6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
CM100MXA-24S
AJ
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
A
D
E
F
KK
P1(48-49)
B(52-53)
GB(41)
N1(44-45)
G
K
DETAIL "A"
K
KM
DETAIL "B"
KKKK
ClampDi
GUP(13)
U(14-15)
GUN(40)
*Use both two terminals (R/S/T/P/N/P1/B/N1/U/V/W)
for the external connection.
K
K
30
29
K
Q S
28
27
L
K
Y
K
KK
AE
E*(39)
R B
26
25
24
K
23
AF
N (4 PLACES)
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to ±0.4
FWDi
GVP(18)
V(19-20) W(24-25)
GVN(33)
GWP(23)
GWN(31)
J
H
X
54
55
56
57
P
58
59
60
61
AD
R
(1-2)
LLL
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
53
W
K
K
L
K
K
12345678910111213141516171819202122
T
LLLL
P(54-56)
T
S
(9-10)
(5-6)
ConvDi
N(59-61)
AG
AH
K
AA
AB
AC
DETAIL "A"
C
Z
AN
AM
AL
DETAIL "B"
TH
TH1
(29)
(28)
NTC
E(32)
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.49 114.05
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.16 4.06
J 0.51 13.09
K 0.15 3.81
L 0.45 11.43
M 0.9 22.86
N 0.22 Dia. 5.5 Dia.
P 2.13 54.2
Q 1.53 39.0
R 1.97±0.02 50.0±0.5
S 2.26 57.5
T 0.30 7.75
Dimensions Inches Millimeters
V 0.088 Dia. 2.25 Dia.
W 0.46 11.66
X 0.16 4.2
Y 0.59 15.0
Z 0.27 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.12 3.0
AD 0.14 3.5
AE 0.03 0.8
AF 0.15 3.75
AG 0.05 1.15
AH 0.025 0.65
AJ 0.29 7.4
AK 0.05 1.2
AL 0.49 12.5
AM 0.12 3.0
AN 0.17 Dia. 4.3 Dia.
U 0.102 Dia. 2.6 Dia.
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
100 Amperes/1200 Volts
AK
U
V
Description:
CIBs are low profile and thermally
efficient. Each module consists of
a three-phase diode converter section, a three-phase inverter section
and a brake circuit. A thermistor is
included in the package for sensing the baseplate temperature. 6th
Generation CSTBT chips yield low
loss.
2
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM100MXA-24S is a 1200V
(V
), 100 Ampere CIB Power
CES
Module.
Type Current Rating
Amperes Volts (x 50)
CM 100 24
V
CES
105/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 119°C)
*2,*3
IC 100 Amperes
Collector Current (Pulse, Repetitive)*4 I
Total Power Dissipation (TC = 25°C)
Emitter Current (TC = 25°C)
*2,*3
P
*2,*3
I
Emitter Current (Pulse, Repetitive)*4 I
Maximum Junction Temperature T
1200 Volts
CES
±20 Volts
GES
200 Amperes
CRM
750 Watts
tot
*1
100 Amperes
E
*1
200 Amperes
ERM
175 °C
j(max)
Brake Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 125°C)
*2,*3
IC 50 Amperes
Collector Current (Pulse, Repetitive)*4 I
Total Power Dissipation (TC = 25°C)
*2,*3
P
Repetitive Peak Reverse Voltage (VGE = 0V) V
Forward Current (TC = 25°C)
*2,*3
I
Forward Current (Pulse, Repetitive)*4 I
Maximum Junction Temperature T
1200 Volts
CES
±20 Volts
GES
100 Amperes
CRM
425 Watts
tot
1200 Volts
RRM
*1
50 Amperes
F
*1
100 Amperes
FRM
175 °C
j(max)
Converter Part ConvDi
Characteristics Symbol Rating Units
Repetitive Peak Reverse Voltage V
Recommended AC Input Voltage Ea 440 V
DC Output Current (3-phase Full Wave Rectifying, TC = 125°C)
*2,*3
IO 100 Amperes
Surge Forward Current (Sine Half Wave 1 Cycle Peak Value, f = 60 Hz, Non-repetitive) I
Current Square Time (Value for One Cycle of Surge Current) I
Maximum Junction Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*4 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
j(max)
) rating.
j(max)
rating.
