C&H Technology CM100TX-24S User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM100TX-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

AE

DETAIL "A"

AJ

AH

AG

DETAIL "B"

2

A
E

F

G

K

KQ

JMMM

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

53

54

N

K

55

(4 PLACES)

K

56

57

L

58

59

K

60

K

61

V

12345678910111213141516171819202122

W

U

X

P(54~56)

N(59~61)

Caution: Each (three) pin terminal of P/N/P1/N1/U/V/W is connected in the module,
however, all three pins should be used for external wiring.

LHLLLL

UP(1)

G

E

UP(2)

U(48~50) V(42~44) W(36~38)

G

UN(5)

K

K

D

DETAIL "A"

K

DETAIL "B"

VP(9)

G

E

VP(10)

G

VN(13)

K

K

30

K

29

K

28

27

R B

L

26

25

K

24

K

23

KKKKKK

Tolerance Otherwise Specified (mm)

Y

WP(17)

G

E

WP(18)

WN(21)

G

EWN(22)EVN(14)EUN(6)

AD

K

AC

AA

AB

C

Z

S

P

AH

T

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

P1(28~30)

TH

TH1
(31)

(32)

N1(23~25)

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.49 114.05
E 4.33±0.02 110.0±0.5
F 3.9 99.0
G 3.72 94.5
H 0.59 15.0
J 0.96 24.52
K 0.15 3.81
L 0.45 11.43
M 0.6 15.24
N 0.22 Dia. 5.5 Dia.
P 2.13 54.2
Q 0.30 7.75
R 1.97±0.02 50.0±0.5
S 2.26 57.5

Dimensions Inches Millimeters

U 0.16 4.06
V 0.46 11.66
W 0.14 3.75
X 0.14 3.5
Y 0.03 0.8
Z 0.28 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.03 0.65
AD 0.05 1.15
AE 0.29 7.4
AF 0.047 1.2
AG 0.49 12.5
AH 0.12 3.0
AJ 0.17 Dia. 4.3 Dia.
AK 0.102 Dia. 2.6 Dia.
AL 0.088 Dia. 2.25 Dia.

T 0.165 4.2

Six IGBTMOD™
NX-S Series Module

100 Amperes/1200 Volts

AF

AK
AL

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM100TX-24S is a 1200V (V
100 Ampere Six IGBTMOD™ Pow­er Module.

Type Current Rating
Amperes Volts (x 50)

CM 100 24

CE(sat)

Free-Wheel Diode

Heat Sinking

),

CES

V

CES

107/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100TX-24S
Six IGBTMOD™ NX-S Series Module

100 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

1200 Volts

CES

±20 Volts

GES

Collector Current (DC, TC = 119°C)*2 IC 100 Amperes

Collector Current (Pulse)*3 I

Total Power Dissipation (TC = 25°C)

Emitter Current (TC = 25°C)

*2,*4

P

*2,*4

I

Emitter Current (Pulse)*3 I

200 Amperes

CRM

750 Watts

tot

*1

100 Amperes

E

*1

200 Amperes

ERM

Module

Characteristics Symbol Rating Units

Maximum Junction Temperature T

Maximum Case Temperature*2 T

Operating Junction Temperature T

Storage Temperature T

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T

j(max)

j(max)

) rating.

rating.

0 0

20.2

29.5

Each mark points to the center position of each chip.

Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

2500 Volts

ISO

20.6033.7

52 51 50 49 48 47 46 45 44 4342 41 40 39 38 37 36 35 34 33 32 31

53

Di

54

UP

55

56

Tr

57

UP

58

59

60

61

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

51.6

64.7

82.6

95.7

104.5

Di

Di

VP

UN

Tr

Tr

VP

UN

Di

Di

WP

VN

Tr

Tr

WP

VN

30

Di

29

WN

Th

28

Tr

27

26

WN

25

24

23

LABEL SIDE

24.1

2 07/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100TX-24S
Six IGBTMOD™ NX-S Series Module

100 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 100A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts

IC = 100A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 100A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts

IC = 100A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V — 233 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 100A, VGE = ±15V, — — 200 ns

Turn-off Delay Time t

Fall Time tf — — 300 ns

Emitter-Collector Voltage V

(Terminal) IE = 100A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts

IE = 100A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts

Emitter-Collector Voltage V

(Chip) IE = 100A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts

IE = 100A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on switching Energy per Pulse Eon VCC = 600V, IC = IE = 100A, VGE = ±15V — 8.6 — mJ

Turn-off switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 0 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 10mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 100A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts

CE(sat)

IC = 100A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts

CE(sat)

