C&H Technology CM1500HC-66R User Manual
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MITSUBISHI HVIGBT MODULES
Prepared by
Approved by
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
S. Iura Revision: 1.6
H. Yamaguchi : Apr. 2011
CM1500HC-66R
HIGH POWER SWITCHING USE
CM1500HC-66R
● IC ……………………… 1500 A
● V
CES
● 1-element in a Pack
● Insulated Type
● LPT-IGBT / Soft Recovery Diode
● AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
…………………… 3300 V
Dimensions in mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 1 of 9
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
IC DC, Tc = 95°C 1500 A
ICM
IE DC 1500 A
IEM
Pc
V
iso
Ve
Tj
Top
T
stg
t
psc
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
Item
VGE = 0V, Tj = −40…+150°C 3300
= 0V, Tj = −50°C 3200
V
GE
VCE = 0V, Tj = 25°C ± 20 V
(Note 1)
Pulse
(Note 2)
(Note 3)
(Note 1)
Pulse
T
= 25°C, IGBT part 15600 W
c
RMS, sinusoidal, f = 60Hz, t = 1 min. 6000 V
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC 2600 V
−50 ~ +150 °C
−50 ~ +150 °C
−55 ~ +150 °C
=2500V, VCE ≤ V
V
CC
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Qg
V
CE(sat)
t
d(on)
tr
E
on(10%)
Eon
Collector cutoff current V
Gate-emitter threshold voltage V
Gate leakage current V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-on switching energy
Item Conditions
(Note 5)
(Note 6)
= V
CE
CES
= 10 V, IC = 150 mA, Tj = 25°C
CE
= V
GE
GES
V
= 10 V, VGE = 0 V, f = 100 kHz
CE
= 25°C
T
j
VCC = 1800 V, IC = 1500 A, VGE = ±15 V
= 1500 A
I
C
= 15 V
V
GE
= 1800 V
V
CC
= 1500 A
I
C
= ±15 V
V
GE
= 1.6 Ω
R
G(on)
= 100 nH
L
s
Inductive load
Conditions Ratings Unit
V
3000 A
3000 A
, VGE =15V, Tj =150°C
, VGE = 0V
CES
Tj = 25°C
Tj = 125°C
T
= 150°C
j
Limits
Min Typ Max
— — 6.0
— 6.0 —
— 36.0 —
10 µs
Unit
mA
5.7 6.2 6.7 V
, VCE = 0V, Tj = 25°C
−0.5 — 0.5 µA
— 210.0 — nF
— 13.0 — nF
— 6.0 — nF
— 16.0 — µC
(Note 4)
Tj = 25°C
Tj = 125°C
T
= 150°C
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
T
= 150°C
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
— 2.45 —
— 3.10 3.70
— 3.25 —
— 1.00 —
— 0.95 1.25
— 0.95 1.25
— 0.28 —
— 0.30 0.50
— 0.30 0.50
— 2.10 —
— 2.75 —
— 3.00 —
— 2.20 —
— 2.90 —
— 3.20 —
V
µs
µs
J/P
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 2 of 9
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