C&H Technology CM1200DB-34N User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

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Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM1200DB-34N

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A

DD

K (4 TYP)

42

B

C

3

E1

G1 G2

S

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.12±0.02 130.0±0.5

B 5.51±0.02 140.0±0.5

C 4.88±0.01 124.0±0.25

D 2.24±0.01 57.0±0.25

E 1.18±0.008 30.0±0.2

F 0.79±0.004 20.0±0.1

G 2.09±0.008 53.0±0.2

H 1.57±0.008 40.0±0.2

J 1.73±0.008 44.0±0.2

K M8 Metric M8

L 0.28 Dia. 7.0 Dia.

M M4 Metric M4

N 2.17±0.01 55.2±0.3

Z

AA

C1 C2

H

GAB

N

T

F

E

1

E2

M (3 TYP)

J

Dimensions Inches Millimeters

P 1.50+0.04/-0.0 38.0+1.0/-0.0

Q 0.2±0.008 5.0±0.2

R 0.65 Min. 16.5 Min.

S 0.30 Min. 7.7 Min.

T 0.47±0.008 11.85±0.2

U 1.16±0.02 29.5±0.5

V 0.45±0.008 11.5±0.2

W 0.55±0.008 14.0±0.2

X 1.10+0.04/-0.0 28.0+1.0/-0.0

Y 1.38±0.008 35.0±0.2

Z 0.63±0.008 16.0±0.2

AA 0.71±0.008 18.0±0.2

AB 2.24±0.008 57.0±0.2

L
(6 PLACES)

R

Q

Q

Y

V

4(E1)

E1

P

G1

C1

3(C1)

U

W

X

2(C2)

1(E2)

C2

G2

E2

Dual IGBTMOD™
HVIGBT Module

1200 Amperes/1700 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

£ Low Drive Power
£ Low V
£ Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200DB-34N is a 1700V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 1200 34

CE(sat)

), 1200 Ampere Dual

V

CES

01/11 Rev. 0

1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module

1200 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM1200DB-34N Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Operating Temperature T

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, Tc = 80°C) IC 1200 Amperes

Peak Collector Current (Pulse) ICM*1 2400 Amperes

Emitter Current (Tc = 25°C)*2 IE 1200 Amperes

Emitter Surge Current (Pulse)*2 IEM*1 2400 Amperes

Maximum Power Dissipation (Tc = 25°C, IGBT Part)*3 PC 6900 Watts

Max. Mounting Torque M8 Main Terminal Screws – 177 in-lb

Max. Mounting Torque M6 Mounting Screws – 53 in-lb

Max. Mounting Torque M4 Auxiliary Terminal Screws – 27 in-lb

Module Weight (Typical) – 1.3 kg

Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.) V

Maximum Short Circuit Pulse Width t
(VCC = 1200V, V

*1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Junction temperature (Tj) should not exceed T

≤ 1700V, VGE = 15V, Tj = 125°C)

CES

rating (150°C).

j(max)

opr(max)

rating (125°C).

-40 to 125 °C

stg

-40 to 125 °C

opr

1700 Volts

CES

±20 Volts

GES

4000 Volts

iso

10 µs

psc

2

01/11 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module

1200 Amperes/1700 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

IC = 1200A, VGE = 15V, Tj = 125°C*4 – 2.40 – Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 850V, IC = 1200A, VGE = 15V – 6.8 – µC

Emitter-Collector Voltage VEC*2 IE = 1200A, VGE = 0V, Tj = 25°C*4 – 2.60 3.30 Volts

IE = 1200A, VGE = 0V, Tj = 125°C*4 – 2.30 – Volts

Turn-On Delay Time t

Turn-On Rise Time tr VGE = ±15V, R

Turn-On Switching Energy Eon Tj = 125°C, Ls = 150nH, Inductive Load – 380 – mJ/P

Turn-Off Delay Time t

Turn-Off Fall Time tf VGE = ±15V, R

Turn-Off Switching Energy E

Reverse Recovery Time trr*2 VCC = 850V, IC = 1200A, – 1.00 – µs

Reverse Recovery Current Irr*2 VGE = ±15V, R

Reverse Recovery Charge Qrr*2 Tj = 125°C, Ls = 150nH, – 300 – µC

Reverse Recovery Energy E

*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

IC = 120mA, VCE = 10V 6.0 7.0 8.0 Volts

GE(th)

VGE = V

GES

IC = 1200A, VGE = 15V, Tj = 25°C*4 – 2.15 2.80 Volts

CE(sat)

– 176 – nF

ies

VCE = 10V, f = 100kHz, VGE = 0V – 9.6 – nF

oes

– 2.8 – nF

res

VCC = 850V, IC = 1200A, – 1.00 – µs

d(on)

VCC = 850V, IC = 1200A, – 1.20 – µs

d(off)

Tj = 125°C, Ls = 150nH, Inductive Load – 360 – mJ/P

off

*2 Inductive Load – 220 – mJ/P

rec

, VGE = 0V – – 4 mA

CES

, VCE = 0V – – 0.5 µA

GES

= 1.3Ω, – 0.40 – µs

G(on)

= 3.3Ω, – 0.30 – µs

G(off)

= 1.3Ω, – 560 – Amperes

G(on)