— — 10 nF

ies

VCE = 10V, VGE = 0V — — 2.0 nF

oes

— — 0.17 nF

res

— — 300 ns

d(on)

RG = 6.2Ω, Inductive Load — — 600 ns

d(off)

*1

IE = 100A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts

EC

*1

IE = 100A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts

EC

*1

VCC = 600V, IE = 100A, VGE = ±15V — — 300 ns

rr

*1

RG = 6.2Ω, Inductive Load — 5.3 — µC

rr

RG = 6.2Ω, Tj = 150°C — 10.7 — mJ

off

*1

Inductive Load — 10.2 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 2.2 mΩ

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

*2

0 0

20.2

29.5

20.6033.7

52 51 50 49 48 47 46 45 44 4342 41 40 39 38 37 36 35 34 33 32 31

53

Di

54

UP

55

56

Tr

57

UP

58

59

60

61

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

Each mark points to the center position of each chip.

Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor

51.6

64.7

82.6

95.7

104.5

Di

Di

VP

UN

Tr

Tr

VP

UN

Di

Di

WP

VN

Tr

Tr

WP

VN

30

Di

29

WN

Th

28

Tr

27

26

WN

25

24

23

LABEL SIDE

24.1

307/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100TX-24S
Six IGBTMOD™ NX-S Series Module

100 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)

NTC Thermistor Part

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R25 TC = 25°C*2 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

Approximate by Equation*6 — 3375 — K

(25/50)

= 493Ω -7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C*2 — — 10 mW

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*2 R

Thermal Resistance, Junction to Case*2 R

Contact Thermal Resistance, R

Case to Heatsink*2 Per 1 Module

Q IGBT Part, Per 1/6 Module — — 0.20 K/W

th(j-c)

D FWDi Part, Per 1/6 Module — — 0.29 K/W

th(j-c)

Thermal Grease Applied, — 0.015 — K/W

th(c-f)

*7

Mechanical Characteristics

Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb

Creepage Distance ds Terminal to Terminal 10.28 — — mm

Terminal to Baseplate 14.27 — — mm

Clearance da Terminal to Terminal 10.28 — — mm

Terminal to Baseplate 12.33 — — mm

Weight m — 300 — Grams

Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm

Recommended Operating Conditons, Ta = 25°C

DC Supply Voltage VCC Applied Across P-N/P1-N1 Terminals — 600 850 Volts

Gate-Emitter Drive Voltage V

G*P-Es*P/G*N-Es*N Terminals

External Gate Resistance RG Per Switch 6.2 — 62 Ω

*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

*6 B

(25/50)

R

R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

= In(

R

25

)/( 1 –

50 T25 T50

MOUNTING SIDE

1

)

MOUNTING SIDE

+ : CONVEX

– : CONCAVE

X

Applied Across 13.5 15.0 16.5 Volts

GE(on)

Y

MOUNTING

SIDE

0 0

20.2

29.5

Each mark points to the center position of each chip.

Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor

20.6033.7

52 51 50 49 48 47 46 45 44 4342 41 40 39 38 37 36 35 34 33 32 31

53

Di

54

UP

55

56

Tr

57

UP

58

59

60

61

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

51.6

64.7

82.6

Di

Di

VP

UN

Tr

Tr

VP

UN

Di

Di
VN

VN

Di

WP

WN

Tr

Tr

Tr

WP

WN

– : CONCAVE

+ : CONVEX

95.7

104.5

Th

30

29

28

27

26

25

24

23

LABEL SIDE

24.1

4 07/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100TX-24S
Six IGBTMOD™ NX-S Series Module

100 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(CHIP - TYPICAL)

200

150

, (AMPERES)

C

100

Tj =
25°

C

15

VGE = 20V

13.5

50

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

(CHIP - TYPICAL)

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

SATURATION VOLTAGE CHARACTERISTICS

3.5

, (VOLTS)

CE(sat)

3.0

2.5

2.0

12

11

1.5

10

9

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

2

10

, (nF)

1

10

res

, C

oes

, C

ies

0

10

-1

10

CAPACITANCE, C

COLLECTOR-EMITTER

(CHIP - TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

0

COLLECTOR CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

VGE = 0V

CE

C

C

C

ies

oes

res

20010050 150

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

3

10

2

10

1

10

SWITCHING TIME, (ns)

COLLECTOR-EMITTER

(CHIP - TYPICAL)

Tj = 25°C

IC = 200A

IC = 100A

IC = 40A

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

VCC = 600V
V

GE

R

= 6.2Ω

G

T

= 125°C

j

Inductive Load

= ±15V

(TYPICAL)

t

f

t

d(on)

t

r

t

d(off)

