C&H Technology CM100MX-12A User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM100MX-12A

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

TH2
(29)

AL

E

AM

S(31)

AJ

DETAIL "A"

AN

Y

DETAIL "B"

TH
(28)

AD

X

R

(1-2)

A

E

F

J

L

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

53

W

54

K

55

56

V

57

K

58

59

V

60

K

61

12345678910111213141516171819202122

T

LLLLL

U

H

P(52-53)

T

S

(9-10)

(5-6)

ConvDi

N(57-58)

G

M M

KKKK

D

DETAIL "A"

P1(54-55)

ClampDi FWDi

B(24-25)

GB(35)

N1(60-61)

L

K

DETAIL "B"

KKKKKK

GUP(49)

ESUP(48)

U(13-14)

GUN(34)

K

K

K

Y

30

29

K

28

27

L

26

25

K

24

23

GVP(44)

ESVP(43)

V(17-18 )W(21-22)

GVN(33)

AF

AE

QMS

R B P

N (4 PLACES)

GWP(39)

E

GWN(32)

X

SWP(38)

AC

AA

AB

AG

K

AH

C

Z

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.49 114.05
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.16 4.06
J 0.51 13.09
K 0.15 3.81
L 0.45 11.43
M 0.6 15.24
N 0.22 Dia. 5.5 Dia.
P 2.13 54.2
Q 1.53 39.0
R 1.97±0.02 50.0±0.5
S 2.26 57.5
T 0.30 7.75
U 0.59 15.0

Dimensions Inches Millimeters

V 0.3 7.62
W 0.46 11.66
X 0.16 4.2
Y 0.08 Dia. 2.1 Dia.
Z 0.27 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.12 3.0
AD 0.14 3.5
AE 0.03 0.8
AF 0.15 3.75
AG 0.05 1.15
AH 0.025 0.65
AJ 0.29 7.4
AK 0.047 1.2
AL 0.49 12.5
AM 0.06 1.5
AN 0.17 Dia. 4.3 Dia.
AP 0.10 Dia. 2.5 Dia.

NX-Series CIB Module

(3Ø Converter + 3Ø Inverter + Brake)

100 Amperes/600 Volts

AK

AP

1

Description:

CIBs are low profile and thermally
efficient. Each module consists of
a three-phase diode converter sec­tion, a three-phase inverter section
and a brake circuit. A thermistor is
included in the package for sens­ing the baseplate temperature. 5th
Generation CSTBT chips yield low
loss.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM100MX-12A is a 600V (V
100 Ampere CIB Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 100 12

V

CES

CES

),

1Rev. 11/11

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

Chip Location (Top View)

CM100MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)

100 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM100MX-12A Units

Inverter Part IGBT/FWDi

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (DC, TC = 75°C)

*2,*4

IC 100 Amperes

Collector Current (Pulse)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current*2 I

Emitter Current (Pulse)*3 I

600 Volts

CES

±20 Volts

GES

200 Amperes

CRM

400 Watts

tot

*1

10 Amperes

E

*1

200 Amperes

ERM

Brake Part IGBT/ClampDi

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (DC, TC = 97°C)

*2,*4

IC 50 Amperes

Collector Current (Pulse)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Repetitive Peak Reverse Voltage V

Forward Current (TC = 25°C)*2 IF 50 Amperes

Forward Current (Pulse)*3 I

600 Volts

CES

±20 Volts

GES

100 Amperes

CRM

280 Watts

tot

600 Volts

RRM

100 Amperes

FRM

Converter Part ConvDi

Repetitive Peak Reverse Voltage V

Recommended AC Input Voltage Ea 220 Volts

DC Output Current (3-Phase Full Wave Rectifying, f = 60Hz,TC = 125°C)

Surge Forward Current (Sine Half-wave 1 Cycle Peak Value, f = 60Hz, Non-repetitive) I

Current Square Time (Value for One Cycle of Surge Current) I2t 4160 A2s

Module

Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.) V

Junction Temperature Tj -40 ~ +150 °C

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate
and the heatsink side just under the chips. Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

800 Volts

RRM

*2,*4

IO 100 Amperes

1000 Amperes

FSM

2500 Volts

ISO

-40 ~ +125 °C

stg

j(max)

) rating.

j(max)

rating.

IGBT FWDi Converter Diode NTC Thermistor

26.8

29.8

0

25.8

43.2

00

54

55

56

57

58

59

60

61

30.8

41.2

51.6

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

53

UP

TN

SN

RN

RP SP TP

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

25.3

UP

UN

36.8

48.2

Dimensions in mm (Tolerance: ±1mm)

65.5

65.4

70.3

V

P

VP

UN

72.4

78.7

79.3

V

91.7

98.9

102.3

84.6

WP

WP

VN

WN

N

WN

91.6

86.7

10 1.0

Br
Th

Br

102.3

0

15.6

30

29

21.6

22.6

28

29.2

27

30.0

26

25

37.4

24

23

44.8

2 Rev. 11/11