6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
CM100RX-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
AN
AQ
AX
AL
TH2
(10)
AY
DETAIL "B"
AR
AT
AL
AL
AW
AP
12
11
10
N M L K B
9
8
7
6
5
AB
(6 PLACES)
DETAIL "B"
TH1
(11)
NTC
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2
The tolerance of size between
terminals is assumed to ±0.4
AZ
AH
AS
AD
AC
AU
DETAIL "A"
AH
AL
AK
R
T
S
R
U
V
AF
AG
C
BA
AE
AJ
H
J
QR
P
Q
P
H
X Y Z Z
P(35)
UP(34)
G
E
G
UP(33)
UN(30)
B(4)
GB(6)
EB(5)
N(36)
35
36
J
U(1) V(2) W(3)
AM
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
AA(4 PLACES)
1 2 3 4
P W
VP(26)
G
E
VP(25)
G
VN(22)
ALAL
ALALAL
AMAMAM
AM
A
D
E
F
G
DETAIL "A"
RQ
WP(18)
G
E
WP(17)
G
WN(14)
EWN(13)EVN(21)EUN(29)
Z
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.39 136.9
B 3.03 77.1
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 4.79 121.7
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.83 21.14
J 0.37 6.5
K 2.44 62.0
L 2.26 57.5
M 1.97±0.02 50.0±0.5
N 1.53 39.0
P 0.24 6.0
Q 0.48 12.0
R 0.67 17.0
S 1.53 39.0
T 0.87 22.0
U 0.55 14.0
V 0.54 13.64
W 0.33 8.5
X 0.53 13.5
Y 0.81 20.71
Z 0.9 22.86
AA 0.22 Dia. 5.5 Dia.
Dimensions Inches Millimeters
AB M5 M5
AC 0.12 3.0
AD 0.51 13.0
AE 0.102 Dia. 2.6 Dia.
AF 0.21 5.4
AG 0.49 12.5
AH 0.81 20.5
AJ 0.088 Dia. 2.25 Dia.
AK 0.59 15.00
AL 0.15 3.81
AM 0.45 11.43
AN 0.14 3.5
AP 0.75 19.05
AQ 0.05 1.2
AR 0.03 0.8
AS 0.27 7.0
AT 0.77 19.68
AU 0.49 12.5
AV 0.60 15.24
AW 0.46 11.66
AX 0.04 1.15
AY 0.02 0.65
AZ 0.29 7.4
BA 0.17 Dia. 4.3 Dia.
Six IGBTMOD™ + Brake
NX-S Series Module
100 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
and a seventh IGBT with freewheel diode for dynamic braking.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM100RX-24S is a 1200V (V
100 Ampere Six-IGBTMOD™ +
Brake Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 100 24
CE(sat)
Free-Wheel Diode
Heat Sinking
),
CES
V
CES
106/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
1200 Volts
CES
±20 Volts
GES
Collector Current (DC, TC = 119°C)*2 IC 100 Amperes
Collector Current (Pulse)*3 I
Total Power Dissipation (TC = 25°C)
Emitter Current (TC = 25°C)
*2,*4
P
*2,*4
I
Emitter Current (Pulse)*3 I
200 Amperes
CRM
750 Watts
tot
*1
100 Amperes
E
*1
200 Amperes
ERM
Brake Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 125°C)*2 IC 50 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Repetitive Peak Reverse Voltage (VGE = 0V) V
Forward Current (TC = 25°C)
*2,*4
I
Forward Current (Pulse)*3 I
1200 Volts
CES
±20 Volts
GES
100 Amperes
CRM
425 Watts
tot
1200 Volts
RRM
*1
50 Amperes
F
*1
100 Amperes
FRM
Module
Characteristics Symbol Rating Units
Maximum Junction Temperature T
Maximum Case Temperature*2 T
Operating Junction Temperature T
Storage Temperature T
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
j(max)
j(max)
) rating.
rating.