0

10

0 1.0 0.5 2.51.5 2.0 3.0

EMITTER-COLLECTOR VOLTAGE, V

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

VCC = 600V
V

GE

R

= 6.2Ω

G

T

= 150°C

j

2

Inductive Load

10

1

10

SWITCHING TIME, (ns)

0

10

0

10

= ±15V

(TYPICAL)

t

f

t

d(on)

t

r

1

10

t

d(off)

, (VOLTS)

EC

2

10

-2

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

0

10

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

10

t

t

d(on)

t

r

1

10

GATE RESISTANCE, R

1

d(off)

t

f

VCC = 600V
V

= ±15V

GE

I

= 100A

C

T

= 125°C

j

Inductive Load

, (Ω)COLLECTOR CURRENT, IC, (AMPERES)

G

2

10

2

10

0

10

0

10

COLLECTOR CURRENT, IC, (AMPERES)

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

1

10

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

t

d(on)

t

r

1

10

GATE RESISTANCE, R

t

d(off)

t

f

VCC = 600V
V

= ±15V

GE

I

= 100A

C

T

= 150°C

j

Inductive Load

, (Ω)

G

2

10

2

10

507/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100TX-24S
Six IGBTMOD™ NX-S Series Module

100 Amperes/1200 Volts

REVERSE RECOVERY CHARACTERISTICS

3

10

VCC = 600V
V

GE

R

= 6.2Ω

G

(ns)

rr

T

= 125°C

j

Inductive Load

(A), t

rr

2

10

REVERSE RECOVERY, I

1

10

0

10

CHARACTERISTICS (TYPICAL)

2

10

V

CC

V

GE

R

, (mJ)

rr

, (mJ)

off

, E

on

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

10

= 6.2Ω

G

T

= 125°C

j

1

10

0

10

-1
0

10

COLLECTOR CURRENT, IC, (AMPERES)

CHARACTERISTICS (TYPICAL)

2

10

V

CC

V

GE

I

= 100A

C

, (mJ)

rr

, (mJ)

, E

SWITCHING ENERGY, E

T

= 150°C

off

on

j

1

10

REVERSE RECIVERY ENERGY, E

0

10

0

10

(TYPICAL)

= ±15V

I

rr

t

rr

1

10

HALF-BRIDGE SWITCHING

= 600V
= ±15V

E

on

E

off

E

rr

1

10

EMITTER CURRENT, I

HALF-BRIDGE SWITCHING

= 600V
= ±15V

E

on

E

off

E

rr

1

10

GATE RESISTANCE, RG, (Ω)

, (AMPERES)

E

REVERSE RECOVERY CHARACTERISTICS

3

10

VCC = 600V
V

= ±15V

GE

R

= 6.2Ω

(ns)

rr

(A), t

rr

REVERSE RECOVERY, I

2

10

, (mJ)

, (mJ)

off

, E

on

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

2

10

th(j-c')

• (NORMALIZED VALUE)

= R
Z

2

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10

G

T

= 150°C

j

Inductive Load

I

rr

t

2

10

1

10

2

10

rr

1

10

0

10

-1

10

10

-1

10

-2

10

th

th

-3

10

rr

0

10

EMITTER CURRENT, IE, (AMPERES)EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

VCC = 600V
V

= ±15V

GE

R

= 6.2Ω

G

T

= 150°C

j

E

on

E

off

E

rr

0

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, I

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

10-310

0

-2

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

th(j-c)

0.20°C/W
(IGBT)
R

=

th(j-c)

0.29°C/W
(FWDi)

(TYPICAL)

1

10

1

10

(MAXIMUM)

-1

10

-5

10

TIME, (s)

, (AMPERES)

E

10

10

20

15

, (VOLTS)

GE

GATE CHARGE VS. V

IC = 100A
V

= 600V

CC

GE

10

5

GATE-EMITTER VOLTAGE, V

2

10

2

10

0

1

10

10

10

-4

10

-3

10

0

0

CHARACTERISTICS (TYPICAL)

2

10

V

= 600V

CC

V

= ±15V

GE

I

= 100A

C

, (mJ)

rr

, (mJ)

off

, E

on

SWITCHING ENERGY, E

-1

-2

-3

T

= 125°C

j

1

10

REVERSE RECIVERY ENERGY, E

0

10

0

10

100 200 300 400

GATE CHARGE, QG, (nC)

HALF-BRIDGE SWITCHING

E

on

E

off

E

rr

1

10

GATE RESISTANCE, RG, (Ω)

2

10

6 07/11 Rev. 2