C&H Technology CM150DU-34KA User Manual

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Suite 108
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CM150DU-34KA

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

TC Measured Point

T - (4 TYP.)

G2
E2
E1

G1

C1

P

K

U

N

R

M

L

C1

H

J

H

G2
E2

E1
G1

F

G

E

B

S - NUTS

(3 TYP)

C

CM

C2E1 E2

K

C2E1

A

D

C

L

Q

Q

K

E2

Dual IGBTMOD™
KA-Series Module

150 Amperes/ 1700 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0

J 0.59 15.0

K 0.55 14.0

Dimensions Inches Millimeters

L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
SM6 M6

T 0.26 Dia. 6.5 Dia.
U 0.02 0.5

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM150DU-34KA is
a 1700V (V

), 150 Ampere

CES

Dual IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 150 34

CES

1

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150DU-34KA
Dual IGBTMOD™ KA-Series Module

150 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM150DU-34KA Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M6 Main Ter minal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1700 Volts

±20 Volts
150 Amperes

300* Amperes

150 Amperes
300* Amperes
1100 Watts

3500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V

VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 15mA, VCE = 10V 4.0 5.5 7.0 Volts

IC = 150A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts

IC = 150A, VGE = 15V, Tj = 125°C– 3.8 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

G

EC

VCC = 1000V, IC = 150A, VGE = 15V – 675 – nC

IE = 150A, VGE = 0V, Tj = 25°C– –4.6 Volts

IE = 150A, VGE = 0V, Tj = 125°C– 2.2 – Volts

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

j(max)

rating.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Turn-off Delay Time t

d(off)

Times Fall Time t
Reverse Recovery Time t
Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 3.6 nf

VCC = 1000V, IC = 150A, – – 450 ns

V

= V

GE1

= 15V, – – 200 ns

GE2

RG = 2.1⍀, Resistive – – 550 ns

Inductive Load – – 800 ns

Switching Operation – – 600 ns

IE = 150A – 7.7 – µC

––21.0 nf

––1.1 nf

2

2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0246810

100

0

VGE = 20V

15

14

12

11

8

Tj = 25oC

50

150

250

300

200

10

9

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

TRANSFER CHARACTERISTICS

(TYPICAL)

048121620

150

250

100

50

0

300

200

VCE = 10V

Tj = 25°C
T

j

= 125°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

6

5

050100 150 250

4

3

2

1

0

VGE = 15V

Tj = 25°C
T

j

= 125°C

200 300

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

048121620

8

6

4

2

0

Tj = 25°C

IC = 60A

IC = 300A

IC = 150A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

0

10

2

10

1

10

0

10

2

10

-1

VGE = 0V
f = 1MHz

10

1

C

ies

C

oes

C

res

10

0

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

1

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

Tj = 25°C

12345

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

CM150DU-34KA
Dual IGBTMOD™ KA-Series Module

150 Amperes/1700 Volts

Thermal and Mechanical Characteristics, T

= 25 °C unless otherwise specified

j

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
Thermal Resistance R

QPer IGBT 1/2 Module – – 0.11 °C/W

th(j-c)

DPer FWDi 1/2 Module – – 0.18 °C/W

th(j-c)

th(c-f)

th(j-c')

Per Module, Thermal Grease Applied – 0.040 – °C/W

QT

Measured Point – – 0.07* °C/W

c

(Under Chips - IGBT Part)

* If you use this value, R

should be measured just under the chips.

th(f-a)

3

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150DU-34KA
Dual IGBTMOD™ KA-Series Module

150 Amperes/1700 Volts

SWITCHING CHARACTERISTICS

4

10

t

f

t

d(off)

3

10

t

d(on)

2

10

SWITCHING TIME, (ns)

t

r

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

HALF-BRIDGE

(TYPICAL)

VCC = 1000V
V
R
T
Inductive Load

2

10

TRANSIENT THERMAL

(IGBT)

-2

10

10

th(j-c)

-1

= 0.11°C/W

= ±15V

GE

= 2.1 Ω

G

= 125°C

j

0

10

REVERSE RECOVERY CHARACTERISTICS

3

10

VCC = 1000V
V

GE

R

= 2.1 Ω

rr

10

G

T

= 25°C

j

Inductive Load

2

, (ns)

= ±15V

(TYPICAL)

t

rr

I

rr

10

10

3

, (AMPERES)

2

rr

20

16

, (VOLTS)

GE

12

IC = 150A

GATE CHARGE, V

VCC = 800V

GE

VCC = 1000V

8

REVERSE RECOVERY TIME, t

1

3

10

1

10

10

10

10

1

th(j-c)

10

0

10

-1

-1

10

• (NORMALIZED VALUE)

th

-2

-2

10

= R

th

Z

1

10

EMITTER CURRENT, IE, (AMPERES)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

-2

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

10

(FWDi)

10

th(j-c)

2

-1

0

10

= 0.18°C/W

10

3

10

1

10

10

10

4

GATE-EMITTER VOLTAGE, V

1

REVERSE RECOVERY CURRENT, I

0

0 200 400

-1

-2

GATE CHARGE, QG, (nC)

600

800 1000

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-4

10

-3

10

-3

10

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-4

10

-3

10

-3

10

4

4