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CM150DU-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TC Measured
Point
B
E
C
CM
T
3 - M6 Nuts
A
D
Q
K K K
QN
E2
S 4 - Mounting
Holes
H
J
U
P
R
C1C2E1
H
M
L
G2
E2
E1
G1
F
G
Dual IGBTMOD™
U-Series Module
150 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recover y
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
Dimensions Inches Millimeters
K 0.55 14.0
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
S 0.25 Dia. 6.5 Dia.
T 0.6 15.15
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM150DU-24H is a
1200V (V
), 150 Ampere Dual
CES
IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 150 24
CES
53
53

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DU-24H
Dual IGBTMOD™ U-Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM150DU-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
150 Amperes
300* Amperes
150 Amperes
300* Amperes
890 Watts
2500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 15mA, VCE = 10V 4.5 6 7.5 Volts
IC = 150A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts
IC = 150A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 600V, IC = 150A, VGE = 15V – 560 – nC
IE = 150A, VGE = 0V – – 3.2 Volts
rating.
j(max)
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Tur n-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VCE = 10V, VGE = 0V – – 7.4 nf
VCC = 600V, IC = 150A, – – 200 ns
V
= V
GE1
= 15V, – – 250 ns
GE2
RG = 2.1V, Resistive – – 300 ns
Load Switching Operation – – 350 ns
IE = 150A, diE/dt = -300A/µs––300ns
IE = 150A, diE/dt = -300A/µs – 0.82 – µC
––22nf
– – 4.4 nf
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
54
54
Q Per IGBT 1/2 Module – – 0.14 °C/W
th(j-c)
D Per FWDi 1/2 Module – – 0.24 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.020 – °C/W

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DU-24H
Dual IGBTMOD™ U-Series Module
150 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
300
240
, (AMPERES)
C
180
120
60
COLLECTOR CURRENT, I
0
10
8
, (VOLTS)
CE(sat)
6
o
Tj = 25
15
C
12
VGE = 20V
11
10
9
8
0246810
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SATURATION VOLTAGE CHARACTERISTICS
COLLECTOR-EMITTER
(TYPICAL)
Tj = 25°C
IC = 300A
IC = 150A
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
3
10
2
10
1
10
SWITCHING TIME, (ns)
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
(TYPICAL)
IC = 60A
t
f
t
d(off)
t
d(on)
t
r
VCC = 600V
V
= ±15V
GE
R
= 2.1 Ω
G
T
= 125°C
j
2
10
COLLECTOR-EMITTER
(TYPICAL)
VGE = 15V
Tj = 25°C
= 125°C
T
j
0 60 120 180 240
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
VGE = 0V
f = 1MHz
-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
10
GATE CHARGE, V
CE
C
ies
C
oes
C
res
1
10
GE
IC = 150A
VCC = 400V
VCC = 600V
300
10
2
300
240
, (AMPERES)
C
180
TRANSFER CHARACTERISTICS
VCE = 10V
= 25°C
T
j
T
= 125°C
j
(TYPICAL)
120
60
COLLECTOR CURRENT, I
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
2
10
, (AMPERES)
E
1
10
EMITTER CURRENT, I
0
10
1.0 3.5
EMITTER-COLLECTOR VOLTAGE, V
REVERSE RECOVERY CHARACTERISTICS
3
10
di/dt = -300A/µsec
= 25°C
T
j
, (ns)
rr
2
10
(TYPICAL)
1.5 2.0 2.5 3.0
EC
(TYPICAL)
t
rr
, (VOLTS)
10
10
3
, (AMPERES)
rr
2
SATURATION VOLTAGE CHARACTERISTICS
5
)
4
, (VOLTS
CE(sat)
3
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
2
10
, (nF)
res
1
, C
10
oes
, C
ies
0
10
CAPACITANCE, C
-1
10
10
20
16
, (VOLTS)
GE
12
8
REVERSE RECOVERY TIME, t
1
3
10
10
1
10
EMITTER CURRENT, IE, (AMPERES)
I
rr
2
10
10
3
10
4
GATE-EMITTER VOLTAGE, V
1
REVERSE RECOVERY CURRENT, I
0
0 200 400
GATE CHARGE, QG, (nC)
600 800
55
55

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DU-24H
Dual IGBTMOD™ U-Series Module
150 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
-3
10
1
th(j-c)
10
Single Pulse
T
= 25°C
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
(IGBT)
-2
10
-1
10
th(j-c)
-5
10
TIME, (s)
0
10
= 0.14°C/W
-4
10
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1
10
-1
10
-2
10
-3
10
-3
10
-3
10
1
th(j-c)
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
(FWDi)
-2
10
-1
10
th(j-c)
-5
10
TIME, (s)
0
10
= 0.24°C/W
-4
10
1
10
-1
10
-2
10
-3
10
-3
10
56
56