2 05/11 Rev. 2
0 0
15.2
18.1
31.2
32.6
47.0
48.0
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
1200 Volts
RRM
1000 Amperes
FSM
2
4165 A2s
t
150 °C
j(max)
93.0
18.2033.9
26.0
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
53
Tr
54
Di
Br
55
Br
56
57
CRRNCR
58
59
60
61
0
CR
SN
TN
CRRPCR
CR
SP
TP
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
24.5
46.8
36.4
71.8
DiUNDi
VN
TrUNTr
VN
UP
62.9
72.1
110.9
82.9
102.3
Tr
30
WN
29
Th
Di
28
WN
27
26
Di
25
WP
24
Tr
DiVPTrVPDiUPTr
23
WP
LABEL SIDE
81.3
90.5
99.8
109.1
1 7.5
20.0
26.0
26.8
35.7
43.1
46.7
RMS
24.6
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Module
Characteristics Symbol Rating Units
Maximum Case Temperature*2 T
Operating Junction Temperature T
Storage Temperature T
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V
125 °C
C(max)
-40 to +150 °C
j(op)
-40 to +125 °C
stg
2500 Volts
ISO
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 100A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts
IC = 100A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 100A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 100A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V — 233 — nC
Turn-on Delay Time t
Rise Time tr VCC = 600V, IC = 100A, VGE = ±15V, — — 200 ns
Turn-off Delay Time t
Fall Time tf — — 300 ns
Emitter-Collector Voltage V
(Terminal) IE = 100A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts
IE = 100A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts
Emitter-Collector Voltage V
(Chip) IE = 100A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 100A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Internal Lead Resistance R
Per Switch, TC = 25°C
Internal Gate Resistance rg Per Switch — 0 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure on page 1 for chip location. The heatsink ther mal resistance should be measured just under the chips.
*3 Junction temperature (Tj) should not increase beyond maximum junction temperature (T
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 10mA, VCE = 10V 5.4 6.0 6.6 Volts
GE(th)
IC = 100A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts
CE(sat)
IC = 100A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
CE(sat)
— — 10 nF
ies
VCE = 10V, VGE = 0V — — 2.0 nF
oes
— — 0.17 nF
res
— — 300 ns
d(on)
RG = 6.2Ω, Inductive Load — — 600 ns
d(off)
*1
IE = 100A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts
EC
*1
IE = 100A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
EC
*1
VCC = 600V, IE = 100A, VGE = ±15V — — 300 ns
rr
*1
RG = 6.2Ω, Inductive Load — 5.3 — µC
rr
CC' + EE'
Main Terminals-Chip, — — 3.5 mΩ
) rating.
j(max)
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
*2
rating.
j(max)
305/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
100 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Brake Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 50A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts
IC = 50A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 50A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 50A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V — 117 — nC
Turn-on Delay Time t
Rise Time tr VCC = 600V, IC = 50A, VGE = ±15V, — — 200 ns
Turn-off Delay Time t
Fall Time tf — — 300 ns
Internal Gate Resistance rg Per Switch — 0 — Ω
Repetitive Peak Reverse Current I
Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts
(Terminal) IF = 50A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts
IF = 50A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts
Forward Voltage VF IF = 50A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
(Chip) IF = 50A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IF = 50A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time trr VCC = 600V, IF = 50A, VGE = ±15V — — 300 ns
Reverse Recovery Charge Qrr RG = 13Ω, Inductive Load — 2.7 — µC
