C&H Technology CM1000HA-28H User Manual

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Please contact the C&H Technology team for the following questions -

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM1000HA-28H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A
B

E

E

H

U - M4 THD
(2 TYP.)

L

G

S - M8 THD
(2 TYP.)

C

NF

E

Dimensions Inches Millimeters

G

J

D

L 0.79 20.0
M 0.77 19.5
N 0.75 19.0

P 0.61 15.6
Q 0.51 13.0
R 0.35 9.0

S M8 Metric M8

T 0.26 Dia. Dia. 6.5
U M4 Metric M4

AB

C

R

K

P

M

C

T - DIA.
(4 TYP.)

E

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.12 130.0
B 4.33±0.01 110.0±0.25
C 1.840 46.75
D 1.73±0.04/0.02 44.0±1.0/0.5
E 1.46±0.04/0.02 37.0±1.0/0.5
F 1.42 36.0
G 1.25 31.8
H 1.18 30.0

J 1.10 28.0

K 1.08 27.5

E

G

Q

Single IGBTMOD™
H-Series Module

1000 Amperes/ 1400 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Ser vo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM1000HA-28H is a 1400V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating V

CM 1000 28

CE(sat)

(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking

), 1000 Ampere Single

CES

Amperes Volts (x 50)

215

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM1000HA-28H
Single IGBTMOD™ H-Series Module

1000 Amperes/1400 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM1000HA-28H Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Max. Mounting Torque M8 Terminal Screws – 95 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Max. Mounting Torque M4 G-E Terminal Screws – 13 in-lb
Module Weight (Typical) – 1600 Grams
V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

RMS

–40 to +150 °C
–40 to +125 °C

1400 Volts

±20 Volts

1000 Amperes

2000* Amperes

1000 Amperes

2000* Amperes

5800 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 2.0 mA

CES

, VCE = 0V – – 0.5

GES

µ

A

IC = 100mA, VCE = 10V 5.0 6.5 8.0 Volts

IC = 1000A, VGE = 15V – 3.1 4.5 Volts

IC = 1000A, VGE = 15V, Tj = 150°C – 3.1 – Volts
Total Gate Charge Q
Diode Forward Voltage V

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

FM

VCC = 800V, IC = 1000A, VGS = 15V – 5355 – nC

IE = 10000A, VGS = 0V – – 4.0 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V, f = 1MHz – – 70 nF

VCC = 800V, IC = 1000A, – – 2000 ns

V

= V

GE1

= 15V, RG = 3.3Ω – – 1200 ns

GE2

IE = 1000A, diE/dt = –2000A/µs – – 300 ns
IE = 1000A, diE/dt = –2000A/µs – 10.5 –

– – 200 nF

–– 40nF
––800ns

––650ns

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.018 °C/W

Per IGBT – – 0.022 °C/W

Per FWDi – – 0.050 °C/W

216

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

0

0

CM1000HA-28H
Single IGBTMOD™ H-Series Module

1000 Amperes/1400 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

TRANSFER CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

2000

T

1600

= 25°C

j

V

GE

= 20V

14

15

1200

, (AMPERES)

800

C

I

400

0

0246810

SATURATION VOLTAGE CHARACTERISTICS

VCE, (VOLTS)

COLLECTOR-EMITTER

(TYPICAL)

10

8

6

, (VOLTS)

4

CE(sat)

V

2

0

048121620

4

10

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

t

d(off)

t

f

t

d(on)

t

r

2

10

COLLECTOR CURRENT IC, (AMPERES)

IC = 2000A
IC = 1000A

I

C

VCC = 800V
V
R
T

3

10

= 400A

GE
G

= 125°C

j

= ±15V

= 3.3Ω

, (nF)
, C

, C

CAPACITANCE, C

3

, (AMPERES)

rr

2

5

VGE = 15V

Tj = 25°C

= 125°C

T

4

j

3

, (VOLTS)

2

CE(sat)

V

1

0

0 400 800 1200 200

3

10

VGE = 0V

res

2

10

oes

ies

1

10

0

10

-1

10

20

IC = 1000A
T

= 25°C

j

16

, (VOLTS)

GE

IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

0

10

VCE, (VOLTS)

GATE CHARGE, V

VCC = 600V

10

GE

VCC = 800V

12

1

1600

CE

C

ies

C

oes

C

res

2

10

2000

1600

VCE = 10V

Tj = 25°C
T

= 125°C

j

13

12

1200

11

10

9
8

, (AMPERES)

800

C

I

400

0

048121620

4

10

Tj = 25°C

3

10

, (AMPERES)

E

I

2

10

1

10

1.0 1.5 4.0

REVERSE RECOVERY CHARACTERISTICS

3

10

di/dt = -2000A/µsec
T

= 25°C

j

, (ns)

rr

2

10

VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

VEC, (VOLTS)

t

rr

I

rr

3.0 3.52.52.0

(TYPICAL)

10

10

8

REVERSE RECOVERY TIME, t

1

4

10

10

1

10

2

10

EMITTER CURRENT, IE, (AMPERES)

3

10

10

4

10

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

1

0

0 2000 4000

GATE CHARGE, QG, (nC)

6000 1000

8000

217

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM1000HA-28H
Single IGBTMOD™ H-Series Module

1000 Amperes/1400 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.022°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.05 °C/W

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

218