C&H Technology CM100DU-34KA User Manual

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CM100DU-34KA
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TC Measured Point
T - (4 TYP.)
G2 E2 E1
G1
C1
P
K
U
N
R
M
L
C1
H
J
H
G2 E2
E1 G1
F
G
E
B
S - NUTS
(3 TYP)
C
CM
C2E1 E2
K
C2E1
A
D
C
L
Q
Q
K
E2
Dual IGBTMOD™ KA-Series Module
100 Amperes/ 1700 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter­connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
Low Drive PowerLow VDiscrete Super-Fast Recovery
Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0 B 2.44 62.0 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 D 3.66±0.01 93.0±0.25 E 1.88±0.01 48.0±0.25 F 0.67 17.0 G 0.16 4.0 H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
Dimensions Inches Millimeters
L 0.87 22.0 M 0.33 8.5 N 0.10 2.5 P 0.85 21.5 Q 0.98 25.0 R 0.11 2.8 SM6 M6
T 0.26 Dia. 6.5 Dia. U 0.02 0.5
Applications:
AC Motor ControlMotion/Servo ControlUPSWelding Power SuppliesLaser Power Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM100DU-34KA is a 1700V (V
), 100 Ampere
CES
Dual IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 100 34
CES
1
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-34KA Dual IGBTMOD™ KA-Series Module
100 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100DU-34KA Units
Junction Temperature T Storage Temperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage (C-E SHORT) V Collector Current (Tc = 25°C) I Peak Collector Current (Tj 150°C) I Emitter Current** (Tc = 25°C) I Peak Emitter Current** I Maximum Collector Dissipation (Tc = 25°C) P
j
stg CES GES
C
CM
E
EM
c
Mounting Torque, M6 Main Ter minal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C 1700 Volts
±20 Volts 100 Amperes
200* Amperes
100 Amperes
200* Amperes
890 Watts
3500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I Gate Leakage Current I Gate-Emitter Threshold Voltage V Collector-Emitter Saturation Voltage V
CES GES
GE(th)
CE(sat)
VCE = V VGE = V
, VGE = 0V 1 mA
CES
, VCE = 0V 0.5 µA
GES
IC = 10mA, VCE = 10V 4.0 5.5 7.0 Volts
IC = 100A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts
IC = 100A, VGE = 15V, Tj = 125°C– 3.8 Volts Total Gate Charge Q Emitter-Collector Voltage* V
G
EC
VCC = 1000V, IC = 100A, VGE = 15V 450 nC
IE = 100A, VGE = 0V, Tj = 25°C– –4.6 Volts
IE = 100A, VGE = 0V, Tj = 125°C– 2.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Resistive Turn-on Delay Time t
d(on)
Load Rise Time t Switch Turn-off Delay Time t
d(off)
Times Fall Time t Reverse Recovery Time t Reverse Recovery Charge Q
ies oes res
r
f
rr
rr
VCE = 10V, VGE = 0V 2.4 nf
VCC = 1000V, IC = 100A, 350 ns
V
= V
GE1
= 15V, 150 ns
GE2
RG = 3.1, Resistive 550 ns
Inductive Load 800 ns
Switching Operation 600 ns
IE = 100A 5.8 µC
––14.0 nf
––0.75 nf
2
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-34KA Dual IGBTMOD™ KA-Series Module
100 Amperes/1700 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R Thermal Resistance, Junction to Case R Contact Thermal Resistance R Thermal Resistance R
* If you use this value, R
should be measured just under the chips.
th(f-a)
QPer IGBT 1/2 Module 0.14 °C/W
th(j-c)
DPer FWDi 1/2 Module 0.24 °C/W
th(j-c)
th(c-f)
th(j-c')
Per Module, Thermal Grease Applied 0.040 °C/W
QT
Measured Point 0.09* °C/W
c
(Under Chips - IGBT Part)
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25oC
15
VGE = 20V
150
, (AMPERES)
C
100
50
COLLECTOR CURRENT, I
0
0246810
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SATURATION VOLTAGE CHARACTERISTICS
10
8
, (VOLTS)
CE(sat)
6
COLLECTOR-EMITTER
(TYPICAL)
Tj = 25°C
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
0481216
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
14
12
IC = 200A
IC = 100A
IC = 40A
TRANSFER CHARACTERISTICS
(TYPICAL)
11
10
200
150
, (AMPERES)
C
VCE = 10V
Tj = 25°C T
= 125°C
j
100
9
8
20
50
COLLECTOR CURRENT, I
0
048121620
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
2
10
, (AMPERES)
E
1
10
EMITTER CURRENT, I
0
10
12345
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
(TYPICAL)
6
5
, (VOLTS)
4
CE(sat)
3
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
050100
2
10
, (nF)
res
1
10
, C
oes
, C
ies
0
10
CAPACITANCE, C
-1
10
10
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
VGE = 15V
COLLECTOR-CURRENT, IC, (AMPERES)
VGE = 0V f = 1MHz
-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
(TYPICAL)
Tj = 25°C
= 125°C
T
j
CAPACITANCE VS. V
(TYPICAL)
0
10
150
CE
C
ies
C
oes
C
res
1
10
200
10
2
3
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-34KA Dual IGBTMOD™ KA-Series Module
100 Amperes/1700 Volts
SWITCHING CHARACTERISTICS
4
10
t
f
t
3
d(off)
10
t
d(on)
2
10
SWITCHING TIME, (ns)
t
r
1
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
IMPEDANCE CHARACTERISTICS
-3
10
1
th(j-c)
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
= R
10
th
Z
HALF-BRIDGE
(TYPICAL)
VCC = 1000V V R T Inductive Load
2
10
TRANSIENT THERMAL
(IGBT)
-2
10
10
th(j-c)
-1
= 0.14°C/W
= ±15V
GE
= 3.1
G
= 125°C
j
0
10
REVERSE RECOVERY CHARACTERISTICS
3
10
VCC = 1000V V
GE
R
= 3.1
rr
10
G
T
= 25°C
j
Inductive Load
2
, (ns)
= ±15V
(TYPICAL)
t
rr
I
rr
10
10
3
, (AMPERES)
rr
2
20
16
, (VOLTS)
GE
12
IC = 100A
GATE CHARGE, V
VCC = 800V
GE
VCC = 1000V
8
REVERSE RECOVERY TIME, t
1
th(j-c)
-1
10
-2
10
10
1
10
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
-3
10
1
10
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
-2
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
10
(FWDi)
10
th(j-c)
2
-1
= 0.24°C/W
10
3
10
1
10
10
3
10
0
1
10
10
10
4
GATE-EMITTER VOLTAGE, V
1
REVERSE RECOVERY CURRENT, I
0
0 100 200
-1
-2
300
GATE CHARGE, QG, (nC)
400 600500
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-4
10
-3
10
-3
10
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-4
10
-3
10
-3
10
4
4
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