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MITSUBISHI HVIGBT MODULES
Prepared by
Approved by
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
S. Iura Revision: 1.6
H. Yamaguchi : Apr. 2011
CM1500HC-66R
HIGH POWER SWITCHING USE
CM1500HC-66R
● IC ……………………… 1500 A
● V
CES
● 1-element in a Pack
● Insulated Type
● LPT-IGBT / Soft Recovery Diode
● AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
…………………… 3300 V
Dimensions in mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 1 of 9
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
IC DC, Tc = 95°C 1500 A
ICM
IE DC 1500 A
IEM
Pc
V
iso
Ve
Tj
Top
T
stg
t
psc
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
Item
VGE = 0V, Tj = −40…+150°C 3300
= 0V, Tj = −50°C 3200
V
GE
VCE = 0V, Tj = 25°C ± 20 V
(Note 1)
Pulse
(Note 2)
(Note 3)
(Note 1)
Pulse
T
= 25°C, IGBT part 15600 W
c
RMS, sinusoidal, f = 60Hz, t = 1 min. 6000 V
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC 2600 V
−50 ~ +150 °C
−50 ~ +150 °C
−55 ~ +150 °C
=2500V, VCE ≤ V
V
CC
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Qg
V
CE(sat)
t
d(on)
tr
E
on(10%)
Eon
Collector cutoff current V
Gate-emitter threshold voltage V
Gate leakage current V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-on switching energy
Item Conditions
(Note 5)
(Note 6)
= V
CE
CES
= 10 V, IC = 150 mA, Tj = 25°C
CE
= V
GE
GES
V
= 10 V, VGE = 0 V, f = 100 kHz
CE
= 25°C
T
j
VCC = 1800 V, IC = 1500 A, VGE = ±15 V
= 1500 A
I
C
= 15 V
V
GE
= 1800 V
V
CC
= 1500 A
I
C
= ±15 V
V
GE
= 1.6 Ω
R
G(on)
= 100 nH
L
s
Inductive load
Conditions Ratings Unit
V
3000 A
3000 A
, VGE =15V, Tj =150°C
, VGE = 0V
CES
Tj = 25°C
Tj = 125°C
T
= 150°C
j
Limits
Min Typ Max
— — 6.0
— 6.0 —
— 36.0 —
10 µs
Unit
mA
5.7 6.2 6.7 V
, VCE = 0V, Tj = 25°C
−0.5 — 0.5 µA
— 210.0 — nF
— 13.0 — nF
— 6.0 — nF
— 16.0 — µC
(Note 4)
Tj = 25°C
Tj = 125°C
T
= 150°C
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
T
= 150°C
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
— 2.45 —
— 3.10 3.70
— 3.25 —
— 1.00 —
— 0.95 1.25
— 0.95 1.25
— 0.28 —
— 0.30 0.50
— 0.30 0.50
— 2.10 —
— 2.75 —
— 3.00 —
— 2.20 —
— 2.90 —
— 3.20 —
V
µs
µs
J/P
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 2 of 9
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
Symbol
t
d(off)
tf
E
off(10%)
E
off
VEC
trr
Irr
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Turn-off switching energy
Emitter-collector voltage
Reverse recovery time
Reverse recovery current
Item Conditions
Qrr Reverse recovery charge
E
rec(10%)
E
rec
Reverse recovery energy
Reverse recovery energy
(Note 5)
(Note 6)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 5)
(Note 2)
(Note 6)
= 1800 V
V
CC
= 1500 A
I
C
= ±15 V
V
GE
R
G(off)
= 100 nH
L
s
Inductive load
I
= 1500 A
E
VGE = 0 V
= 1800 V
V
CC
= 1500 A
I
C
= ±15 V
V
GE
R
G(on)
= 100 nH
L
s
Inductive load
= 5.6 Ω
= 1.6 Ω
(Note 4)
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Tj = 25°C
Tj = 125°C
T
= 150°C
j
Tj = 25°C
Tj = 125°C
T
= 150°C
j
Tj = 25°C
Tj = 125°C
= 150°C
T
j
Min Typ Max
— 2.70 —
— 2.80 3.30
— 2.85 3.30
— 0.30 —
— 0.35 1.00
— 0.40 1.00
— 2.00 —
— 2.45 —
— 2.50 —
— 2.20 —
— 2.70 —
— 2.80 —
