C&H Technology CM1200HA-24J User Manual

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Suite 108
Minnetonka, MN 55345

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM1200HA-24J

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A
B

E

E

H

U - M4 THD
(2 TYP.)

L

G

S - M8 THD
(2 TYP.)

C

NF

E

Dimensions Inches Millimeters

G

J

D

L 0.79 20.0
M 0.77 19.5
N 0.75 19.0
P 0.61 15.6
Q 0.51 13.0
R 0.35 9.0
S M8 Metric M8

T 0.26 Dia. Dia. 6.5
U M4 Metric M4

AB

C

R

K

P

M

C

T - DIA.
(4 TYP.)

E

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.12 130.0
B 4.33±0.01 110.0±0.25
C 1.840 46.75
D 1.73±0.04/0.02 44.0±1.0/0.5
E 1.46±0.04/0.02 37.0±1.0/0.5
F 1.42 36.0
G 1.25 31.8
H 1.18 30.0

J 1.10 28.0

K 1.08 27.5

E

G

Q

Single IGBTMOD™
H-Series Module

1200 Amperes/ 1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Ser vo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200HA-24J is a 1200V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating V

CM 1200 24

CE(sat)

Free-Wheel Diode
Heat Sinking

), 1200 Ampere Single

CES

Amperes Volts (x 50)

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM1200HA-24J
Single IGBTMOD™ H-Series Module

1200 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM1200HA-24J Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** (Tj ≤ 150°C) I
Maximum Collector Dissipation (Tc = 25°C) (Tj < 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Max. Mounting Torque M8 Terminal Screws – 95 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Mounting Torque G(E) Terminal M4 – 15 in-lb
Module Weight (T ypical) – 1600 Grams
Isolation Voltage, Main Terminal to Base Plate, AC 1 Min. V

iso

–40 to +150 °C
–40 to +125 °C

1200 Volts

±20 Volts

1200 Amperes

2400* Amperes

1200 Amperes

2400* Amperes

5800 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 6 mA

CES

, VCE = 0V – – 0.5 µA

CES

IC = 120mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 1200A, VGE = 15V, Tj = 25°C – 2.4 3.1 Volts

IC = 1200A, VGE = 15V, Tj = 125°C – 2.5 – Volts
Total Gate Charge Q
Emitter Current Voltage** V

G

EC

VCC = 600V, IC = 1200A, VGE = 15V – 5000 – nC

IE = 1200A, VGE = 0V – – 3.7 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Time Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V – – 70 nF

VCC = 600V, IC = 1200A, – – 600 ns

V

= V

GE1

= 15V, – – 1800 ns

GE2

RG = 3.3Ω, Resistive – – 1200 ns

Load Switching Operation – – 1500 ns
IE = 1200A, diE/dt = –2400A/µs – – 300 ns
IE = 1200A, diE/dt = –2400A/µs – 9.0 – µC

– – 200 nF

– – 40 nF

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case** R
Thermal Resistance, Junction to Case** R
Contact Thermal Resistance R

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Q Per IGBT – – 0.022 °C/W

th(j-c)

R Per FWDi – – 0.050 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – – 0.018 °C/W

rating.

j(max)

2

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

VCE, (VOLTS)

I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

2400

0246810

1600

2000

1200

800

400

0

9

15

Tj = 25°C

VGE = 20V

8

10

11

12

VGE, (VOLTS)

I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

2400

2000

048121620

1600

1200

800

400

0

IC, (AMPERES)

V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

0 500 1000 1500 2500

4

3

2

1

0

VGE = 15V

Tj = 25°C
T

j

= 125°C

2000

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

048121620

8

6

4

2

0

Tj = 25°C

IC = 480A

IC = 2400A

IC = 1200A

1.0 1.5 2.0 2.5 3.0 3.5

10

2

VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

10

4

I

E

, (AMPERES)

Tj = 25°C

VCE, (VOLTS)

C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

0

10

2

10

3

10

2

10

1

10

0

VGE = 0V

10

1

C

ies

C

oes

C

res

IE, (AMPERES)

t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

I

rr

, (AMPERES)

t

rr

I

rr

di/dt = -2400A/µsec
T

j

= 25°C

10

3

10

1

10

3

10

4

10

2

10

1

10

3

10

2

10

1

10

2

QG, (nC)

V

GE

, (VOLTS)

GATE CHARGE, V

GE

(TYPICAL)

20

0 2000 4000 6000

16

12

8

4

0

8000

VCC = 600V

VCC = 400V

COLLECTOR CURRENT, IC, (AMPERES)

10

1

10

2

10

4

10

3

10

4

10

2

10

3

10

1

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= ±15V

R

G

= 3.3 Ω

T

j

= 125°C

t

f

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCE = 10V

Tj = 25°C
T

j

= 125°C

IC = 1200A

CM1200HA-24J
Single IGBTMOD™ H-Series Module

1200 Amperes/1200 Volts

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM1200HA-24J
Single IGBTMOD™ H-Series Module

1200 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.022°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.05°C/W

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

4