C&H Technology CM1000DXL-24S User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM1000DXL-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A

B

Cs1
(52)

C

D

E

F

AM

Es2
(47)G2(46)

X(4 PLACES)

Cs2
(42)

U

DETAIL "A"

E1C2 (33)

E1C2 (32)

M

40

39

38

37

36

S

35

34

T

33

32

31

30

H

29

28

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

PQRNC

AC

H

AM

AF

AL

AK

AN

DETAIL "B"

AG

AH

DETAIL "A"

AS
AR

AP

AC

AB

C1(1)

C1(2)

E2(3)

E2(4)

G

J

K

L

K

L

Y

Z

AAFED

Z

AD

R

Es1

TH2

(62)G1(61)

(57)

Tr 1Tr2

Di1 Di2

AM AM

AT

AU AU AV AU

63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41

AE

1

2

V

3

W(6 PLACES)

4

56789101112131415161718192021222324252627

DETAIL "B"

TH1

Th

(56)

NTC

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0
B 5.39 137.0
C 4.79 121.7
D 4.61 117.2
E 4.33±0.02 110.0±0.5
F 3.72 94.5
G 0.6 15.14
H 0.26 6.5
J 0.53 13.5
K 0.14 3.6
L 0.3 7.75
M 0.016 4.05
N 1.53 39.0
P 0.86 22.0
Q 1.95 49.72
R 1.62 41.22
S 0.83 21.14
T 0.23 6.0
U 0.47 12.0
V 0.41 10.53
W M6 Metric M6
X 0.22 5.5 Dia.

Dimensions Inches Millimeters

Y 0.75 19.24
Z 0.86 22.0
AA 1.08 27.53
AB 0.14 3.5
AC 0.51 13.0
AD 0.19 3.0
AE 0.42 10.74
AF 0.67+0.04/-0.02 17.0+1.0/-0.5
AG 0.81 20.5
AH 0.29 7.4
AJ 0.05 1.2
AK 0.02 0.65
AL 0.04 1.15
AM 0.15 3.81
AN 0.5 12.5
AP 0.12 3.0
AQ 0.088 Dia. 2.25 Dia.
AR 0.102 Dia. 2.6 Dia.
AS 0.16 Dia. 4.3 Dia.
AT 0.67 16.9
AU 0.6 15.24
AV 0.75 19.05

Dual IGBTMOD™
NX-S Series Module

1000 Amperes/1200 Volts

AJ

AQ

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM1000DXL-24S is a 1200V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 1000 24

CE(sat)

Free-Wheel Diode

Heat Sinking

), 1000 Ampere Dual

V

CES

106/11 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module

1000 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 124°C)

*2,*11

IC 900 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

Emitter Current (TC = 25°C)

*2,*4

P

*2,*4,*11

I

Emitter Current (Pulse, Repetitive)*3 I

1200 Volts

CES

±20 Volts

GES

2000 Amperes

CRM

7500 Watts

tot

*1

900 Amperes

E

*1

2000 Amperes

ERM

Module

Characteristics Symbol Rating Units

Maximum Junction Temperature T

Maximum Case Temperature*2 T

Operating Junction Temperature T

Storage Temperature T

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*11 This module has 1000A size IGBT and FWDi chips. This limitation is based on the terminal design.

j(max)

j(max)

) rating.

rating.

20.9

32.6

46.0

72.6

73.6

86.0

0

87.0

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

2500 Volts

ISO

98.6

83.8

Th

Tr1

Tr1

Di1

Di1

Tr2

Tr2

Di2

Di2

27.257.6 42.281.8
0

Tr1

Tr1

Tr1

Di1

Di1

Di1

Tr2

Tr2

Tr2

Di2

Di2

Di2

0

26.4

40.0

72.2

73.2

85.8

86.8

LABEL SIDE

94.0 53.2 38.079.2 23.0

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

0

2 06/11 Rev. 3