— 2.15 —
— 2.30 2.80
— 2.25 —
— 0.50 —
— 0.70 —
— 0.80 —
— 1250 —
— 1500 —
— 1550 —
— 1050 —
— 1700 —
— 2000 —
— 1.05 —
— 1.75 —
— 2.00 —
— 1.20 —
— 2.00 —
— 2.30 —
Limits
Unit
µs
µs
J/P
J/P
V
µs
A
µC
J/P
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 3 of 9
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Item Conditions
Unit
Min Typ Max
Limits
R
Thermal resistance Junction to Case, IGBT part — — 8.0 K/kW
th(j-c)Q
R
Thermal resistance Junction to Case, FWDi part — — 15.0 K/kW
th(j-c)R
R
Contact thermal resistance
th(c-f)
Case to Fin,
λ
= 1W/m·K, D
grease
= 100 µm
(c-f)
— 6.0 — K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Min Typ Max
Mt M8: Main terminals screw 7.0 — 22.0 N·m
Ms M6: Mounting screw 3.0 — 6.0 N·m
Mt
Mounting torque
M4: Auxiliary terminals screw 1.0 — 3.0 N·m
m Mass — 1.2 — kg
CTI Comparative tracking index 600 — — —
da Clearance 19.5 — — mm
ds Creepage distance 32.0 — — mm
L
Parasitic stray inductance — 11.0 — nH
P CE
R
Internal lead resistance Tc = 25°C — 0.12 — mΩ
CC’+EE’
rg Internal gate resistor Tc = 25°C — 1.5 — Ω
Limits
Unit
Note 1. Pulse width and repetition rate should be such that junction temperature (T
Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Note 3. Junction temperature (T
Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note 5. E
Note 6. The integration range of E
on(10%)
/ E
off(10%)
/ E
) should not exceed T
j
are the integral of 0.1VCE x 0.1IC x dt.
rec(10%)
/ E
/ E
on
according to IEC 60747.
off
rec
rating (150°C).
jmax
) does not exceed T
j
rating (150°C).
opmax
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 4 of 9
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS OUTPUT CHARACTERISTICS
(TYPICAL) (TYPICAL)
3000
Tj = 150°C
3000
VCE = V
GE
Collector Current [A]
2500
2000
1500
1000
500
0
0123456
VGE = 19V
VGE = 15V
VGE = 13V
Collector - Emitter Voltage [V]
VGE = 11V
VGE = 9V
Collector Current [A]
2500
2000
1500
1000
Tj = 150°C
500
0
024681012
Gate - Emitter Voltage [V]
Tj = 25°C
COLLECTOR-EMITTER SATURATION VOLTAGE FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL) CHARACTERISTICS (TYPICAL)
3000
VGE = 15V
3000
2500
2000
1500
1000
Tj = 25°C
Tj = 125°C
Tj = 150°C
Collector Current [A]
500
0
012345
Collector-Em i tter Saturation Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
2500
2000
1500
1000
Emitter Current [A]
500
0
Tj = 125°C
Tj = 25°C
012345
Tj = 150°C
Emitter-Collector Voltage [V]
HVM-1054-C 5 of 9
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
th
4
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1000
Cies
100
10
Capacitance [nF]
VGE = 0V, Tj = 25°C
f = 100kHz
Coes
Cres
HIGH POWER SWITCHING USE
INSULATED TYPE
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 1800V, IC = 1500A
Tj = 25°C
15
10
5
0
-5
Gate-Emitter Vol tage [V]
-10
1
0.1 1 10 100
Collector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
VCC = 1800V, VGE = ±15V
R
7
6
5
4
3
2
Switching Energies [J/pulse]
1
= 1.6Ω, R
G(on)
LS = 100nH , Tj = 125° C
Inductive load
G(off)
= 5.6Ω
Eon
Eoff
Erec
-15
0 5 10 15 20
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
VCC = 1800V, VGE = ±15V
R
7
6
5
4
3
2
Switching Energies [J/pulse]