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 5mA, VCE = 10V 5.4 6.0 6.6 Volts
GE(th)
IC = 50A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts
CE(sat)
IC = 50A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
CE(sat)
— — 5.0 nF
ies
VCE = 10V, VGE = 0V — — 1.0 nF
oes
— — 0.08 nF
res
— — 300 ns
d(on)
RG = 13Ω, Inductive Load — — 600 ns
d(off)
VR = V
RRM
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
, VGE = 0V — — 1 mA
RRM
4 05/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
100 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Converter Part ConDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Repetitive Peak Reverse Current I
VR = V
RRM
, Tj = 150°C — — 20 mA
RRM
Forward Voltage VF (Terminal) IF = 75A*5 — 1.28 1.8 Volts
NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*2 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C*2, R
B Constant B
Approximate by Equation*6 — 3375 — K
(25/50)
Power Dissipation P25 TC = 25°C*2 — — 10 mW
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure on page 1 for chip location. The heatsink ther mal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 B
(25/50)
R
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
= In(
R
25
)/( 1 –
50 T25 T50
1
)
= 493Ω -7.3 — +7.8 %
100
505/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
100 Amperes/1200 Volts
Thermal Resistance Characteristics, Tj = 25°C unless otherwise specied
Thermal Resistance, Junction to Case*2 R
Thermal Resistance, Junction to Case*2 R
Thermal Resistance, Junction to Case*2 R
Thermal Resistance, Junction to Case*2 R
Thermal Resistance, Junction to Case*2 R
Contact Thermal Resistance, R
Case to Heatsink*2 per 1 Module
Q Per Inverter IGBT, per 1/6 Module — — 0.20 K/W
th(j-c)
D Per Inverter FWDi, per 1/6 Module — — 0.29 K/W
th(j-c)
Q Brake Part IGBT — — 0.35 K/W
th(j-c)
D Brake Part ClampDi — — 0.63 K/W
th(j-c)
D Converter Part ConvDi, per 1/6 Module — — 0.24 K/W
th(j-c)
Thermal Grease Applied, — 0.015 — K/W
th(c-s)
*7
Mechanical Characteristics
Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Weight m — 300 — Grams
Creepage Distance ds Terminal to Terminal 6.47 — — mm
Terminal to Baseplate 14.27 — — mm
Clearance da Terminal to Terminal 6.47 — — mm
Terminal to Baseplate 12.33 — — mm
Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm
Recommended Operating Conditons, Ta = 25°C
(DC) Supply Voltage VCC Applied Across P-N/P1-N1 Terminals — 600 850 Volts
Gate (-Emitter Drive) Voltage V
(* = U, V, W) Terminals
External Gate Resistance RG Inverter Part IGBT 6.2 — 62 Ω
Brake Part IGBT 13 — 130 Ω
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
+ : CONVEX
– : CONCAVE
MOUNTING
X
MOUNTING SIDE
MOUNTING SIDE
Applied Across GB-Es / G*P-*/ G*N-Es 13.5 15.0 16.5 Volts
GE(on)
93.0
110.9
82.9
102.3
Tr
30
WN
29
Th
Di
28
WN
27
26
Di
25
WP
24
Tr
DiVPTrVPDiUPTr
23
WP
LABEL SIDE
81.3
90.5
99.8
109.1
Y
SIDE
– : CONCAVE
18.2033.9
0 0
15.2
18.1
31.2
32.6
47.0
48.0
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
26.0
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
53
Tr
54
Di
Br
55
Br
56
57
CRRNCR
58
59
60
61
0
CR
SN
TN
CRRPCR
CR
SP
TP
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
24.5
36.4
46.8
71.8
DiUNDi
VN
TrUNTr
VN
UP
62.9
72.1
+ : CONVEX
1 7.5
20.0
26.0
26.8
35.7
43.1
46.7
24.6
6 05/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
100 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(INVERTER PART - CHIP - TYPICAL)
200
150
, (AMPERES)
C
100
Tj =
25°
C
15
VGE = 20V
13.5
50
COLLECTOR CURRENT, I
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - CHIP - TYPICAL)
3
10
10
, (AMPERES)
E
10
EMITTER CURRENT, I
10
10
10
Tj = 25°C
= 125°C
T
j
= 150°C
T
2
1
0
3
2
j
0 1.0 0.5 2.51.5 2.0 3.0
EMITTER-COLLECTOR VOLTAGE, V
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
t
f
t
d(off)
12
11
10
9
, (VOLTS)
EC
SATURATION VOLTAGE CHARACTERISTICS
3.5
3.0
, (VOLTS)
2.5
CE(sat)
2.0
COLLECTOR-EMITTER
