C&H Technology CM1200HC-50H User Manual
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MITSUBISHI HVIGBT MODULES
CM1200HC-50H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM1200HC-50H
● IC ................................................................ 1200A
● V
CES ....................................................... 2500V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULA TED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
±0.5
171
3 - M4 NUTS
screwing depth
min. 7.7
CM
57
C
79.4
±0.1
±0.3
C
E
G
E
61.5
±0.1
±0.1
57
20.25
41.25
±0.3 ±0.3
57
CC
EE
±0.2
±0.3
61.5
±0.2
13
±0.1
6 - M8 NUTS
+0.1
–0.2
20
±0.1
±0.5
±0.2
40
124
140
±0.1
8 - φ7 MOUNTING HOLES
screwing depth
min. 16.5
±0.2
5.2
+1
0
±0.15
5
+1
0
38
28
C
G
E
C
E
CIRCUIT DIAGRAM
±0.3
40
LABEL
C
E
±0.2
15
C
E
±0.5
29.5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-50H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
CES
VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso
tpsc
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
GE(th)
V
IGES
VCE(sat)
Cies
Coes
Cres
Qg
VEC
td(on)
tr
Eon
td(off)
tf
Eoff
trr
Qrr
Erec
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum power dissipation
(Note 3)
VGE = 0V, Tj = 25°C
V
CE = 0V, Tj = 25°C
T
C = 105°C
Pulse (Note 1)
Pulse (Note 1)
T
C = 25°C, IGBT part
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
RMS, sinusoidal, f = 60Hz, t = 1min.
V
CC = 1700V, VCES ≤ 2500V, VGE = 15V
T
j = 125°C
Item Conditions
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
(Note 2)
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
j) should not exceed Tjmax rating (150°C).
CE = VCES, VGE = 0V, Tj = 25°C
V
I
C = 120mA, VCE = 10V, Tj = 25°C
GE = VGES, VCE = 0V, Tj = 25°C
V
I
C = 1200A, VGE = 15V, Tj = 25°C (Note 4)
I
C = 1200A, VGE = 15V, Tj = 125°C (Note 4)
V
CE = 10V, f = 100kHz
V
GE = 0V, Tj = 25°C
CC = 1250V, IC = 1200A, VGE = 15V, Tj = 25°C
V
I
E = 1200A, VGE = 0V, Tj = 25°C (Note 4)
I
E = 1200A, VGE = 0V, Tj = 125°C (Note 4)
V
CC = 1250V, IC = 1200A, VGE = ±15V
R
G(on) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
CC = 1250V, IC = 1200A, VGE = ±15V
R
G(off) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
CC = 1250V, IC = 1200A, VGE = ±15V
R
G(on) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
14700
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min Typ Max
—
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
2500
±20
1200
2400
1200
2400
6000
10
—
6.0
—
2.80
3.15
180
19.8
6.0
8.1
2.50
2.30
—
—
1.30
—
—
1.20
—
700
0.45
15
7.0
0.5
3.60
—
—
—
—
—
3.25
—
1.60
1.00
—
2.50
1.00
—
1.20
—
—
J/pulse
J/pulse
J/pulse
V
V
A
A
A
A
W
°C
°C
°C
V
µs
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
µs
µs
µs
µC
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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