1
= 1.6Ω, R
G(on)
LS = 100nH , Tj = 150° C
Inductive load
G(off)
= 5.6Ω
Eon
Eoff
Erec
0
0 500 1000 1500 2000 2500 3000
Collector Current [A]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
0
0 500 1000 1500 2000 2500 3000
Collector Current [A]
HVM-1054-C 6 of 9
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
th
4
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
VCC = 1800V, IC = 1500A
VGE = ±15V , LS = 100nH
7
Tj = 125°C, Induct ive l oad
6
5
4
3
2
Switching Energies [J/pulse]
1
Eon
Eoff
Erec
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
VCC = 1800V, IC = 1500A
VGE = ±15V , LS = 100nH
7
Tj = 150°C, Induct ive l oad
6
5
4
3
2
Switching Energies [J/pulse]
1
Eon
Erec
Eoff
0
024681012
Gate res is tor [Ohm ]
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
VCC = 1800V, VGE = ±15V
R
= 1.6Ω, R
G(on)
LS = 100nH , Tj = 125° C
Inductive load
10
1
tf
Switching Times [µs]
0.1
tr
G(off)
= 5.6Ω
td(off)
td( on)
0
02468101
Gate res is tor [Ohm ]
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
VCC = 1800V, VGE = ±15V
R
= 1.6Ω, R
G(on)
LS = 100nH , Tj = 150° C
Inductive load
10
1
tr
Switching Times [µs]
0.1
tf
G(off)
= 5.6Ω
td(off)
td( on)
2
0.01
100 1000 10000
Collector Current [A]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
0.01
100 1000 10000
Collector Current [A]
HVM-1054-C 7 of 9
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
th
4
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
VCC = 1800V, VGE = ±15V
R
= 1.6Ω, LS = 100nH
G(on)
Tj = 125°C, Induct ive l oad
Irr
10
1
trr
Reverse Recovery Time [µs]
10000
1000
100
Reverse Recovery Current [A]
HIGH POWER SWITCHING USE
INSULATED TYPE
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
VCC = 1800V, VGE = ±15V
R
= 1.6Ω, LS = 100nH
G(on)
Tj = 150°C, Induct ive l oad
Irr
10
1
trr
Reverse Recovery Time [µs]
10000
1000
100
Reverse Recovery Current [A]
0.1
100 1000 10000
Emitter Current [A]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
Rth(j -c) Q = 8.0K/ kW
Rth(j -c) R = 15.0K/kW
1
0.8
0.6
0.4
0.2
10
[K/kW] :
R
i
[sec] :
τ
i
0.1
100 1000 10000
Emitter Current [A]
⎞
⎛
t
⎧
n
)t(
=
−
⎪
⎨
−
∑
RZ
=
1i
1234
0.0096 0.1893 0.4044 0.3967
0.0001 0.0058 0.0602 0.3512
exp1
i)cj(th
⎪
⎩
⎫
⎟
⎜
−
⎪
⎟
⎜
τ
i
⎠
⎝
⎬
⎪
⎭
10
Normalized Transient Thermal impedance
0
0.001 0.01 0.1 1 10
Tim e [s ]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 8 of 9
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
th
4
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
4000
VCC ≤ 2500V, VGE = ±15V
Tj = 150°C, R
3000
2000
Collector Current [A]
1000
G(off)
= 5.6Ω
HIGH POWER SWITCHING USE
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
20
VCC ≤ 2500V, VGE = ±15V
R
= 1.6Ω, R
G(on)
Tj = 150°C
15
10
Collector Current [kA]
5
G(off)
= 5.6Ω
INSULATED TYPE
0
0 1000 2000 3000 4000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
4000
VCC ≤ 2500V, di /dt < 9kA/µs
Tj = 150°C
3000
2000
1000
Reverse Recovery Current [A]
0
0 1000 2000 3000 4000
Collector-Emitter Voltage [V]
0
0 1000 2000 3000 4000
Emitter-Collector Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 9 of 9
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