55345

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1-800-274-4284

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Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

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Phone – 1-800-274-4284

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM150TF-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

B

Z - M5 THD
(7 TYP.)

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Y - DIA.

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(4 TYP.)

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BwP
EwP

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.110 TAB

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N

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.21 107.0
B 4.02 102.0
C 3.543±0.01 90.0±0.25
D 3.15±0.01 80.0±0.25
E1.57 40.0
F 1.38 35.0
G 1.28 32.5
H 1.26 Max. 32.0 Max

J 1.18 30.0
K 0.98 25.0
L 0.96 24.5
M 0.79 20.0

Dimensions Inches Millimeters

P 0.57 14.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.30 7.5

W 0.24 Rad. Rad. 6.0

X 0.24 6.0
Y 0.22 5.5
Z M5 Metric M5

AA 0.08 2.0

N 0.67 17.0

Six-IGBT IGBTMOD™
H-Series Module

150 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules are
designed for use in switching appli­cations. Each module consists of
six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies

□ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM150TF-12H
is a 600V (V
Six-IGBT IGBTMOD™ Power
Module.

Type Current Rating V

CM 150 12

CE(sat)

(70ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking

), 150 Ampere

CES

Amperes Volts (x 50)

CES

319

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150TF-12H
Six-IGBT IGBTMOD™ H-Series Module

150 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM150TF-12H Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (T ypical) – 830 Grams
V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

RMS

–40 to 150 °C
–40 to 125 °C

600 Volts
±20 Volts
150 Amperes

300* Amperes

150 Amperes

200* Amperes

600 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5

GES

µ

IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 150A, VGE = 15V – 2.1 2.8** V olts

A

IC = 150A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Diode Forward Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

FM

VCC = 300V, IC = 150A, VGS = 15V – 450 – nC

IE = 150A, VGE = 0V – – 2.8 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies

oes

res

rr

VGE = 0V, VCE = 10V, 1MHz – – 5.3 nF

r

f

VCC = 300V, IC = 150A, – – 550 ns

V

= V

GE1

= 15V, RG = 4.2Ω – – 300 ns

GE2

IE = 150A, diE/dt = –300A/µs––110ns

rr

IE = 150A, diE/dt = –300A/µs – 0.41 –

–– 15nF

– – 3 nF
– – 200 ns

– – 300 ns

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.025 °C/W

Per IGBT – – 0.21 °C/W
Per FWDi – – 0.47 °C/W

320

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150TF-12H
Six-IGBT IGBTMOD™ H-Series Module

150 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

300

250

200

, (AMPERES)

C

Tj = 25oC

VGE = 20V

15

12

11

150

100

10

50

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

9

7

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 300A

IC = 150A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

(TYPICAL)

IC = 60A

TRANSFER CHARACTERISTICS

(TYPICAL)

300

VCE = 10V

250

200

, (AMPERES)

C

Tj = 25°C
T

= 125°C

j

150

100

50

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

(TYPICAL)

(TYPICAL)

2

10

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

5

VGE = 15V

Tj = 25°C

= 125°C

4

, (VOLTS)

CE(sat)

3

T

j

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 50 100 150 200 300

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

2

10

, (nF)

res

1

10

, C

oes

, C

ies

0

10

CAPACITANCE, C

VGE = 0V
f = 1MHz

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

(TYPICAL)

0

10

GATE CHARGE, V

10

20

250

CE

C

ies

C

oes

C

res

1

GE

2

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

, (ns)

t

f

t

d(off)

t

d(on)

t

r

VCC = 300V

= ±15V

V

GE

R

= 4.2Ω

G

= 125°C

T

j

2

10

10

rr

2

10

REVERSE RECOVERY TIME, t

1

10

3

di/dt = -300A/µsec
Tj = 25°C

1

10

EMITTER CURRENT, IE, (AMPERES)

I

rr

t

rr

10

10

2

10

3

10

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

8

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

0

0

0 100 200 300 400 500

VCC = 200V

VCC = 300V

GATE CHARGE, QG, (nC)

600

321

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150TF-12H
Six-IGBT IGBTMOD™ H-Series Module

150 Amperes/600 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.21°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.47°C/W

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

322