LABEL SIDE
0 0
18.8
19.8
25.6
26.6
28.2
29.2
35.0
36.0
175 °C
j(max)
125 °C
C(max)
-40 to +150 °C
j(op)
-40 to +125 °C
stg
2500 Volts
ISO
10 1.6
22.5
33.6044.7
55.8
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
Tr
35
36
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Th: NTC Thermistor
Tr
UP
VP
Tr
Tr
UN
Di
Di
UP
VN
VP
Di
Di
UN
VN
1 2 3 4
90.5
79.4
99.4
105.2
Di
Tr
Br
WP
Tr
WN
Th
Di
WP
Di
WN
Tr
Br
12
18.8
11
25.6
10
26.9
9
28.2
8
35.0
7
6
40.5
5
2 06/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
100 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 100A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts
IC = 100A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 100A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 100A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V — 233 — nC
Turn-on Delay Time t
Rise Time tr VCC = 600V, IC = 100A, VGE = ±15V, — — 200 ns
Turn-off Delay Time t
Fall Time tf — — 300 ns
Emitter-Collector Voltage V
(Terminal) IE = 100A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts
IE = 100A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts
Emitter-Collector Voltage V
(Chip) IE = 100A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 100A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 100A, VGE = ±15V — 8.6 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse Err Inductive Load — 10.2 — mJ
Internal Lead Resistance R
Per Switch, TC = 25°C
Internal Gate Resistance rg — 0 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure on page 1 for chip location. The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 10mA, VCE = 10V 5.4 6 6.6 Volts
GE(th)
IC = 100A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts
CE(sat)
IC = 100A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
CE(sat)
— — 10 nF
ies
VCE = 10V, VGE = 0V — — 2.0 nF
oes
— — 0.17 nF
res
— — 300 ns
d(on)
RG = 6.2Ω, Inductive Load — — 600 ns
d(off)
*1
IE = 100A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts
EC
*1
IE = 100A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
EC
*1
VCC = 600V, IE = 100A, VGE = ±15V, — — 300 ns
rr
*1
RG = 6.2Ω, Inductive Load — 5.3 — µC
rr
RG = 6.2Ω, Tj = 150°C, — 10.7 — mJ
off
CC' + EE'
Main Terminals-Chip, — — 2.2 mΩ
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
*2
306/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
100 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Brake Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 50A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts
IC = 50A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 50A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 50A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V — 117 — nC
Turn-on Delay Time t
Rise Time tr VCC = 600V, IC = 50A, VGE = ±15V, — — 200 ns
Turn-off Delay Time t
Fall Time tf — — 300 ns
Repetitive Peak Reverse Current I
Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts
(Terminal) IF = 50A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts
IF = 50A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts
Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
(Chip) IF = 50A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IF = 50A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time trr VCC = 600V, IF = 50A, VGE = ±15V, — — 300 ns
Reverse Recovery Charge Qrr RG = 13Ω, Inductive Load — 2.7 — µC
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 50A, VGE = ±15V — 5.5 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse Err Inductive Load — 4.5 — mJ
Internal Gate Resistance rg — 0 — Ω
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 5mA, VCE = 10V 5.4 6 6.6 Volts
GE(th)
IC = 50A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts
CE(sat)
IC = 50A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
CE(sat)
— — 5.0 nF
ies
VCE = 10V, VGE = 0V — — 1.0 nF
oes
— — 0.08 nF
res
— — 300 ns
d(on)
RG = 13Ω, Inductive Load — — 600 ns
d(off)
VR = V
RRM
RG = 13Ω, Tj = 150°C, — 5.3 — mJ
off
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
, VGE = 0V — — 1 mA
RRM
4 06/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
100 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*2 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C*2, R
B Constant B
Approximate by Equation*6 — 3375 — K
(25/50)
= 493Ω -7.3 — +7.8 %
100
Power Dissipation P25 TC = 25°C*2 — — 10 mW
Thermal Resistance Characteristics, Tj = 25°C unless otherwise specied
Thermal Resistance, Junction to Case*2 R
Thermal Resistance, Junction to Case*2 R
Thermal Resistance, Junction to Case*2 R
Thermal Resistance, Junction to Case*2 R
Contact Thermal Resistance, R
Case to Heatsink*2 per 1 Module
Q Per Inverter IGBT — — 0.20 K/W
th(j-c)
D Per Inverter FWDi — — 0.29 K/W
th(j-c)
Q Per Brake IGBT — — 0.35 K/W
th(j-c)
D Brake Part ClampDi — — 0.63 K/W
th(j-c)
Thermal Grease Applied, — 0.015 — K/W
th(c-s)
*7
Mechanical Characteristics
Mounting Torque Mt Main Terminals, M5 Screw 22 27 31 in-lb
Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 10.25 — — mm
Terminal to Baseplate 12.32 — — mm
Clearance da Terminal to Terminal 10.28 — — mm
Terminal to Baseplate 10.85 — — mm
Weight m — 370 — Grams
Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm
Recommended Operating Conditons, Ta = 25°C
(DC) Supply Voltage VCC Applied Across P-N/P1-N1 Terminals — 600 850 Volts
Gate (-Emitter Drive) Voltage V
G*N-Es*N (* = U, V, W) Terminals
External Gate Resistance RG Per Switch, Inverter IGBT 8.2 — 82 Ω
Per Switch, Brake IGBT 13 — 130 Ω
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure on page 1 for chip location. The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 B
(25/50)
R
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure.