(INVERTER PART - CHIP - TYPICAL)
VGE = 15V
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
1.5
COLLECTOR-EMITTER
1.0
0.5
SATURATION VOLTAGE, V
0
0
COLLECTOR CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(INVERTER PART - TYPICAL)
2
10
VGE = 0V
, (nF)
1
10
res
, C
oes
, C
ies
0
10
-1
10
CAPACITANCE, C
-2
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
3
10
(ns)
rr
(A), t
rr
2
10
0
10
(INVERTER PART - TYPICAL)
CE
C
ies
C
oes
C
res
1
10
VCC = 600V
V
= ±15V
GE
R
= 27Ω
G
T
= 150°C
j
Inductive Load
I
rr
t
rr
20010050 150
2
10
SATURATION VOLTAGE CHARACTERISTICS
COLLECTOR-EMITTER
(INVERTER PART - CHIP - TYPICAL)
10
8
, (VOLTS)
CE(sat)
6
4
COLLECTOR-EMITTER
IC = 200A
IC = 100A
IC = 40A
2
SATURATION VOLTAGE, V
0
6 8 10 1412 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
3
10
t
d(off)
t
f
t
2
10
SWITCHING TIME, (ns)
1
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
20
IC = 100A
V
= 600V
CC
15
, (VOLTS)
GE
GATE CHARGE VS. V
d(on)
t
r
2
10
(INVERTER PART)
10
Tj = 25°C
VCC = 600V
V
= ±15V
GE
R
= 27Ω
G
T
= 150°C
j
Inductive Load
GE
3
10
SWITCHING TIME, (ns)
1
10
0
10
t
d(on)
t
r
1
10
GATE RESISTANCE, R
VCC = 600V
V
= ±15V
GE
I
= 100A
C
T
= 150°C
j
Inductive Load
, (Ω)
G
2
10
REVERSE RECOVERY, I
1
10
1
10
EMITTER CURRENT, IE, (AMPERES)
5
GATE-EMITTER VOLTAGE, V
2
10
3
10
0
100 200 300 400
0
GATE CHARGE, QG, (nC)
705/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
100 Amperes/1200 Volts
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
2
10
, (mJ/PULSE)
off
, E
on
1
10
SWITCHING LOSS, E
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
2
10
, (mJ/PULSE)
rr
1
10
REVERSE RECOVERY
SWITCHING LOSS, E
0
10
10
SATURATION VOLTAGE CHARACTERISTICS
3.5
3.0
, (VOLTS)
2.5
CE(sat)
2.0
GATE RESISTANCE
(INVERTER PART - TYPICAL)
VCC = 600V
V
= ±15V
GE
I
= 100A
C
T
= 150°C
j
L
= 50nH
s
Inductive Load
0
GATE RESISTANCE, R
COLLECTOR-EMITTER
(BRAKE PART - TYPICAL)
VGE = 15V
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
2
10
E
rr
1
10
1.5
COLLECTOR-EMITTER
1.0
0.5
SATURATION VOLTAGE, V
0
0
COLLECTOR CURRENT, IC, (AMPERES)
VCC = 600V
V
= ±15V
GE
R
= 27Ω
G
T
= 150°C
j
L
= 50nH
s
Inductive Load
E
on
E
off
, (Ω)
G
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
2
10
VCC = 600V
V
= ±15V
GE
I
= 100A
C
T
= 150°C
j
L
= 50nH
, (mJ/PULSE)
off
, E
on
SWITCHING LOSS, E
3
10
th(j-c')
2
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
s
Inductive Load
1
10
0
10
0
10
(INVERTER & CONVERTER PART - MAXIMUM)
10-310
0
10
-1
10
• (NORMALIZED VALUE)
-2
10
th
= R
th
Z
-3
10
2
10
GATE RESISTANCE, RG, (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
-2
Single Pulse
T
= 25°C
C
Per Unit Base =
R
=
th(j-c)
0.20°C/W
(IGBT)
R
=
th(j-c)
0.29°C/W
(FWDi)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(BRAKE PART - TYPICAL)
1
10
-1
10
R
th(j-c)
0.24°C/W
(CONVERTER)
-5
10
TIME, (s)
0
10
=
-4
10
E
on
E
off
2
10
1
10
-1
10
-2
10
-3
10
-3
10
REVERSE RECOVERY SWITCHING LOSS VS.
2
10
, (mJ/PULSE)
rr
1
10
REVERSE RECOVERY
SWITCHING LOSS, E
0
10
10
3
10
2
10
, (AMPERES)
F
1
10
FORWARD CURRENT, I
0
10
0 2.01.00.5 1.5
10-310
0
th(j-c')
10
EMITTER CURRENT
(INVERTER PART - TYPICAL)
VCC = 600V
V
= ±15V
GE
R
= 27Ω
G
T
= 150°C
j
L
= 50nH
s
Inductive Load
E
rr
1
EMITTER CURRENT, IE, (AMPERES)
RECTIFIER DIODE FORWARD
CHARACTERISTICS
(CONVERTER - TYPICAL)
2
10
Tj = 25°C
= 125°C
T
j
FORWARD VOLTAGE, VF, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART - MAXIMUM)
-2
-1
10
3
10
0
10
1
10
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
, (AMPERES)
E
1
10
EMITTER CURRENT, I
0
10
1005025 75
0 1.0 0.5 2.51.5 2.0 3.0
EMITTER-COLLECTOR VOLTAGE, V
, (VOLTS)
EC
-1
10
Single Pulse
T
= 25°C
C
Per Unit Base =
R
=
th(j-c)
• (NORMALIZED VALUE)
0.35°C/W
-2
10
th
(IGBT)
= R
th
R
=
th(j-c)
Z
0.63°C/W
(FWDi)
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-4
10
-1
10
-2
10
-3
10
-3
10
8 05/11 Rev. 2
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