C&H Technology CM100TU-12F User Manual

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CM100TU-12F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

S - NUTS (5 TYP)

T

MEASURING

POINT

W - THICK x X - WIDE

EB

C

TAB (12 PLACES)

C

P

GUP

RTC

EUP

U

GUN

RTC RTC

EUN

N

GUP EUP

L

J

K

CM

N

P

GVP

EVPLGWP

N

GUN

EUN

U

LLNNAL

GVP

EVP

GVN

EVN

NL

GVN EVN EWN

V

J

J

D

RTC

V

K

R

EWP

GWN

W

GWP

EWP

GWN

EWN

M

RTC

W

RTC

T (4 TYP.)

P

Q

V

H

G

F

A

TC
MEASURING
POINT

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.02 102.0
B 3.58 91.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.15±0.01 80.0±0.25
E 2.91±0.01 74.0±0.25
F 0.16 4.0
G 1.02 26.0
H 0.31 8.1

J 0.79 20.0
K 0.39 10.0
L 0.43 11.0

Dimensions Inches Millimeters

M 0.47 11.85
N 0.75 19.1
P 0.74 18.7
Q 1.55 39.3
R 0.05 1.25
SM4 M4

T 0.22 Dia. 5.5 Dia.
U 0.02 0.5
V 0.12 3.05
W 0.02 0.5
X 0.110 2.79

Trench Gate Design
Six IGBTMOD™

100 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse­connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM100TU-12F is a
600V (V
IGBT IGBTMOD™ Power Module.

Type Amperes Volts (x 50)

CM 100 12

CE(sat)

Free-Wheel Diode
Heat Sinking

), 100 Ampere Six-

CES

Current Rating V

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM100TU-12F
Trench Gate Design Six IGBTMOD™

100 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM100TU-12F Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M4 Main Terminal – 15 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 570 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

iso

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts
100 Amperes

200* Amperes

100 Amperes

200* Amperes

350 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES VGE

GE(th)

CE(sat)

G

EC

VCE = V

, VGE = 0V ––1mA

CES

= V

, VCE = 0V ––20 µA

GES

IC = 10mA, VCE = 10V 5 6 7 Volts

IC = 100A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts

IC = 100A, VGE = 15V, Tj = 125°C – 1.6 – Volts

VCC = 300V, IC = 100A, VGE = 15V – 620 – nC

IE = 100A, VGE = 0V ––2.6 Volts

rating.

j(max)

2

2

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM100TU-12F
Trench Gate Design Six IGBTMOD™

100 Amperes/600 Volts

Dynamic Electrical Characteristics, Tj = 2 5 °C unless othe rwise specified

Characteristics Symbol T est Conditions Min. T yp. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V ––1.8 nf

VCC = 300V, IC = 100A, ––100 ns

V

= V

GE1

= 15V, ––80 ns

GE2

RG = 6.3⍀, ––300 ns

Inductive Load ––250 ns

Switching Operation ––150 ns

IE = 100A – 1.9 – µC

––27 nf

––1nf

Thermal and Mechanical Characteristics, Tj = 2 5 °C unless otherwise specified

Characteristics Symbol T est Conditions Min. T yp. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Q Per IGBT 1/6 Module, Tc Reference – 0.35 °C/W

th(j-c)

Point per Outline Drawing

D Per FWDi 1/6 Module, Tc Reference ––0.70 °C/W

th(j-c)

Point per Outline drawing

'Q Per IGBT 1/6 Module, – 0.23 °C/W

th(j-c)

Tc Reference Point Under Chip

th(c-f)

Per Module, Thermal Grease Applied – 0.018 – °C/W

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM100TU-12F
Trench Gate Design Six IGBTMOD™

100 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

200

160

, (AMPERES)

C

120

Tj = 25

o

C

15

VGE = 20V

80

40

COLLECTOR CURRENT, I

0

01234

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

11

7.5

(TYPICAL)

10

9.5

9

8.5

8

Tj = 25°C

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 .5 1.0 1.5 2.52.0 3.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

2

10

, (ns)

rr

1

10

REVERSE RECOVERY TIME, t

0

10

0

10

(TYPICAL)

1

EMITTER CURRENT, IE, (AMPERES)

10

t

rr

I

rr

VCC = 300V
V

GE

R

= 6.3 Ω

G

T

= 25°C

j

Inductive Load

, (VOLTS)

EC

= ±15V

SATURATION VOLTAGE CHARACTERISTICS

2.5

)

2.0

, (VOLTS

CE(sat)

1.5

1.0

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE, V

0

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

10

2

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

10

8

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

10

2

10

0

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

0 40 80 120 160

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

CE

VGE = 0V

C

ies

C

oes

C

res

-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

1

10

GE

IC = 100A

VCC = 200V

VCC = 300V

0

300 600 900

GATE CHARGE, QG, (nC)

200

10

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

VCC = 300V
V

= ±15V

GE

R

= 6.3 Ω

G

T

= 125°C

j

2

Inductive Load

10

1

10

SWITCHING TIME, (ns)

0

10

2

0

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

10-310

1

th(j-c)

10

Per Unit Base
R

th(j-c)

R

th(j-c)

0

10

Single Pulse
T

= 25°C

C

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(TYPICAL)

t

d(off)

t

d(on)

TRANSIENT THERMAL

(IGBT & FWDi)

-2

= 0.35°C/W (IGBT)
= 0.7°C/W (FWDi)

TIME, (s)

IC = 100A

IC = 40A

t

f

t

r

1

10

-1

10

-5

10

IC = 200A

0

10

-4

10

2

10

1

10

-1

10

-2

10

-3

10

-3

10

4