= In(
R
25
)/( 1 –
50 T25 T50
1
)
Applied Across GB-EsB / G*P-Es*P/ 13.5 15.0 16.5 Volts
GE(on)
– : CONCAVE
Y
MOUNTING
SIDE
X
+ : CONVEX
MOUNTING SIDE
MOUNTING SIDE
– : CONCAVE
+ : CONVEX
506/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
100 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
200
175
150
, (AMPERES)
C
125
15
VGE = 20V
13
100
75
50
25
COLLECTOR CURRENT, I
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
3
10
10
, (AMPERES)
E
10
EMITTER CURRENT, I
10
10
10
10
SWITCHING TIME, (ns)
10
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
2
1
0
0 0.5 1.0 2.01.5 3.02.5
EMITTER-COLLECTOR VOLTAGE, V
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
3
2
1
VCC = 600V
V
= ±15V
GE
R
= 6.2Ω
G
T
= 150°C
j
Inductive Load
0
0
10
COLLECTOR CURRENT, I
t
d(on)
t
t
f
t
r
1
10
12
11
10
9
EC
d(off)
, (AMPERES)
C
Tj = 25°C
, (VOLTS)
2
10
SATURATION VOLTAGE CHARACTERISTICS
3.5
3.0
2.5
, (VOLTS)
CE
COLLECTOR-EMITTER
(INVERTER PART - TYPICAL)
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
2.0
1.5
1.0
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE, V
0
0
COLLECTOR CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(INVERTER PART - TYPICAL)
2
10
VGE = 0V
, (nF)
1
10
res
, C
oes
, C
ies
0
10
-1
10
CAPACITANCE, C
-2
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
3
10
2
10
SWITCHING TIME, (ns)
1
10
0
10
EXTERNAL GATE RESISTANCE, R
0
10
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
t
d(on)
t
r
1
10
CE
C
ies
C
oes
C
res
1
10
t
d(off)
t
f
VCC = 600V
V
= ±15V
GE
I
= 100A
C
T
= 125°C
j
Inductive Load
SATURATION VOLTAGE CHARACTERISTICS
10
8
, (VOLTS)
CE
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
200150 17575 100 12525 50
2
10
2
10
, (Ω)
G
0
3
10
2
10
1
10
SWITCHING TIME, (ns)
0
10
10
3
10
2
10
SWITCHING TIME, (ns)
1
10
10
COLLECTOR-EMITTER
(INVERTER PART - TYPICAL)
Tj = 25°C
IC = 200A
IC = 100A
IC = 40A
6 8 10 1412 16 18 20
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
t
d(off)
t
f
t
d(on)
VCC = 600V
V
= ±15V
GE
R
= 6.2Ω
G
T
= 125°C
j
Inductive Load
0
COLLECTOR CURRENT, I
(INVERTER PART - TYPICAL)
0
EXTERNAL GATE RESISTANCE, R
t
r
1
10
, (AMPERES)
C
SWITCHING TIME VS.
