C&H Technology CM150DX-24A User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

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Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM150DX-24A

G2(38)

E1C2(24) E1C2(23)

Tr2

Di2

Di1

Tr1

E2(39)

E2

(47)C1(48)

Th

TH1

(1)

TH2

(2)

G1(15)

C1(22)
E1(16)

NTC

DETAIL "B"

A

D

E

FJ J

AR

ZAAAB

B

AH

AJ

AX

AW

AL

AM

AK

AE

AD

AS

AN

AQ

AF

AG

AT

AU

AV

AP

G

H

P

C

X

T

T

S

S

Q

R

Q

N

V

U

U

W

AC (4 PLACES)

M

KKL

L

Y
(4 PLACES)

DETAIL "A"

DETAIL "B"

DETAIL "A"

12345678910111213141516171819202122

23

24

48

47

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBTMOD™
NX-Series Module

150 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0
B 2.44 62.0
C 0.67 17.0
D 5.39 137.0
E 4.79 121.7
F 4.33±0.02 110.0±0.5
G 3.89 99.0
H 3.72 94.5
J 0.53 13.5
K 0.15 3.8
L 0.28 7.25
M 0.30 7.75
N 1.95 49.54
P 0.9 22.86
Q 0.55 14.0
R 0.87 22.0
S 0.67 17.0
T 0.48 12.0
U 0.24 6.0
V 0.16 4.2
W 0.37 6.5
X 0.83 21.14
Y M6 M6

Dimensions Inches Millimeters

Z 1.53 39.0
AA 1.97±0.02 50.0±0.5
AB 2.26 57.5
AC 0.22 Dia. 5.5 Dia.
AD 0.67+0.04/-0.02 17.0+1.0/-0.5
AE 0.51 13.0
AF 0.27 7.0
AG 0.03 0.8
AH 0.81 20.5
AJ 0.12 3.0
AK 0.14 3.5
AL 0.21 5.4
AM 0.49 12.5
AN 0.15 3.81
AP 0.05 1.15
AQ 0.025 0.65
AR 0.29 7.4
AS 0.24 6.2
AT 0.17 Dia. 4.3 Dia.
AU 0.10 Dia. 2.5 Dia.
AV 0.08 Dia. 2.1 Dia.
AW 0.06 1.5
AX 0.49 12.5

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM150DX-24A is a 1200V (V

CES

150 Ampere Dual IGBTMOD™
Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 150 24

V

CES

),

1Rev. 3/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

23

24

48

47

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

0

0

0

Dimensions in mm (Tolerance: ±1mm)

IGBT FWDi NTC Thermistor

Chip Location (Top View)

0

21.2

32.6

31.3

73.5

21.2

42.5

73.5

43.8

34.2

36.2

Th

HEATSINK SIDE

– : CONCAVE

+ : CONVEX

– : CONCAVE

X

Y

+ : CONVEX

HEATSINK SIDE

CM150DX-24A
Dual IGBTMOD™ NX-Series Module

150 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM150DX-24A Units

Power Device Junction Temperature Tj -40 to 150 °C

Storage Temperature T

-40 to 125 °C

stg

Mounting Torque, M5 Mounting Screws — 31 in-lb

Mounting Torque, M6 Main Terminal Screws — 40 in-lb

Module Weight (Typical) — 330 Grams

Baseplate Flatness, On Centerline X, Y (See Below) — ±0 ~ +100 µm

Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V

2500 Volts

ISO

Inverter Sector

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (TC = 91°C)*1 I

Peak Collector Current (Pulse)*3 I

Emitter Current (TC = 25°C)

*1*4

I

Peak Emitter Current (Pulse)*3 I

Maximum Collector Dissipation (TC = 25°C)

*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*4 Junction temperature (Tj) should not increase beyond T

*1*4

P

rating.

j(max)

1200 Volts

CES

±20 Volts

GES

150 Amperes

C

300 Amperes

CM

*2

150 Amperes

E

*2

300 Amperes

EM

960 Watts

C

rating.

j(max)

MEASUREMENT POINT

CHIP LOCATION (TOP VIEW)BASEPLATE FLATNESS

2 Rev. 3/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM150DX-24A
Dual IGBTMOD™ NX-Series Module

150 Amperes/1200 Volts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Inverter Sector

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

I

V

CES

I

GE(th)

V

GES

IC = 150A, VGE = 15V, Tj = 25°C*5 — 2.0 2.6 Volts

CE(sat)

C

= V

CE

= 15mA, VCE = 10V 6 7 8 Volts

C

GE

, VGE = 0V — — 1.0 mA

CES

= V

, VCE = 0V — — 0.5 µA

GES

= 150A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts

IC = 150A, VGE = 15V, Chip — 1.9 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG V

Inductive Turn-on Delay Time t

Load Turn-on Rise Time tr V

Switch Turn-off Delay Time t

Time Turn-off Fall Time tf R

Reverse Recovery Time t

— — 23.0 nF

ies

V

oes

— — 0.45 nF

res

CC

— — 130 ns

d(on)

