C&H Technology CM100RX-24S User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM100RX-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

AN

AQ

AX

AL

TH2
(10)

AY

DETAIL "B"

AR

AT

AL

AL

AW

AP

12

11

10

N M L K B

9

8

7

6

5

AB
(6 PLACES)

DETAIL "B"

TH1
(11)

NTC

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2

The tolerance of size between
terminals is assumed to ±0.4

AZ

AH

AS

AD

AC

AU

DETAIL "A"

AH

AL

AK

R

T

S

R

U

V

AF
AG

C

BA
AE

AJ

H

J

QR

P

Q

P

H

X Y Z Z

P(35)

UP(34)

G

E

G

UP(33)

UN(30)

B(4)

GB(6)

EB(5)

N(36)

35

36

J

U(1) V(2) W(3)

AM

34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13

AA(4 PLACES)

1 2 3 4

P W

VP(26)

G

E

VP(25)

G

VN(22)

ALAL

ALALAL

AMAMAM

AM
A
D
E

F
G

DETAIL "A"

RQ

WP(18)

G

E

WP(17)

G

WN(14)

EWN(13)EVN(21)EUN(29)

Z

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.39 136.9
B 3.03 77.1
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 4.79 121.7
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.83 21.14
J 0.37 6.5
K 2.44 62.0
L 2.26 57.5
M 1.97±0.02 50.0±0.5
N 1.53 39.0
P 0.24 6.0
Q 0.48 12.0
R 0.67 17.0
S 1.53 39.0
T 0.87 22.0
U 0.55 14.0
V 0.54 13.64
W 0.33 8.5
X 0.53 13.5
Y 0.81 20.71
Z 0.9 22.86
AA 0.22 Dia. 5.5 Dia.

Dimensions Inches Millimeters

AB M5 M5
AC 0.12 3.0
AD 0.51 13.0
AE 0.102 Dia. 2.6 Dia.
AF 0.21 5.4
AG 0.49 12.5
AH 0.81 20.5
AJ 0.088 Dia. 2.25 Dia.
AK 0.59 15.00
AL 0.15 3.81
AM 0.45 11.43
AN 0.14 3.5
AP 0.75 19.05
AQ 0.05 1.2
AR 0.03 0.8
AS 0.27 7.0
AT 0.77 19.68
AU 0.49 12.5
AV 0.60 15.24
AW 0.46 11.66
AX 0.04 1.15
AY 0.02 0.65
AZ 0.29 7.4
BA 0.17 Dia. 4.3 Dia.

Six IGBTMOD™ + Brake
NX-S Series Module

100 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
and a seventh IGBT with free­wheel diode for dynamic braking.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM100RX-24S is a 1200V (V
100 Ampere Six-IGBTMOD™ +
Brake Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 100 24

CE(sat)

Free-Wheel Diode

Heat Sinking

),

CES

V

CES

106/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module

100 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

1200 Volts

CES

±20 Volts

GES

Collector Current (DC, TC = 119°C)*2 IC 100 Amperes

Collector Current (Pulse)*3 I

Total Power Dissipation (TC = 25°C)

Emitter Current (TC = 25°C)

*2,*4

P

*2,*4

I

Emitter Current (Pulse)*3 I

200 Amperes

CRM

750 Watts

tot

*1

100 Amperes

E

*1

200 Amperes

ERM

Brake Part IGBT/FWDi

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)*2 IC 50 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Repetitive Peak Reverse Voltage (VGE = 0V) V

Forward Current (TC = 25°C)

*2,*4

I

Forward Current (Pulse)*3 I

1200 Volts

CES

±20 Volts

GES

100 Amperes

CRM

425 Watts

tot

1200 Volts

RRM

*1

50 Amperes

F

*1

100 Amperes

FRM

Module

Characteristics Symbol Rating Units

Maximum Junction Temperature T

Maximum Case Temperature*2 T

Operating Junction Temperature T

Storage Temperature T

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T

j(max)

j(max)

) rating.

rating.

LABEL SIDE

0 0

18.8

19.8

25.6

26.6

28.2

29.2

35.0

36.0

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

2500 Volts

ISO

10 1.6

22.5

33.6044.7

55.8

34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13

Tr

35

36

Each mark points to the center position of each chip.

Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Th: NTC Thermistor

Tr

UP

VP

Tr

Tr

UN

Di

Di

UP

VN

VP

Di

Di

UN

VN

1 2 3 4

90.5

79.4

99.4

105.2

Di

Tr

Br

WP

Tr

WN

Th

Di

WP

Di

WN

Tr
Br

12

18.8

11

25.6

10

26.9

9

28.2

8

35.0

7

6

40.5

5

2 06/11 Rev. 2