01/11 Rev. 0

3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module

1200 Amperes/1700 Volts

Thermal Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance, Case to Fin R

Q IGBT Part, 1/2 Module – – 0.018 °C/W

th(j-c)

D FWDi Part, 1/2 Module – – 0.040 °C/W

th(j-c)

th(c-f)

λ

= 1W/m•K, 1/2 Module – 0.016 – °C/W

grease

Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Comparative Tracking Index CTI – 600 – – –

Clearance Distance in Air da – 9.5 – – mm

Creepage Distance Along Surface ds – 15.0 – – mm

Internal Inductance L

Internal Lead Resistance R

IGBT Part – 30 – nH

C-E(int)

TC = 25°C – 0.28 – mΩ

C-E(int)

4

01/11 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR CURRENT, I

, (AMPERES)

01

61

REVERSE RECOVERY CHARGE, Q

, (μC)

CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module

1200 Amperes/1700 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

2400

Tj = 125°C

2000

VGE = 20V

1600

C

1200

800

400

0

0635412

COLLECTOR-EMITTER VOLTAGE, V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

5

VGE = 15V

T

= 25°C

, (VOLTS)

4

CES

j

= 125°C

T

j

3

2

1

COLLECTOR-EMITTER VOLTAGE, V

0

024001200 1600 2000400 800

COLLECTOR CURRENT, IC, (AMPERES)

12V

15V

CE(sat)

10V

8V

, (VOLTS)

FREE-WHEEL DIODE FORWARD

CHARACTERISTICS (TYPICAL)

5

Tj = 25°C

= 125°C

T

, (VOLTS)

4

CES

j

3

2

1

COLLECTOR-EMITTER VOLTAGE, V

0

024001200 1600 2000400 800

EMITTER CURRENT, IE, (AMPERES)

CAPACITANCE VS.

COLLECTOR-EMITTER VOLTAGE

3

10

, (pF)

res

2

10

, C

oes

, C

ies

1

10

VGE = 15V

CAPACITANCE, C

f = 100kHz

= 25°C

T

j

0

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

(TYPICAL)

0

10

TRANSFER CHARACTERISTICS

(TYPICAL)

2400

V

= 20V

CE

2000

1600

, (AMPERES)

C

Tj = 25°C

= 125°C

T

j

1200

800

400

COLLECTOR CURRENT, I

0

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

1

10

C

ies

0

10

-1

C

oes

C

res

1

10

10

SWITCHING TIME, (µs)

2

10

-2

10

2

10

COLLECTOR CURRENT, IC, (AMPERES)

t

t

d(on)

d(off)

(TYPICAL)

3

10

0

t

r

t

f

VCC = 850V
V

= ±15V

GE

R

= 1.3Ω

G(on)

= 125°C

T

j

Inductive Load

10

2824

4

rr

01/11 Rev. 0

FREE-WHEEL DIODE REVERSE RECOVERY

CHARGE CHARACTERISTICS (TYPICAL)

500

VCC = 850V

= ±15V

V

GE

400

R

G(on)

= 125°C

T

j

= 1.3Ω

300

200

100

0

024001200 1600 2000400 800

EMITTER CURRENT, IE, (AMPERES)

REVERSE BIAS SAFE OPERATING AREA

(RBSOA)

3000

2500

2000

, (AMPERES)

C

1500

VCC ≤ 1200V

= ±15V

V

1000

COLLECTOR CURRENT, I

GE

≥ 3.3Ω

R

G(off)

= 125°C

T

j

500

Module
Chip

0

0 20001500500 1000

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

GATE CHARGE, V

20

IC = 1200A

= 850V

V

CC

= 25°C

T

16

, (VOLTS)

GE

j

12

8

4

GATE-EMITTER VOLTAGE, V

0

0246810

GATE CHARGE, Q

G

GE

, (μC)

5

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

SWITCHING ENERGIES, (mJ/PULSE)

CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module

1200 Amperes/1700 Volts

= ±15V

= 1.3Ω
= 3.3Ω

= 125°C

E

on

E

off

E

rec

HALF-BRIDGE

(TYPICAL)

SWITCHING ENERGY CHARACTERISTICS

1200

VCC = 850V
V

GE

1000

R

G(on)

R

G(off)

T

800

j

Inductive Load

600

400

200

0

0 400 800 1200 1600 2000

COLLECTOR CURRENT, IC, (AMPERES)

2400

= 1200A

= ±15V

GE

= 125°C

E

on

E

off

E

rec

GATE RESISTANCE, R

HALF-BRIDGE

(TYPICAL)

SWITCHING ENERGY CHARACTERISTICS

2000

VCC = 850V
I

C

V

1600

T

j

Inductive Load

1200

800

400

SWITCHING ENERGIES, (mJ/PULSE)

0

0246810

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

th(j-c')

1.2

1.0

0.8

0.6

• (NORMALIZED VALUE)

0.4

th

= R

th

Z

0.2

, (Ω)

G

12

10

0

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-2

-3

10

-1

10

TIME, (s)

Single Pulse

= 25°C

T

C

Per Unit Base =
R

=

th(j-c)

0.018°C/W
(IGBT)
R

=

th(j-c)

0.040°C/W
(FWDi)

0

10

1

10

6

01/11 Rev. 0