C&H Technology CM100DY-24A User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM100DY-24A

A

EE

FF

B

N

L

(2 PLACES)

D

M NUTS
(3 PLACES)

J

G

G

H

KKK

PPP

T THICK
U WIDTH

QQ

V

C

S

R

G2

E2

E1

G1

C1E2C2E1

LABEL

C2E1 E2 C1

G2

E2

E1

G1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBTMOD™
A-Series Module

100 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0

B 1.89 48.0

C 1.14+0.004/-0.02 29.0+0.1/-0.5

D 3.15±0.01 80.0±0.25

E 0.67 17.0

F 0.91 23.0

G 0.16 4.0

H 0.71 18.0

J 0.51 13.0

K 0.47 12.0

Rev. 10/07 1

Dimensions Inches Millimeters

L 0.26 Dia. Dia. 6.5

M M5 Metric M5

N 0.79 20.0

P 0.63 16.0

Q 0.28 7.0

R 0.83 21.2

S 0.30 7.5

T 0.02 0.5

U 0.110 2.8

V 0.16 4.0

Applications:

£ AC Motor Control
£ UPS
£ Battery Powered Supplies

Ordering Information:

Example: Select the complete
part module number you
desire from the table below -i.e.
CM100DY-24A is a 1200V (V

CES

100 Ampere Dual IGBTMOD™
Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 100 24

V

CES

),

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM100DY-24A
Dual IGBTMOD™ A-Series Module

100 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol CM100DY-24A Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (DC, TC = 84°C*) IC 100 Amperes

Peak Collector Current ICM 200** Amperes

Emitter Current*** (TC = 25°C) IE 100 Amperes

Peak Emitter Current*** IEM 200** Amperes

Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) PC 672 Watts

Mounting Torque, M5 Main Terminal — 30 in-lb

Mounting Torque, M6 Mounting — 40 in-lb

Weight — 310 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

–40 to 125 °C

stg

1200 Volts

CES

±20 Volts

GES

2500 Volts

ISO

Static Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

I

Total Gate Charge QG VCC = 600V, IC = 100A, VGE = 15V — 500 — nC

Emitter-Collector Voltage** VEC I

V

CES

V

GES

I

GE(th)

IC = 100A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts

CE(sat)

C

= V

CE

= V

GE

= 10mA, VCE = 10V 6.0 7.0 8.0 Volts

C

= 100A, VGE = 15V, Tj = 125°C — 2.4 — Volts

= 100A, VGE = 0V — — 3.8 Volts

E

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Time Fall Time tf Inductive Load — — 350 ns

Diode Reverse Recovery Time*** trr Switching Operation, — — 150 ns

Diode Reverse Recovery Charge*** Qrr I

*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

— — 17.5 nf

ies

V

oes

— — 0.34 nf

res

— — 100 ns

d(on)

V

d(off)

GE1

= 10V, VGE = 0V — — 1.5 nf

CE

= 600V, IC = 100A, — — 70 ns

CC

= V

= 15V, RG = 3.1Ω, — — 400 ns

GE2

= 100A — 5.0 — µC

E

rating.

j(max)

Rev. 10/072

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

2

10

1

10

-1

10

0

10

-2

10

1

01 3425

10

1

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

6810 1412 16 18 20

8

6

4

2

0

Tj = 25°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

4

3

0

50

150

2

1

0

200

VGE = 15V

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 200A

IC = 100A

IC = 40A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0246 810

50

0

VGE =

20V

10

11

12

15

13

9

Tj = 25

o

C

100

150

200

100

10

-1

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

0

10

1

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= 15V

R

G

= 3.1Ω

T

j

= 125°C

Inductive Load

t

f

10

3

Tj = 25°C
T

j

= 125°C

CM100DY-24A
Dual IGBTMOD™ A-Series Module

100 Amperes/1200 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case* R

Thermal Resistance, Junction to Case* R

Contact Thermal Resistance R

External Gate Resistance RG 3.1 — 42 Ω

*TC, Tf measured point is just under the chips.

Q Per IGBT 1/2 Module — — 0.186 °C/W

th(j-c)

D Per FWDi 1/2 Module — — 0.34 °C/W

th(j-c)

Per 1/2 Module, Thermal Grease Applied — 0.022 — °C/W

th(c-f)

Rev. 10/07 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25°C
Per Unit Base =
R

th(j-c)

=

0.186°C/W
(IGBT)
R

th(j-c)

=

0.34°C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

20

0

16

12

8

4

0

160 320 480 800640

VCC = 600V

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

2

10

1

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

VCC = 600V
V

GE

= 15V

R

G

= 3.1Ω

T

j

= 25°C

Inductive Load

VCC = 400V

IC = 100A

10

3

COLLECTOR CURRENT, I

C

, (AMPERES)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

VCC = 600V
V

GE

= 15V

R

G

= 3.1Ω

T

j

= 125°C
Inductive Load
C Snubber at Bus

VCC = 600V
V

GE

= 15V

I

C

= 100A

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

3

SWITCHING LOSS VS.

COLLECTOR CURRENT (TYPICAL)

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

0

10

1

10

1

10

0

10

2

SWITCHING LOSS VS.

GATE RESISTANCE (TYPICAL)

E

SW(on)

E

SW(off)

I

rr

t

rr

E

SW(on)

E

SW(off)

GATE RESISTANCE, R

G

, ()

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

-1

10

0

10

1

10

0

10

1

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

10

3

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(TYPICAL)

VCC = 600V
V

GE

= 15V

I

C

= 100A

T

j

= 125°C
Inductive Load
C Snubber at Bus

VCC = 600V
V

GE

= 15V

R

G

= 3.1Ω

T

j

= 125°C
Inductive Load
C Snubber at Bus

CM100DY-24A
Dual IGBTMOD™ A-Series Module

100 Amperes/1200 Volts

Rev. 10/074