GATE RESISTANCE
t
d(off)
t
t
d(on)
t
r
10
1
VCC = 600V
V
GE
I
C
T
j
Inductive Load
f
= ±15V
= 100A
= 150°C
, (Ω)
G
10
10
2
2
6 06/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
100 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
3
10
VCC = 600V
V
= ±15V
GE
R
= 6.2Ω
G
(ns)
rr
T
= 125°C
j
Inductive Load
(A), t
rr
10
REVERSE RECOVERY, I
10
10
, (mJ)
rr
, (mJ)
off
, E
10
on
10
SWITCHING ENERGY, E
REVERSE RECOVERY ENERGY, E
10
10
, (mJ)
rr
, (mJ)
off
, E
on
10
SWITCHING ENERGY, E
REVERSE RECOVERY ENERGY, E
10
I
rr
t
rr
2
1
0
10
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
2
VCC = 600V
V
= ±15V
GE
R
= 6.2Ω
G
T
= 125°C
j
Inductive Load
1
E
on
E
off
E
rr
0
-1
0
10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
2
VCC = 600V
V
= ±15V
GE
I
= 100A
C
T
= 150°C
j
Inductive Load
E
on
E
1
0
10
off
E
rr
0
GATE RESISTANCE, RG, (Ω)
10
10
10
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
3
10
VCC = 600V
V
= ±15V
GE
R
= 6.2Ω
2
10
G
T
= 150°C
j
Inductive Load
I
rr
t
rr
(ns)
rr
(A), t
rr
20
16
, (VOLTS)
GE
12
GATE CHARGE VS. V
(INVERTER PART)
IC = 100A
V
= 600V
CC
GE
8
REVERSE RECOVERY, I
1
1
1
1
2
10
2
10
2
10
10
0
10
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(INVERTER PART - TYPICAL)
2
10
VCC = 600V
V
= ±15V
GE
R
, (mJ)
, (mJ)
off
, E
on
SWITCHING ENERGY, E
REVERSE RECOVERY ENERGY, E
th(j-c')
• (NORMALIZED VALUE)
= R
Z
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
= 6.2Ω
G
rr
T
= 150°C
j
Inductive Load
1
10
10
10
10
10
10
th
th
10
E
on
E
off
E
rr
0
-1
0
10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - MAXIMUM)
10-310
0
-1
-2
-3
-2
Single Pulse
T
= 25°C
C
Per Unit Base =
R
=
th(j-c)
0.20°C/W
(IGBT)
R
=
th(j-c)
0.29°C/W
(FWDi)
1
10
1
10
-1
10
-5
10
TIME, (s)
0
10
-4
10
2
10
2
10
1
10
10
10
10
-3
10
4
GATE-EMITTER VOLTAGE, V
0
0
HALF-BRIDGE SWITCHING
(INVERTER PART - TYPICAL)
2
10
VCC = 600V
V
= ±15V
GE
I
, (mJ)
rr
, (mJ)
off
, E
on
SWITCHING ENERGY, E
REVERSE RECOVERY ENERGY, E
-1
= 100A
C
T
= 125°C
j
Inductive Load
E
on
E
off
E
rr
0
10
SATURATION VOLTAGE CHARACTERISTICS
(BRAKE PART - TYPICAL)
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
, (VOLTS)
CE(sat)
10
10
3.5
3.0
2.5
2.0
1
0
1.5
-2
1.0
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE, V
-3
0
0
COLLECTOR CURRENT, IC, (AMPERES)
GATE CHARGE, QG, (nC)
CHARACTERISTICS
1
10
GATE RESISTANCE, RG, (Ω)
COLLECTOR-EMITTER
400300200100
2
10
1007525 50
706/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
100 Amperes/1200 Volts
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(BRAKE PART - TYPICAL)
2
10
, (VOLTS)
F
1
10
FORWARD VOLTAGE, V
0
10
10
10
SWITCHING TIME, (ns)
10
10
, (mJ)
rr
, (mJ)
off
, E
on
10
SWITCHING ENERGY, E
REVERSE RECOVERY ENERGY, E
10
0.50
FORWARD CURRENT I
SWITCHING TIME VS.