V

d(off)

*2

Inductive Load Switching Operation — — 150 ns

rr

= 10V, VGE = 0V — — 2.0 nF

CE

= 600V, IC = 150A, VGE = 15V — 675 — nC

= 600V, IC = 150A, — — 100 ns

CC

= ±15V, — — 450 ns

GE

= 2.2Ω, IE = 150A, — — 600 ns

G

Reverse Recovery Charge Qrr*2 — 6 — µC

Emitter-Collector Voltage V

I

I

*2

I

EC

E

= 150A, VGE = 0V, Tj = 25°C*5 — 2.6 3.4 Volts

E

= 150A, VGE = 0V, Tj = 125°C*5 — 2.16 — Volts

= 150A, VGE = 0V, Chip — 2.5 — Volts

E

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Module Lead Resistance R

Thermal Resistance, Junction to Case** R

Thermal Resistance, Junction to Case** R

Contact Thermal Resistance** R

Thermal Grease Applied

Internal Gate Resistance R

Main Termnals-Chip (Per Switch) — 1.6 — mΩ

lead

Q Per IGBT*1 — — 0.13 °C/W

th(j-c)

D Per FWDi*1 — — 0.23 °C/W

th(j-c)

Case to Heatsink (Per 1 Module) — 0.015 — °C/W

th(c-f)

*1*7

T

Gint

= 25°C — 0 — Ω

C

External Gate Resistance RG 2 — 21 Ω

NTC Thermistor Sector, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance RTH T

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

B = (InR1 – InR2) / (1/T1 – 1/T2)*6 — 3375 — K

(25/50)

Power Dissipation P25 T

**Thermal resistance values are per 1 element.
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = T(°C) + 273.15
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

= 25°C*1 4.85 5.00 5.15 kΩ

C

= 493Ω*1 –7.3 — +7.8 %

100

= 25°C*1 — — 10 mW

C

3Rev. 3/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(INVERTER PART - TYPICAL)

10

0

10

2

10

2

10

1

10

-1

10

0

10

1

0 1 32 4

10

1

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

6 8 10 1412 16 18 20

8

6

4

2

0

Tj = 25°C

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 300A

IC = 150A

IC = 60A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)

0 2 4 6 8 10

0

VGE = 20V

10

11

12

13

15

9

Tj = 25°C

300

100

50

200

150

250

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(INVERTER PART - TYPICAL)

4

3

0

2

1

0

30025020050 100 150

VGE = 15V

Tj = 25°C
T

j

= 125°C

10

-1

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

0

10

1

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(INVERTER PART - TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= ±15V

R

G

= 2.2Ω

T

j

= 125°C

Inductive Load

t

f

10

3

GATE RESISTANCE, R

G

, (Ω)

10

3

10

0

10

1

10

2

10

0

10

1

SWITCHING TIME, (ns)

SWITCHING TIME VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= ±15V

I

C

= 150A

T

j

= 125°C

Inductive Load

t

f

10

2

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

(INVERTER PART)

20

0

16

12

8

4

0

250 500 750 1000

VCC = 600V

VCC = 400V

IC = 150A

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

3

10

1

10

2

10

1

10

2

10

0

10

3

VCC = 600V
V

GE

= ±15V

R

G

= 2.2Ω

T

j

= 25°C

Inductive Load

I

rr

t

rr

REVERSE RECOVERY, I

rr

(A), t

rr

(ns)

CM150DX-24A
Dual IGBTMOD™ NX-Series Module

150 Amperes/1200 Volts

4 Rev. 3/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25°C
Per Unit Base =
R

th(j-c)

=

0.13°C/W
(IGBT)
R

th(j-c)

=

0.23°C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

on

, E

off

, (mJ/PULSE)

10

2

10

0

10

1

10

0

10

1

VCC = 600V
V

GE

= ±15V

I

C

= 150A

T

j

= 125°C

Inductive Load

10

2

SWITCHING LOSS VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

E

on

E

off

GATE RESISTANCE, R

G

, (Ω)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

0

10

1

10

0

10

1

VCC = 600V
V

GE

= ±15V

I

E

= 150A

T

j

= 125°C

Inductive Load

10

2

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

VCC = 600V
V

GE

= ±15V

R

G

= 2.2Ω

T

j

= 125°C

Inductive Load

10

3

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(INVERTER PART - TYPICAL)

E

rr

E

rr

VCC = 600V
V

GE

= ±15V

R

G

= 2.2Ω

T

j

= 125°C

Inductive Load

E

on

E

off

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

on

, E

off

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

10

3

SWITCHING LOSS VS.

COLLECTOR CURRENT

(INVERTER PART - TYPICAL)

CM150DX-24A
Dual IGBTMOD™ NX-Series Module

150 Amperes/1200 Volts

5Rev. 3/09