C&H Technology CM150DUS-12F User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

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Please contact the C&H Technology team for the following questions -

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Application

Assembly

Availability

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Phone – 1-800-274-4284

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CM150DUS-12F

Q (2 PLACES)

CM

A

B

S

T T

U U

W

V

D

R

K K

C2E1 E2 C1

#110 TAB x H THICK
(4 PLACES)

X

Y

M

N

E

F

G

F

J

E2G2G1E1

P - NUTS x Z DEEP (3 PLACES)

TC MEASURED

POINT

C

L

C2E1

RTC

RTC

E2

E1

G1

C1

E2

G2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

Trench Gate Design
Dual IGBTMOD™

150 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0

B 1.89 48.0

C 1.18 +0.04/-0.02 30.0 +1.0/-0.5

D 3.15±0.01 80.0±0.25

E 0.43 11.0

F 0.16 4.0

G 0.71 18.0

H 0.02 0.5

J 0.53 13.5

K 0.91 23.0

L 0.83 21.2

M 0.67 17.0

Dimensions Inches Millimeters

N 0.28 7.0

P M5 M5

Q 0.26 Dia. 6.5 Dia.

R 0.02 4.0

S 0.30 7.5

T 0.63 16.0

U 0.10 2.5

V 1.0 25.0

W 0.94 24.0

X 0.51 13.0

Y 0.47 12.0

Z 0.47 12.0

in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

£ Low V
£ Low E

CE(sat)
SW(off)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ Power Supplies
£ Induction Heating
£ Welders

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM150DUS-12F is
a 600V (V

), 150 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 150 12

CES

1

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150DUS-12F
Trench Gate Design Dual IGBTMOD™

150 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol CM150DUS-12F Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E SHORT) V

Gate-Emitter Voltage (C-E SHORT) V

Collector Current (Tc = 25°C) IC 150 Amperes

Peak Collector Current I

Emitter Current** (Tc = 25°C) IE 150 Amperes

Peak Emitter Current** IEM 300* Amperes

Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 520 Watts

Mounting Torque, M5 Main Terminal – 31 in-lb

Mounting Torque, M6 Mounting – 40 in-lb

Weight – 310 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

-40 to 125 °C

stg

600 Volts

CES

±20 Volts

GES

CM

2500 Volts

iso

j(max)

300* Amperes

rating.

Static Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

CES

VGE = V

GES

IC = 15mA, VCE = 10V 5 6 7 Volts

GE(th)

IC = 150A, VGE = 15V, Tj = 25°C 1.7 2.0 2.7 Volts

CE(sat)

VCE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 20 μA

GES

IC = 150A, VGE = 15V, Tj = 125°C – 1.95 – Volts

Total Gate Charge QG VCC = 300V, IC = 150A, VGE = 15V – 930 – nC

Emitter-Collector Voltage** VEC IE = 150A, VGE = 0V – – 2.6 Volts

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Resistive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Times Fall Time tf Load Switching Operation – – 150 ns

Diode Reverse Recovery Time** trr IE = 150A – – 150 ns

Diode Reverse Recovery Charge** Qrr – 2.8 – µC

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

– – 41 nf

ies

VCE = 10V, VGE = 0V – – 2.7 nf

oes

– – 1.5 nf

res

VCC = 300V, IC = 150A, – – 120 ns

d(on)

= V

GE1

RG = 4.2Ω, Inductive – – 350 ns

d(off)

= 15V, – – 100 ns

GE2

2

2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

COLLECTOR-CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

SW

, (mJ/PULSE)

SWITCHING LOSS VS. COLLECTOR CURRENT

(TYPICAL)

10

1

10

2

10

3

10

0

10

-1

10

1

E

SW(on)

E

SW(off)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0

1 2 3

4

150

50

0

VGE = 20V

13

8

8.5

7.5

7

100

250

200

300

9

15

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

3.0

0 5

0 100 150 200 250

2.5

2.0

1.5

1.0

0.5

0

300

VGE = 15V

Tj = 25°C
Tj = 125°C

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

2

10

2

10

1

10

-1

10

0

VGE = 0V
f = 1MHz

C

oes

C

res

C

ies

10

0

10

1

0.50 1.51.0 2.0 2.5 3.0

10

0

10

1

10

2

EMITTER-COLLECTOR VOLTAGE,

VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

EMITTER CURRENT, I

E

, (AMPERES)

Tj = 25°C

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

6 8 10 1412 1816 20

4

3

2

1

0

Tj = 25°C

IC = 60A

IC = 300A

IC = 150A

VCC = 300V
VGE = ±15V
RG = 4.2 Ω
Tj = 125°C
HALF-BRIDGE
SWITCHING

Tj = 25

o

C

9.5

10

11

CM150DUS-12F
Trench Gate Design Dual IGBTMOD™

150 Amperes/600 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Tc Reference Point Under Chip

Contact Thermal Resistance R

External Gate Resistance RG 4.2 – 42 Ω

** If you use this value, R

should be measured just under the chips.

th(f-a)

Q Per IGBT 1/2 Module, Tc Reference – 0.24 °C/W

th(j-c)

D Per FWDi 1/2 Module, Tc Reference – – 0.47 °C/W

th(j-c)

Q Per IGBT 1/2 Module, – – 0.19** °C/W

th(j-c')

Per Module, Thermal Grease Applied – 0.07 – °C/W

th(c-f)

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

( IGBT)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

Single Pulse
TC = 25C
Per Unit Base = R

th(j-c)

= 0.24C/W

Z

th

= R

th

• (NORMALIZED VALUE)

10

-1

10

-2

10

-3

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(FWDi)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

Single Pulse
TC = 25C
Per Unit Base = R

th(j-c)

= 0.47C/W

Z

th

= R

th

• (NORMALIZED VALUE)

10

-1

10

-2

10

-3

t

rr

I

rr

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

1

10

0

t

d(off)

t

d(on)

t

r

VCC = 300V
VGE = 15V
RG = 4.2 Ω
Tj = 125C

t

f

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

10

3

EMITTER CURRENT,

IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

2

10

1

10

2

10

3

10

1

10

0

10

2

10

1

10

0

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE, V

GE

20

0 14001000 1200600 800

16

12

8

4

0

200 400

VCC = 300V

VCC = 200V

IC = 150A

VCC = 300V
VGE = 15V
RG = 4.2 Ω
Tj = 125C

t

rr

I

rr

GATE RESISTANCE, RG, ()

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

1

10

0

10

1

10

0

10

-1

10

2

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

1

10

1

10

2

10

0

10

-1

10

3

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(TYPICAL)

VCC = 300V
VGE = 15V
IC = 150A
Tj = 125°C
Inductive Load
C Snubber at Bus

VCC = 300V
VGE = 15V
RG = 4.3 Ω
Tj = 125°C
Inductive Load
C Snubber at Bus

CM150DUS-12F
Trench Gate Design Dual IGBTMOD™

150 Amperes/600 Volts

4