C&H Technology CM100DY-28H User Manual

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Suite 108
Minnetonka, MN 55345

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Please contact the C&H Technology team for the following questions -

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM100DY-28H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

H

C2E1

C

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.89 48.0
D 1.18 Max. 30.0 Max.
E 0.90 23.0
F 0.83 21.2
G 0.71 18.0
H 0.67 17.0

J 0.63 16.0

K

P - DIA. (2 TYP.)

J

D

Q

B

E

N

E

R - M5 THD (3 TYP.)

JJ

N

E2

Dimensions Inches Millimeters

H

C1E2

G1 E1 E2 G2

L

M

K 0.51 13.0

L 0.47 12.0
M 0.30 7.5
N 0.28 7.0

P 0.256 Dia. Dia. 6.5
Q 0.26 6.5
R M5 Metric M5

S 0.16 4.0

S

G

S

.110 TAB

F

G2
E2

C1

E1
G1

Dual IGBTMOD™
H-Series Module

100 Amperes/1400 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM100DY-28H
is a 1400V (V
Dual IGBTMOD™ Power Module.

Type Current Rating V

CM 100 28

CE(sat)

(135ns) Free Wheel Diode
(20-25kHz)
Heat Sinking

), 100 Ampere

CES

Amperes Volts (x 50)

CES

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM100DY-28H
Dual IGBTMOD™ H-Series Module

100 Amperes/1400 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM100DY-28H Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current I
Peak Collector Current I

j

stg
CES
GES

C

CM

Emitter Current IE* 100 Amperes
Emitter Current-Pulse IEM* 200** Amperes
Maximum Collector Dissipation P

c

Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 270 Grams
V Isolation V

* IE, VEC, Trr, Qrr & diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
** Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T
*** Junction temperature (Tj) should not increase beyond 150°C.

j(max)

rating.

RMS

–40 to 150 °C
–40 to 125 °C

1400 Volts

±20 Volts
100 Amperes

200** Amperes

780*** Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5

GES

µ

IC = 10mA, VCE = 10V 5.0 6.5 8.0 Volts

IC = 100A, VGE = 15V – 3.1 4.2* Volts

A

IC = 100A, VGE = 15V, Tj = 125°C – 2.95 – Volts

Total Gate Charge Q

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

VCC = 800V, IC = 100A, VGE = 15V – 510 – nC

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Emitter-Collector Voltage V
Diode Reverse Recovery Charge Q

ies

oes

res

r

f

rr

EC

rr

VGE = 0V, VCE = 10V – – 7 nF

VCC = 800V, IC = 100A, – – 400 ns

V

= V

GE1

= 15V, RG = 3.1Ω – – 300 ns

GE2

IE = 100A, diE/dt = –300A/µs – – 300 ns

IE = 100A, VGE = 0V – – 3.8 V

IE = 100A, diE/dt = –300A/µs – 1.0 –

– – 20 nF

– – 4 nF
– – 250 ns

– – 500 ns

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.13 °C/W

Per IGBT – – 0.16 °C/W

Per FWDi – – 0.35 °C/W

2

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM100DY-28H
Dual IGBTMOD™ H-Series Module

100 Amperes/1400 Volts

OUTPUT CHARACTERISTICS

OUTPUT CHARACTERISTICS

(TYPICAL)

(TYPICAL)

200

Tj = 25oC

160

VGE = 20V

, (AMPERES)

, (AMPERES)

C

C

120

80

40

COLLECTOR CURRENT, I

COLLECTOR CURRENT, I

0

0246810

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

13

15

15

7

COLLECTOR-EMITTER

(TYPICAL)

12

11

10

10

9

9
8

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

2

IC = 200A

IC = 100A

IC = 40A

VCC = 800V

= ±15V

V

GE

= 3.1Ω

R

G

= 125°C

T

j

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

4

10

t

d(off)

3

10

t

f

t

d(on)

2

10

SWITCHING TIME, (ns)

t

r

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

(TYPICAL)

10

TRANSFER CHARACTERISTICS

(TYPICAL)

200

VCE = 10V

Tj = 25°C

= 125°C

160

, (AMPERES)

C

120

T

j

80

40

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

1.0 1.5 2.0 2.5 3.0 3.5 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

2

10

(TYPICAL)

(TYPICAL)

t

rr

I

rr

10

10

10

REVERSE RECOVERY TIME, t

di/dt = -200A/µsec

= 25°C

T

j

1

10

3

10

1

10

EMITTER CURRENT, IE, (AMPERES)

2

10

10

3

10

5

4

, (VOLTS)

CE(sat)

3

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

2

10

, (nF)

res

1

10

, C

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

10

2

20

16

, (AMPERES)

, (VOLTS)

rr

GE

1

12

8

0

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

-1

0

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

VGE = 15V

0 40 80 120 160 200

COLLECTOR-CURRENT, IC, (AMPERES)

VGE = 0V
f = 1MHz

-1

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

IC = 100A

0 200 400 600 800

(TYPICAL)

Tj = 25°C

= 125°C

T

j

CAPACITANCE VS. V

(TYPICAL)

0

10

GATE CHARGE, V

VCC = 600V

GATE CHARGE, QG, (nC)

CE

1

10

GE

VCC = 800V

C

ies

C

oes

C

res

10

2

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM100DY-28H
Dual IGBTMOD™ H-Series Module

100 Amperes/1400 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.16°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

1

10

-1

10

-2

10

-3

-4

10

-3

10

-3

10

1

10

th(j-c)

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.35°C/W

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

4