C&H Technology CM1200HC-50H User Manual

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Suite 108
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MITSUBISHI HVIGBT MODULES

CM1200HC-50H

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE

CM1200HC-50H

● IC ................................................................ 1200A

● V

CES ....................................................... 2500V

● Insulated Type

● 1-element in a Pack

● AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

INSULA TED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

190

±0.5

171

3 - M4 NUTS

screwing depth
min. 7.7

CM

57

C

79.4

±0.1

±0.3

C

E

G

E

61.5

±0.1

±0.1

57

20.25

41.25

±0.3 ±0.3

57

CC

EE

±0.2
±0.3

61.5

±0.2

13

±0.1

6 - M8 NUTS

+0.1

–0.2

20

±0.1

±0.5

±0.2

40

124

140

±0.1

8 - φ7 MOUNTING HOLES

screwing depth
min. 16.5

±0.2

5.2

+1

0

±0.15

5

+1

0

38

28

C

G
E

C

E

CIRCUIT DIAGRAM

±0.3

40

LABEL

C

E

±0.2

15

C

E

±0.5

29.5

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

MITSUBISHI HVIGBT MODULES

CM1200HC-50H

HIGH POWER SWITCHING USE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol Item Conditions UnitRatings

V

CES

VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso

tpsc

ELECTRICAL CHARACTERISTICS

Symbol

I

CES

GE(th)

V

IGES

VCE(sat)

Cies
Coes
Cres
Qg

VEC

td(on)
tr
Eon
td(off)
tf
Eoff
trr
Qrr
Erec

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum power dissipation

(Note 3)

VGE = 0V, Tj = 25°C
V

CE = 0V, Tj = 25°C

T

C = 105°C

Pulse (Note 1)

Pulse (Note 1)
T

C = 25°C, IGBT part

Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width

RMS, sinusoidal, f = 60Hz, t = 1min.
V

CC = 1700V, VCES ≤ 2500V, VGE = 15V

T

j = 125°C

Item Conditions

Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge

(Note 2)

Emitter-collector voltage

Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge

(Note 2)

Reverse recovery energy

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

j) should not exceed Tjmax rating (150°C).

CE = VCES, VGE = 0V, Tj = 25°C

V

I

C = 120mA, VCE = 10V, Tj = 25°C

GE = VGES, VCE = 0V, Tj = 25°C

V
I

C = 1200A, VGE = 15V, Tj = 25°C (Note 4)

I

C = 1200A, VGE = 15V, Tj = 125°C (Note 4)

V

CE = 10V, f = 100kHz

V

GE = 0V, Tj = 25°C
CC = 1250V, IC = 1200A, VGE = 15V, Tj = 25°C

V
I

E = 1200A, VGE = 0V, Tj = 25°C (Note 4)

I

E = 1200A, VGE = 0V, Tj = 125°C (Note 4)

V

CC = 1250V, IC = 1200A, VGE = ±15V

R

G(on) = 1.6Ω, Tj = 125°C, Ls = 100nH

Inductive load
V

CC = 1250V, IC = 1200A, VGE = ±15V

R

G(off) = 1.6Ω, Tj = 125°C, Ls = 100nH

Inductive load
V

CC = 1250V, IC = 1200A, VGE = ±15V

R

G(on) = 1.6Ω, Tj = 125°C, Ls = 100nH

Inductive load

14700

–40 ~ +150
–40 ~ +125
–40 ~ +125

Limits

Min Typ Max

—

5.0

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

INSULATED TYPE

2500

±20

1200
2400
1200
2400

6000

10

—

6.0

—

2.80

3.15
180

19.8

6.0

8.1

2.50

2.30

—
—

1.30

—
—

1.20

—

700

0.45

15

7.0

0.5

3.60

—
—
—
—
—

3.25

—

1.60

1.00

—

2.50

1.00

—

1.20

—
—

J/pulse

J/pulse

J/pulse

V
V
A
A
A
A

W

°C
°C
°C

V

µs

Unit

mA

V

µA

V

nF
nF
nF
µC

V

µs
µs

µs
µs

µs
µC

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

THERMAL CHARACTERISTICS

Symbol

Rth(j-c)Q
Rth(j-c)R
Rth(c-f)

Thermal resistance

Contact thermal resistance

MECHANICAL CHARACTERISTICS

Symbol

M

CTI
d

a

ds
LC-E(int)
RC-E(int)

Mounting torque

Mass

—

Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance

Item Conditions

Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ

Item Conditions

M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw

IGBT part
T

C = 25°C

grease = 1W/m·K

MITSUBISHI HVIGBT MODULES

CM1200HC-50H

HIGH POWER SWITCHING USE

INSULATED TYPE

Limits

Min Typ Max

—
—
—

Min Typ Max

7.0

3.0

1.0

—

600

19.5

32.0

—
—

—
—

6.0

Limits

—
—
—

1.5

—
—
—

10

0.16

17.0

13.0

8.5

—

6.0

2.0

—
—
—
—
—
—

Unit

K/kW
K/kW
K/kW

Unit

N·m

kg

—

mm
mm

nH

mΩ

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

MITSUBISHI HVIGBT MODULES

CM1200HC-50H

HIGH POWER SWITCHING USE

INSULATED TYPE

OUTPUT CHARACTERISTICS

2400

T

j

= 25°C

2000

GE

= 20V

)

