C&H Technology CM100RX-12A User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM100RX-12A

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

AN

AP

AK

AJ

12

11

10

N M L K B

9

8

7

6

5

AB
(6 PLACES)

DETAIL "B"

TH1

2

TH

(11)

(10)

NTC

*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5

AX

AL

AT

AR

AS

AU

AL

AV

AL

AW

AY

DETAIL "B"

AZ

R

AD

C

AC

BB

DETAIL "A"

AH

AL

AK

AJ

AE

T

S

R

U

V

AF
AG

BC
BD

BE

H

J

QR

P

Q

P

H

X Y Z Z

P(35)

UP(34)

G

E

G

UP(33)

UN(30)

B(4)

GB(6)

EB(5)

N(36)

34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13

AA(4 PLACES)

35

36

1 2 3 4

J

P W

VP(26)

G

E

VP(25)

U(1) V(2) W(3)

G

VN(22)

ALAL

ALALAL

AMAMAM

AMAM
A
D
E

F
G

DETAIL "A"

RQ

WP(18)

G

E

WP(17)

G

WN(14)

EWN(13)EVN(21)EUN(29)

Z

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.39 136.9
B 3.03 77.1

C 0.67+0.04/-0.02 17.0+1.0/-0.5

D 4.79 121.7
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.83 21.14
J 0.37 6.5
K 2.44 62.0
L 2.26 57.5
M 1.97±0.02 50.0±0.5
N 1.53 39.0
P 0.24 6.0
Q 0.48 12.0
R 0.67 17.0
S 1.53 39.0
T 0.87 22.0
U 0.55 14.0
V 0.54 13.64
W 0.33 8.5
X 0.53 13.5
Y 0.81 20.71
Z 0.9 22.86
AA 0.22 Dia. 5.5 Dia.
AB M5 M5
AC 0.06 1.5

Dimensions Inches Millimeters

AD 0.51 13.0
AE 0.12 3.0
AF 0.21 5.4
AG 0.49 12.5
AH 0.81 20.5
AJ 0.30 7.75
AK 0.28 7.25
AL 0.15 3.81
AM 0.45 11.44
AN 0.14 3.5
AP 0.16 4.06
AQ 0.78 20.05
AR 0.03 0.8
AS 0.27 7.0
AT 0.16 4.2
AU 0.61 15.48
AV 0.60 15.24
AW 0.46 11.66
AX 0.04 1.15
AY 0.02 0.65
AZ 0.29 7.4
BA 0.05 6.2
BB 0.49 12.5
BC 0.17 Dia. 4.3 Dia.
BD 0.10 Dia. 2.5 Dia.
BE 0.08 Dia. 2.1Dia.

Six IGBTMOD™ + Brake
NX-Series Module

100 Amperes/600 Volts

AQ

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
and a seventh IGBT with free-

BA

wheel diode for dynamic braking.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM100RX-12A is a 600V (V

CES

),
100 Ampere Six-IGBTMOD™ +
Brake Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 100 12

V

CES

1Rev. 3/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module

100 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM100RX-12A Units

Power Device Junction Temperature Tj -40 to 150 °C

Storage Temperature T

-40 to 125 °C

stg

Mounting Torque, M5 Mounting Screws — 31 in-lb

Mounting Torque, M5 Main Terminal Screws — 31 in-lb

Module Weight (Typical) — 330 Grams

Baseplate Flatness, On Centerline X, Y (See Below) — ±0 ~ +100 µm

Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V

2500 Volts

ISO

Inverter Sector

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (TC = 75°C)*1 IC 100 Amperes

Peak Collector Current (Pulse)*3 ICM 200 Amperes

Emitter Current (TC = 25°C)*1 I

Peak Emitter Current*3 I

Maximum Collector Dissipation (TC = 25°C)

*1*4

PC 400 Watts

600 Volts

CES

±20 Volts

GES

*2

100 Amperes

E

*2

200 Amperes

EM

Brake Sector

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (TC = 97°C)*1 IC 50 Amperes

Peak Collector Current (Pulse)*3 ICM 100 Amperes

Maximum Collector Dissipation (TC = 25°C)

*1*4

PC 280 Watts

Repetitive Peak Reverse Voltage (Clamp Diode Part) V

Forward Current (TC = 25°C)*1 I

Forward Current (Pulse)*3 I

*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
IF, IFM, I
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*4 Junction temperature (Tj) should not increase beyond T

BASEPLATE FLATNESS
MEASUREMENT POINT

, VFM and V

RRM

+ : CONVEX

– : CONCAVE

HEATSINK SIDE

represent ratings and characteristics of the clamp diode.