GATE RESISTANCE
3
2
1
10
1
0
-1
10
(BRAKE - TYPICAL)
t
f
t
d(off)
t
d(on)
1
EXTERNAL GATE RESISTANCE, R
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
VCC = 600V
V
= ±15V
GE
R
= 13Ω
G
T
= 150°C
j
Inductive Load
E
on
E
off
E
rr
0
COLLECTOR CURRENT, IC, (AMPERES)
FORWARD CURRENT, IF, (AMPERES)
1.5
10
10
2
1
2.01.0 3.02.5
, (AMPERES)
F
t
r
VCC = 600V
V
GE
I
= 50A
C
T
= 125°C
j
Inductive Load
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
= ±15V
, (Ω)
G
3
10
, (mJ)
, E
SWITCHING ENERGY, E
2
10
HALF-BRIDGE
SWITCHING CHARACTERISTICS
3
10
2
10
1
10
SWITCHING TIME, (ns)
0
10
10
10
SWITCHING TIME, (ns)
10
10
, (mJ)
rr
off
on
10
REVERSE RECOVERY ENERGY, E
10
(BRAKE PART - TYPICAL)
VCC = 600V
V
= ±15V
GE
R
= 13Ω
G
T
= 125°C
j
Inductive Load
0
10
COLLECTOR CURRENT, I
SWITCHING TIME VS.
GATE RESISTANCE
3
2
1
10
2
1
0
10
(BRAKE - TYPICAL)
t
f
t
d(off)
t
d(on)
1
EXTERNAL GATE RESISTANCE, R
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
1
EXTERNAL GATE RESISTANCE, RG, (Ω)
1
10
2
10
2
10
t
d(on)
, (AMPERES)
C
t
r
VCC = 600V
V
= ±15V
GE
I
= 50A
C
T
= 150°C
j
Inductive Load
VCC = 600V
V
= ±15V
GE
I
= 50A
C
T
= 125°C
j
Inductive Load
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(BRAKE PART - TYPICAL)
3
10
t
d(off)
t
f
t
r
2
10
, (mJ)
off
, E
on
SWITCHING ENERGY, E
3
10
, (Ω)
G
, (mJ)
off
, E
on
E
on
E
off
E
rr
SWITCHING ENERGY, E
3
10
VCC = 600V
V
= ±15V
GE
R
= 13Ω
G
T
= 150°C
j
Inductive Load
2
10
1
10
SWITCHING TIME, (ns)
0
10
0
10
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
1
10
VCC = 600V
V
= ±15V
, (mJ)
rr
REVERSE RECOVERY ENERGY, E
, (mJ)
rr
REVERSE RECOVERY ENERGY, E
GE
R
= 13Ω
G
T
= 125°C
j
Inductive Load
E
on
E
0
10
-1
10
10
2
10
1
10
0
10
10
off
E
rr
0
COLLECTOR CURRENT, IC, (AMPERES)
FORWARD CURRENT, IF, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS
(BRAKE PART - TYPICAL)
1
EXTERNAL GATE RESISTANCE, RG, (Ω)
1
10
1
10
2
10
t
d(off)
t
f
t
d(on)
t
r
VCC = 600V
V
= ±15V
GE
I
= 50A
C
T
= 125°C
j
Inductive Load
E
on
E
off
E
rr
2
10
2
10
3
10
8 06/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
100 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
3
10
(ns)
rr
(A), t
rr
2
10
REVERSE RECOVERY, I
1
10
(BRAKE PART - TYPICAL)
VCC = 600V
V
= ±15V
GE
R
= 13Ω
G
T
= 125°C
j
Inductive Load
0
10
FORWARD CURRENT, IF, (AMPERES)
1
10
I
rr
t
rr
2
10
REVERSE RECOVERY CHARACTERISTICS
3
10
(ns)
rr
(A), t
rr
2
10
REVERSE RECOVERY, I
1
10
(BRAKE PART - TYPICAL)
VCC = 600V
V
= ±15V
GE
R
= 13Ω
G
T
= 150°C
j
Inductive Load
0
10
FORWARD CURRENT, IF, (AMPERES)
10
1
10-310
0
th(j-c')
10
-1
10
• (NORMALIZED VALUE)
-2
10
th
= R
th
I
rr
t
rr
Z
-3
2
10
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART - MAXIMUM)
-2
Single Pulse
T
= 25°C
C
Per Unit Base =
R
=
th(j-c)
0.35°C/W
(IGBT)
R
=
th(j-c)
0.63°C/W
(Clamp Diode)
-1
10
-5
10
TIME, (s)
10
10
0
-4
1
10
-1
10
-2
10
-3
10
-3
10
906/11 Rev. 2
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