A

(

1600

V

V

GE

= 15V

1200

800

COLLECTOR CURRENT

400

0

COLLECTOR-EMITTER VOLTAGE (V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

6

)

V

V

GE

(

= 15V

(

TYPICAL

)

2400

V

V

GE

= 12V

CE

2000

)

V

GE

= 10V

A

(

1600

1200

800

COLLECTOR CURRENT

V

GE

= 8V

3421056

400

0

)

(

TYPICAL

)

6

TRANSFER CHARACTERISTICS

(

TYPICAL

)

= 10V

T

j

= 25°C

T

j

= 125°C

684201012

GATE-EMITTER VOLTAGE (V

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(

TYPICAL

)

)

5

4

3

2

1

T

j

= 25°C

T

j

COLLECTOR-EMITTER SATURATION VOLTAGE

0

1200 16008004000 2000 2400

COLLECTOR CURRENT (A

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

= 125°C

)

)

5

V

(

4

3

2

1

EMITTER-COLLECTOR VOLTAGE

0

1200 16008004000 2000 2400

EMITTER CURRENT (A

T

j

= 25°C

T

j

= 125°C

)

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM1200HC-50H

HIGH POWER SWITCHING USE

INSULATED TYPE

CAPACITANCE CHARACTERISTICS

3

10

V

GE

7

f = 100kHz

5

3

2

)

2

10

nF

(

7
5

3

2

1

10

CAPACITANCE

7
5

3

2

0

10

-1

23 57

10

COLLECTOR-EMITTER VOLTAGE (V

SWITCHING ENERGY CHARACTERISTICS

3

V

CC

R

G(on)

j

= 125°C, Inductive load

T

2.5

)

= 0V, T

j

= 25°C

10

= 1250V, V

= R

G(off)

(

TYPICAL

0

)

23 57 23 57

10

1

HALF-BRIDGE

(

TYPICAL

GE

)

= ±15V

= 1.6Ω

GATE CHARGE CHARACTERISTICS

(

TYPICAL

)

20

CC

= 1250V, IC = 1200A

V
T

j

= 25°C

C

ies

16

)

V

(

12

C

oes

C

res

2

10

)

8

GATE-EMITTER VOLTAGE

4

0

GATE CHARGE

963012

(µC)

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

(

TYPICAL

)

6

V

CC

= 1250V, IC = 1200A

V

GE

E

on

)

= ±15V

T

j

= 125°C, Inductive load

5

J/pulse

2

(

E

off

1.5

1

SWITCHING ENERGIES

0.5

0

1200 16008004000 2000 2400

COLLECTOR CURRENT (A

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

E

rec

)

J/pulse

4

(

3

2

SWITCHING ENERGIES

1

0

5 100 15 20

GATE RESISTANCE

(Ω)

E

on

E

off

E

rec

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM1200HC-50H

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME CHARACTERISTICS

2

10

V

CC

= 1250V, V

7

R

G(on)

5

3

2

= R

j

= 125°C, Inductive load

T

)

µs

1

10

(

7
5

1

23 57

t

t

3

2

0

10

SWITCHING TIMES

7
5

3

2

-1

10

10

COLLECTOR CURRENT (A

HALF-BRIDGE

(

GE

G(off)

= 1.6Ω

d(off)

d(on)

2

10

TYPICAL

)

= ±15V

t

r

t

f

23 57 23 57

10

3

)

10

REVERSE RECOVERY CHARACTERISTICS

2

10

V

CC

= 1250V, V

7

G(on)

= R

R

5

T

j

= 125°C, Inductive load

3

)

2

µs

(

1

10

7
5

3

2

0

10

7
5

REVERSE RECOVERY TIME

3

2

-1

4

10

10

1

23 57

G(off)

rr

l

rr

t

= 1.6Ω

2

10

(

TYPICAL

GE

)

= ±15V

23 57 23 57

10

3

EMITTER CURRENT (A

4

10

7
5

)

A

3

(

2

3

10

7
5

3

2

2

10

7
5

REVERSE RECOVERY CURRENT

3

2

1

10

4

10

)

FREE-WHEEL DIODE

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1.2
Single Pulse, T

th(j–c)Q

R
R

th(j–c)R

1.0

C

= 25°C

= 8.5K/kW
= 17K/kW

0.8

0.6

0.4

0.2

NORMALIZED TRANSIENT THERMAL IMPEDANCE

0

10

-3

23 57

10

-2

23 57

TIME (s

10

-1

23 57

)

10

0

23 57

10

1

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM1200HC-50H

HIGH POWER SWITCHING USE

INSULATED TYPE

REVERSE BIAS SAFE OPERATING AREA

3000

V

CC

≤ 1700V, V

T

j

= 125°C, R

2500

)

A

(

2000

1500

1000

COLLECTOR CURRENT

500

0

COLLECTOR-EMITTER VOLTAGE (V

G(off)

(

)

RBSOA

GE

= +/-15V

≥ 1.6Ω

1500 200010005000 2500 3000

FREE-WHEEL DIODE REVERSE

RECOVERY SAFE OPERATING AREA

3000

V

CC

≤ 1700V, di/dt ≤ 4000A/µs

j

= 125°C

T

)

2500

A

(

2000

1500

1000

500

REVERSE RECOVERY CURRENT

0

)

EMITTER-COLLECTOR VOLTAGE (V

(

)

RRSOA

1500 200010005000 2500 3000

)

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005