RRM

rating.

j(max)

CHIP LOCATION (TOP VIEW)

Y

X

– : CONCAVE

+ : CONVEX

HEATSINK SIDE

Chip Location (Top View)

IGBT FWDi NTC Thermistor

00

22.2

34

33 32 31 30 29 28 27 26 25 24 23 22

35

UP VP WP

UP VP WP

36

24.8

29.4

32.2

36.8

0

UN

600 Volts

CES

±20 Volts

GES

*2

600 Volts

RRM

*2

50 Amperes

F

*2

100 Amperes

FM

rating.

j(max)

31.7

41.2

50.7

VN

V

NUN

1 2 3 4

78.8

88.4

21 20 19 18 17 16 15 14 13

Br

Th

WN

WN

99.5

Br

0

12

21.3

11

10

9

30.4

8

7

6

41.2

5

31.7

41.2

22.2

50.7

79.4

88.4

96.8

Dimensions in mm (Tolerance: ±1mm)

2 Rev. 3/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module

100 Amperes/600 Volts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Inverter Sector

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

IC = 100A, VGE = 15V, Tj = 125°C*5 — 1.9 — Volts

IC = 100A, VGE = 15V, Chip — 1.6 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 300V, IC = 100A, VGE = 15V — 270 — nC

Inductive Turn-on Delay Time t

Load Turn-on Rise Time tr VCC = 300V, IC = 100A, — — 100 ns

Switch Turn-off Delay Time t

Time Turn-off Fall Time tf RG = 6.2Ω, IE = 100A, — — 600 ns

Reverse Recovery Time t

Reverse Recovery Charge Qrr*2 — 4.8 — µC

Emitter-Collector Voltage V

IE = 100A, VGE = 0V, Tj = 125°C*5 — 1.95 — Volts

IE = 100A, VGE = 0V, Chip — 1.9 — Volts

VCE = V

CES

IC = 10mA, VCE = 10V 5 6 7 Volts

GE(th)

VGE = V

GES

IC = 100A, VGE = 15V, Tj = 25°C*5 — 1.7 2.1 Volts

CE(sat)

— — 13.3 nF

ies

VCE = 10V, VGE = 0V — — 1.4 nF

oes

— — 0.45 nF

res

— — 100 ns

d(on)

VGE = ±15V, — — 300 ns

d(off)

*2

Inductive Load Switching Operation — — 200 ns

rr

*2

IE = 100A, VGE = 0V, Tj = 25°C*5 — 2.0 2.8 Volts

EC

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case** R

Thermal Resistance, Junction to Case** R

Contact Thermal Resistance** R

Thermal Grease Applied

Internal Gate Resistance R

External Gate Resistance RG 6 — 62 Ω

**Thermal resistance values are per 1 element.
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
IF, IFM, I
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

, VFM and V

RRM

represent ratings and characteristics of the clamp diode.

RRM

Q Per IGBT*1 — — 0.31 °C/W

th(j-c)

D Per FWDi*1 — — 0.59 °C/W

th(j-c)

Case to Heatsink (Per 1 Module) — 0.015 — °C/W

th(j-f)

*1*7

TC = 25°C — 0 — Ω

Gint

3Rev. 3/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module

100 Amperes/600 Volts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Brake Sector

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

IC = 50A, VGE = 15V, Tj = 125°C*5 — 1.9 — Volts

IC = 50A, VGE = 15V, Chip — 1.6 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 300V, IC = 50A, VGE = 15V — 200 — nC

Repetitive Reverse Current I

Forward Voltage Drop V

IF = 50A, Tj = 125°C*5 — 1.95 — Volts

IF = 50A, Chip — 1.9 — Volts

VCE = V

CES

IC = 5mA 5 6 7 Volts

GE(th)

VGE = V

GES

IC = 50A, VGE = 15V, Tj = 25°C*5 — 1.7 2.1 Volts

CE(sat)

— — 9.3 nF

ies

VCE = 10V, VGE = 0V — — 1.0 nF

oes

— — 0.3 nF

res

*2

VR = V

RRM

*2

IF = 50A, Tj = 25°C*5 — 2.0 2.8 Volts

FM

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

— — 1.0 mA

RRM

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case** R

Thermal Resistance, Junction to Case** R

Contact Thermal Resistance** R

Thermal Grease Applied

Internal Gate Resistance R

Q Per IGBT*1 — — 0.44 °C/W

th(j-c)

D Per FWDi*1 — — 0.85 °C/W

th(j-c)

Case to Heatsink (Per 1 Module) — 0.015 — °C/W

th(j-f)

*1*7

TC = 25°C — 0 — Ω

Gint

External Gate Resistance RG 13 — 125 Ω

NTC Thermistor Sector, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R TC = 25°C*1 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

B = (InR1 – InR2) / (1/T1 – 1/T2)*6 — 3375 — K

(25/50)

Power Dissipation P25 TC = 25°C*1 — — 10 mW

**Thermal resistance values are per 1 element.
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
IF, IFM, I
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

, VFM and V

RRM

represent ratings and characteristics of the clamp diode.

