C&H Technology CM150DU-12F User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM150DU-12F

Q (2
PLACES)

CM

A

B

W

C

D

R

U U

TVT

K K

P - NUTS (3 TYP)

C2E1 E2 C1

X

M

N

E

F

G

F

J

Y

L

S

H (4
PLACES)

E2 G2G1 E1

TC MEASURED POINT

C2E1

RT

C

RT

C

E2

E1

G1

C1

E2

G2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0

B 1.89 48.0

C 1.18 +0.04/-0.02 30.0 +1.0/-0.5

D 3.15±0.01 80.0±0.25

E 0.43 11.0

F 0.16 4.0

G 0.71 18.0

H 0.02 0.5

J 0.53 13.5

K 0.91 23.0

L 0.83 21.2

M 0.67 17.0

Dimensions Inches Millimeters

N 0.28 7.0

P M5 M5

Q Dia. 0.26 6.5 Dia.

R 0.02 4.0

S 0.30 7.5

T 0.63 16.0

U 0.10 2.5

V 1.0 25.0

W 0.94 24.0

X 0.51 13.0

Y 0.47 12.0

Z 0.47 12.0

Trench Gate Design
Dual IGBTMOD™

150 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con­sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-con­nected super-fast recovery free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ UPS
£ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM150DU-12F is a
600V (V
IGBTMOD™ Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 150 12

CE(sat)

Free-Wheel Diode

Heat Sinking

), 150 Ampere Dual

CES

CES

1

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150DU-12F
Trench Gate Design Dual IGBTMOD™

150 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol CM150DU-12F Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E SHORT) V

Gate-Emitter Voltage (C-E SHORT) V

Collector Current (Tc = 25°C) IC 150 Amperes

Peak Collector Current I

Emitter Current** (Tc = 25°C) IE 150 Amperes

Peak Emitter Current** IEM 300* Amperes

Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 520 Watts

Mounting Torque, M5 Main Terminal – 40 in-lb

Mounting Torque, M5 Mounting – 40 in-lb

Weight – 310 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

-40 to 125 °C

stg

600 Volts

CES

±20 Volts

GES

CM

2500 Volts

iso

300* Amperes

Static Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

IC = 150A, VGE = 15V, Tj = 125°C – 1.6 – Volts

Total Gate Charge QG VCC = 300V, IC = 150A, VGE = 15V – 930 – nC

Emitter-Collector Voltage** VEC IE = 150A, VGE = 0V – – 2.6 Volts

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES

VGE = V

GES

IC = 15mA, VCE = 10V 5 6 7 Volts

GE(th)

IC = 150A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts

CE(sat)

VCE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 20 μA

GES

rating.

j(max)

2

2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150DU-12F
Trench Gate Design Dual IGBTMOD™

150 Amperes/600 Volts

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Times Fall Time tf Inductive Load – – 250 ns

Diode Reverse Recovery Time** trr Switching Operation – – 150 ns

Diode Reverse Recovery Charge** Qrr IE = 150A – 2.8 – μC

– – 41 nf

ies

VCE = 10V, VGE = 0V – – 2.7 nf

oes

– – 1.5 nf

res

VCC = 300V, IC = 150A, – – 120 ns

d(on)

= V

GE1

RG = 4.2, – – 350 ns

d(off)

= 15V, – – 100 ns

GE2

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Tc Reference Point Under Chip

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Q Per IGBT 1/2 Module, Tc Reference – 0.24 °C/W

th(j-c)

D Per FWDi 1/2 Module, Tc Reference – – 0.47 °C/W

th(j-c)

'Q Per IGBT 1/2 Module, – 0.16 °C/W

th(j-c)

Per Module, Thermal Grease Applied – 0.035 – °C/W

th(c-f)

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE, V

GE

20

0 200

16

12

8

4

0

400 600

1000 1200 1400

VCC = 300V

800

VCC = 200V

IC = 150A

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

2

10

1

10

2

10

3

10

1

10

0

t

rr

I

rr

10

2

10

1

10

0

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

0

10

1

10

3

10

2

10

2

10

1

10

0

t

d(off)

t

d(on)

t

r

VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive Load

t

f

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

0

10

2

10

2

10

1

10

0

10

-1

VGE = 0V

10

1

C

ies

C

oes

0 1.0 2.0 3.0 4.0

10

0

10

1

10

2

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat

)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

0 6 8 1

210 181614 20

4

3

2

1

0

Tj = 25°C

IC = 60A

IC = 300A

IC = 150A

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat)

, (VOLTS

)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

3

0 50 100 150 200

2

1

0

300250

VGE = 15V

Tj = 25°C
Tj = 125°C

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 1 2 3 4

0

Tj = 25°C

50

100

200

150

250

300

VGE = 20V

15

10

9.5

9

8.5

7.5

8

11

C

res

Tj = 25°C

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Per Unit Base
R

th(j-c)

= 0.24°C/W (IGBT)

R

th(j-c)

= 0.47°C/W (FWDi)
Single Pulse
TC = 25°C

VCC = 300V
VGE = ±15V
RG = 4.2 Ω
Tj = 25°C
Inductive Load

CM150DU-12F
Trench Gate Design Dual IGBTMOD™

150 Amperes/600 Volts

4