C&H Technology CM1400DU-24NF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM1400DU-24NF

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

TC MEASURED POINTS

(8 PLACES)

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.91 150.0

B 5.10 129.5

C 1.67±0.01 42.5±0.25

D 5.41±0.01 137.5±0.25

E 6.54 166.0

F 2.91±0.01 74.0±0.25

G 1.65 42.0

H 0.55 14.0

J 1.50±0.01 38.0±0.25

K 0.16 4.0

Housing Type (J.S.T. MFG. CO. LTD)

S = VHR-2N
T = VHR-5N

P

U

C2

S

G2 E1

E2 G1

T

V

H H HHH H

A
D
G

H H

C2E1

E2

G G

LABEL

C2

C2E1

C1

E2

Dimensions Inches Millimeters

L 1.36 +0.04/-0.02 34.6 +1.0/-0.5

M 0.075±0.08 1.9±0.2

P 0.26 6.5

R M6 Metric M6

U 0.62 15.7

V 0.71 18.0

W 0.75 19.0

X 0.43 11.0

Y 0.83 21.0

Z 0.41 10.5

AA 0.22 5.5

(THE SIDE OF Cu BASEPLATE)

W

C1

J

X

F

B

C

Y

U

R (9 PLACES)

E

Z

F

J

AA

C1

M

L

L

G2
E2

Mega Power
Dual IGBTMOD™

1400 Amperes/1200 Volts

K

Description:

Powerex IGBTMOD™ Modules are
designed for use in switching two
IGBT applications. Each
module consists of a half-bridge
configuration, with each transistor
having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£

£ Isolated Baseplate for Easy

Applications:

£ High Power UPS
£ Large Motor Drives
£ Utility Interface Inverters

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM1400DU-24NF
is a 1200V (V
Dual IGBTMOD Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 1400 24

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

Heat Sinking

), 1400 Ampere

CES

CES

111/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1400DU-24NF
Mega Power Dual IGBTMOD™

1400 Amperes/1200 Volts

Maximum Ratings, Tj = 25°C unless otherwise specied

Ratings Symbol Ratings Units

Collector-Emitter Voltage (G-E SHORT) V

Gate-Emitter Voltage (C-E SHORT) V

Collector Current DC (TC' = 94°C)*5 IC 1400 Amperes

Peak Collector Current (Pulse)*2 I

Emitter Current (TC = 25°C) I

Peak Emitter Current (Pulse)*2 I

Maximum Collector Dissipation (TC = 25°C) P

Junction Temperature Tj -40 to 150 °C

Storage Temperature*4 T

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 min.) V

Mounting Torque, M6 Mounting Screws – 40 in-lb

Mounting Torque, M6 Main Terminal Screw – 40 in-lb

Weight (Typical) – 1400 Grams

1200 Volts

CES

±20 Volts

GES

CM

*1

1400 Amperes

E

*1

2800 Amperes

EM

*3

3900 Watts

C

-40 to 125 °C

stg

2500 Volts

iso

2800 Amperes

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

CES

IC = 140mA, VCE = 10V 6 7 8 Volts

GE(th)

±VGE = V

GES

IC = 1400A, VGE = 15V, Tj = 25°C*4 – 1.8 2.5 Volts

CE(sat)

(Without Lead Resistance) (Chip) IC = 1400A, VGE = 15V, Tj = 125°C*4 – 2.0 – Volts

Module Lead Resistance R

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

IC = 1400A, Terminal-Chip – 0.286 – mΩ

(lead)

– – 220 nF

ies

VCE = 10V, VGE = 0V – – 25 nF

oes

– – 4.7 nF

res

Total Gate Charge QG VCC = 600V, IC = 1400A, VGE = 15V – 7200 – nC

Turn-on Delay Time t

– – 800 ns

d(on)

Turn-on Rise Time tr VCC = 600V, IC = 1400A, – – 300 ns

Turn-off Delay Time t

VGE = ±15V, – – 1000 ns

d(off)

Turn-off Fall Time tf RG = 0.22Ω, Inductive Load, – – 300 ns

Reverse Recovery Time t

Reverse Recovery Charge Q

Emitter-Collector Voltage V

(Without Lead Resistance) (Chip)

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*3 Junction temperature (Tj) should not increase beyond maximum junction temperature (T
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5 Case temperature (TC') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.
*8 The operation temperature is restrained by the permission temperature of female connector.

*1

IE = 1400A – – 700 ns

rr

*1

– 90 – µC

rr

*1

IE = 1400A, VGE = 0V – – 3.2 Volts

EC

VCE = V

) rating.

j(max)

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 1.5 μA

GES

rating.

j(max)

2

11/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1400DU-24NF
Mega Power Dual IGBTMOD™

1400 Amperes/1200 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*7 R

Thermal Resistance, Junction to Case*7 R

Contact Thermal Resistance*6 R

Thermal Grease Applied (1/2 Module)

Thermal Resistance, Junction to Case*5 R

TC Reference Point Under the Chips

Thermal Resistance, Junction to Case*5 R

TC Reference Point Under the Chips

External Gate Resistance RG 0.22 – 2.2 Ω

*5 Case temperature (TC') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Case temperature (TC) measured point is shown in the device dtawing.