RRM

= 493Ω*1 –7.3 — +7.8 %

100

4 Rev. 3/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module

100 Amperes/600 Volts

OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)

200

15

VGE = 20V

13

150

, (AMPERES)

C

100

50

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

, (AMPERES)

E

10

EMITTER CURRENT, I

10

10

10

SWITCHING TIME, (ns)

10

Tj = 25°C

= 125°C

T

j

2

1

0 1 32 4

EMITTER-COLLECTOR VOLTAGE, V

SWITCHING TIME VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

3

t

f

t

2

1

0

10

d(off)

GATE RESISTANCE, R

t

r

1

10

Tj = 25°C

12

11

10

8

9

, (VOLTS)

EC

t

d(on)

VCC = 300V
V

= ±15V

GE

I

= 100A

C

T

= 125°C

j

Inductive Load

, (Ω)

G

SATURATION VOLTAGE CHARACTERISTICS

3.5

3.0

, (VOLTS)

2.5

CE(sat)

2.0

COLLECTOR-EMITTER

(INVERTER PART - TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(INVERTER PART - TYPICAL)

2

10

VGE = 0V

, (nF)

1

10

res

, C

oes

, C

ies

0

10

-1

10

CAPACITANCE, C

-2

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

VCC = 300V
V

GE

R

2

10

G

T

= 25°C

j

Inductive Load

(ns)

rr

(A), t

rr

0

10

10

(INVERTER PART - TYPICAL)

= ±15V

= 6.2Ω

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

20010050 150

0

CE

4

10

C

ies

C

oes

C

res

1

2

10

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

10

20

16

, (VOLTS)

GE

12

COLLECTOR-EMITTER

(INVERTER PART - TYPICAL)

Tj = 25°C

IC = 200A

IC = 100A

IC = 40A

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(INVERTER PART - TYPICAL)

t

f

t

d(off)

t

d(on)

t

r

1

COLLECTOR CURRENT, IC, (AMPERES)

GATE CHARGE VS. V

(INVERTER PART)

2

10

VCC = 300V
V

= ±15V

GE

R

= 6.2Ω

G

T

= 125°C

j

Inductive Load

GE

10

IC = 100A

VCC = 200V

VCC = 300V

3

8

REVERSE RECOVERY, I

1

2

10

10

1

10

EMITTER CURRENT, IE, (AMPERES)

2

10

I

rr

t

rr

3

10

4

GATE-EMITTER VOLTAGE, V

0

100 200 300 400

0

GATE CHARGE, QG, (nC)

5Rev. 3/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module

100 Amperes/600 Volts

SWITCHING LOSS VS.

COLLECTOR CURRENT

(INVERTER PART - TYPICAL)

1

10

, (mJ/PULSE)

off

, E

on

0

10

VCC = 300V
V
R
T
Inductive Load

SWITCHING LOSS, E

-1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

REVERSE RECOVERY SWITCHING LOSS VS.

2

10

1

10

, (mJ/PULSE)

rr

0

10

REVERSE RECOVERY

SWITCHING LOSS, E

-1

10

10

2

10

GATE RESISTANCE

(INVERTER PART - TYPICAL)

VCC = 300V
V

= ±15V

GE

I

= 100A

E

T

= 125°C

j

Inductive Load

0

GATE RESISTANCE, R

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(BRAKE PART - TYPICAL)

Tj = 25°C

= 125°C

T

j

2

10

1

10

= ±15V

GE

= 6.2Ω

G

= 125°C

j

E
E

E

rr

, (Ω)

G

SWITCHING LOSS VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

2

10

VCC = 300V
V

= ±15V

GE

I

= 100A

C

T

= 125°C

j

Inductive Load

1

10

, (mJ/PULSE)

off

, E

on

10

on

off

3

10

SWITCHING LOSS, E

10

th(j-c')

10

10

• (NORMALIZED VALUE)

10

th

= R

th

Z

10

2

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

10

E

on

E

off

0

-1
0

10

IMPEDANCE CHARACTERISTICS

(INVERTER PART - TYPICAL)

10-310

0

-1

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

th(j-c)

0.31°C/W

-2

(IGBT)
R

=

th(j-c)

0.59°C/W
(FWDi)

-3

10

GATE RESISTANCE, RG, (Ω)

TRANSIENT THERMAL

-2

10

10

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(BRAKE PART - TYPICAL)

10-310

0

-2

10

1

-1

10

-5

10

-1

10

2

10

0

-4

0

1

10

-1

10

-2

10

-3

10

-3

10

1

10

REVERSE RECOVERY SWITCHING LOSS VS.

1

10

, (mJ/PULSE)

rr

0

10

REVERSE RECOVERY

SWITCHING LOSS, E

-1

10

10

SATURATION VOLTAGE CHARACTERISTICS

3.5

3.0

, (VOLTS)

2.5

CE(sat)

2.0

EMITTER CURRENT

(INVERTER PART - TYPICAL)

VCC = 300V
V

= ±15V

GE

R

= 6.2Ω

G

T

= 125°C

j

Inductive Load

E

rr

1

EMITTER CURRENT, IE, (AMPERES)

2

10

COLLECTOR-EMITTER

(BRAKE PART - TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR-CURRENT, IC, (AMPERES)

3

10

1004020 8060

, (AMPERES)

F

1

10

FORWARD CURRENT, I

0

10

0 1 32 4

FORWARD VOLTAGE, V

, (VOLTS)

F

-1

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

th(j-c)

• (NORMALIZED VALUE)

0.44°C/W

-2

10

th

(IGBT)

= R

th

R

=

th(j-c)

Z

0.85°C/W
(FWDi)

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-4

10

-1

10

-2

10

-3

10

-3

10

6 Rev. 3/09