Q IGBT Part (1/2 Module) – – 0.032 °C/W

th(j-c)

D FWDi Part (1/2 Module) – – 0.053 °C/W

th(j-c)

Case to Heatsink, – 0.016 – °C/W

th(c-f)

Q Per IGBT Part, – – 0.014 °C/W

th(j-c')

D Per FWDi Part, – – 0.023 °C/W

th(j-c')

OUTPUT CHARACTERISTICS

(TYPICAL)

2800

2400

2000

, (AMPERES)

C

1600

VGE = 20V

15

13

1200

800

400

COLLECTOR CURRENT, I

0

0 1 2 3 4 5 6 7 8 9 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 1400A

IC = 560A

2

SATURATION VOLTAGE, V

0

0 4 8 12 16 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

Tj = 25°C

12

11

10

9

8

IC = 2800A

2800

2400

2000

, (AMPERES)

C

1600

TRANSFER CHARACTERISTICS

VCE = 10V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

1200

800

400

COLLECTOR CURRENT, I

0

0 8 12 16 20

4

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

4

10

, (AMPERES)

E

3

10

EMITTER CURRENT, I

2

10

0.5 1.5 1.0 3.0 3.52.0 2.5 4.0

EMITTER-COLLECTOR VOLTAGE, V

(TYPICAL)

Tj = 25°C

= 125°C

T

j

, (VOLTS)

EC

SATURATION VOLTAGE CHARACTERISTICS

5

)

4

, (VOLTS

CE(sat)

3

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

3

10

, (nF)

res

2

, C

10

oes

, C

ies

1

10

CAPACITANCE, C

0

10

10

600

0 400 1200

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

VGE = 0V

-1

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

10

28001600 24002000

CE

C

ies

C

oes

C

res

1

2

10

11/11 Rev. 2

3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

CM1400DU-24NF
Mega Power Dual IGBTMOD™

1400 Amperes/1200 Volts

SWITCHING CHARACTERISTICS

4

10

t

d(off)

3

10

2

10

SWITCHING TIME, (ns)

1

10

2

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

10-310

1

th(j-c)

10

Per Unit Base
R

= 0.014°C/W (IGBT)

th(j-c')

R

= 0.023°C/W (FWDi)

th(j-c')

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

Single Pulse
T

= 25°C

C

-3

10

SWITCHING ENERGY VS.

EXTERNAL GATE RESISTANCE

3

10

HALF-BRIDGE

(TYPICAL)

t

d(on)

t

f

t

r

VCC = 600V
V

GE

R

G

T

= 125°C

j

Inductive Load

3

10

TRANSIENT THERMAL

(IGBT & FWDi)

-2

-1

10

-5

10

TIME, (s)

(TYPICAL)

= 15V

= 0.22Ω

0

10

-4

10

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

(TYPICAL)

3

10

I

rr

t

rr

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

2

10

VCC = 600V
V

= 15V

GE

R

= 0.22Ω

10

3

10

T
Inductive Load

3

, (AMPERES)

E

VCC = 600V
V
T
R

Inductive Load

G

= 125°C

j

= 15V

GE

= 125°C

j

= 0.22Ω

G

E

E

SW(on)
SW(off)

REVERSE RECOVERY TIME, t

1

4

10

1

10

-3

10

10

2

10

EMITTER CURRENT, I

SWITCHING LOSS VS. COLLECTOR CURRENT

3

10

, (mJ/PULSE)

2

10

SW(off)

, E

SW(on)

1

10

SWITCHING LOSS, E

0

10

2

10

COLLECTOR CURRENT, IC, (AMPERES)

REVERSE RECOVERY ENERGY VS.

EXTERNAL GATE RESISTANCE

3

10

(TYPICAL)

(TYPICAL)

2

10

8

4

GATE-EMITTER VOLTAGE, V

1

REVERSE RECOVERY CURRENT, I

10

4

10

4

10

0

0

3

10

, (mJ/PULSE)

rr

2

10

1

10

REVERSE RECOVERY ENERGY, E

0

10

10

GATE CHARGE, V

GE

IC = 1400A

VCC = 400V

VCC = 600V

2000 4000 1000080006000

GATE CHARGE, QG, (nC)

REVERSE RECOVERY ENERGY VS.

EMITTER CURRENT

(TYPICAL)

VCC = 600V
V

= 15V

GE

T

= 125°C

j

R

= 0.22Ω

G

Inductive Load

2

EMITTER CURRENT, I

10

3

, (AMPERES)

E

4

10

, (mJ/PULSE)

SW(off)

, E

2

10

SW(on)

SWITCHING LOSS, E

1

10

0 1.51.00.5 2.52.0

EXTERNAL GATE RESISTANCE, RG, (Ω)

VCC = 600V
V

= 15V

GE

T

= 125°C

j

I

= 1400A

C

E

SW(on)

E

SW(off)

Inductive Load

4

, (mJ/PULSE)

rr

2

10

REVERSE RECOVERY ENERGY, E

1

10

0 1.51.00.5 2.52.0

EXTERNAL GATE RESISTANCE, RG, (Ω)

VCC = 600V
V

= 15V

GE

T

= 125°C

j

I

= 1400A

C

Inductive Load

11/11 Rev. 2