C&H Technology CM1000DU-34NF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM1000DU-34NF

A
D

P

(8 PLACES)

L

TC MEASURED POINTS
(THE SIDE OF CU BASEPLATE)

L

M

H H HHH H

K

G

U

H H

E

F

F

C2E1

E2

C1

G2
E2

G1

E2

C

C2E1

C

G E

E G

C1

E1

C2

LABEL

V

S

T

BUC

J

J

G G

R (9 PLACES)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Mega Power Dual™
IGBTMOD

1000 Amperes/1700 Volts

Description:

Powerex IGBTMOD™ Modules are
designed for use in switching two
IGBT applications. Each
module consists of a half-bridge
configuration, with each transistor
having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.91 150.0

B 5.10 129.5

C 1.67±0.01 42.5±0.25

D 5.41±0.01 137.5±0.25

E 6.54 166.0

F 2.91±0.01 74.0±0.25

G 1.65 42.0

H 0.55 14.0

J 1.50±0.01 38.0±0.25

K 0.16 4.0

Housing Type (J.S.T. MFG. CO. LTD)

S = VHR-2N
T = VHR-5N

Dimensions Inches Millimeters

L 1.36 +0.04/-0.02 34.6 +1.0/-0.5

M 0.075±0.08 1.9±0.2

P 0.26 6.5

R M6 Metric M6

U 0.62 15.7

V 0.71 18.0

W 0.75 19.0

X 0.43 11.0

Y 0.83 21.0

Z 0.41 10.5

AA 0.22 5.5

thermal management.

Features:

£ Low Drive Power
£ Low V
£

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£

High Power UPS

£ Large Motor Drives
£ Utility Interface Inverters

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM1000DU-34NF
is a 1700V (V
Dual IGBTMOD Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 1000 34

), 1000 Ampere

CES

CES

102/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM1000DU-34NF
Mega Power Dual™ IGBTMOD

1000 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Ratings Symbol CM1000DU-34NF Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E SHORT) V

Gate-Emitter Voltage (C-E SHORT) V

Collector Current DC (TC' = 104°C)** IC 1000 Amperes

Peak Collector Current (Tj ≤ 150°C) I

Emitter Current (TC = 25°C)*** IE 1000 Amperes

Peak Emitter Current*** IEM 2000* Amperes

Maximum Collector Dissipation (Tj < 150°C) (TC = 25°C) PC 3900 Watts

Mounting Torque, M6 Mounting Screws – 40 in-lb

Mounting Torque, M6 Main Terminal Screw – 40 in-lb

Weight (Typical) – 1400 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

-40 to 125 °C

stg

1700 Volts

CES

±20 Volts

GES

CM

3500 Volts

iso

2000* Amperes

Static Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

CES

V

GES

I

GE(th)

IC = 1000A, VGE = 15V, Tj = 25°C – 2.2 2.8 Volts

CE(sat)

VCE = V

GE

= 100mA, VCE = 10V 5.5 7.0 8.5 Volts

C

, VGE = 0V – – 1 mA

CES

= V

, VCE = 0V – – 5 µA

GES

(Without Lead Resistance) (Chip) IC = 1000A, VGE = 15V, Tj = 125°C – 2.45 – Volts

Module Lead Resistance R

I

(lead)

= 1000A, Terminal-chip – 0.286 – mΩ

C

Total Gate Charge QG VCC = 1000V, IC = 1000A, VGE = 15V – 6000 – nC

Emitter-Collector Voltage*** VEC I

= 1000A, VGE = 0V – 2.3 3 Volts

E

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr I

Switch Turn-off Delay Time t

Times Fall Time tf R

Diode Reverse Recovery Time*** trr Inductive Load – – 450 ns

Diode Reverse Recovery Charge*** Qrr Switching Operation – 90 – µC

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** TC' measurement points is just under the chips. If this value is used, R
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

– – 220 nF

ies

V

oes

– – 4.7 nF

res

V

d(on)

V

d(off)

= 10V, VGE = 0V – – 25 nF

CE

= 1000V, – – 600 ns

CC

= 1000A, IE = 1000A, – – 150 ns

C

= V

GE1

should be measured just under the chips.

th(f-a)

= 15V, – – 900 ns

GE2

= 0.47Ω, – – 200 ns

G

rating.

j(max)

2 02/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

3

10

2

10

1

10

0

10

-1

10

1

0.5 1. 5 1.0 3.0 3.52.0 2.5 4.0

10

2

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

10

4

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

048121620

8

6

4

2

0

Tj = 25°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

3

4

0500

2

1

0

25001500 20001000

VGE = 15V

Tj = 25°C
T

j

= 125°C

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 400A

IC = 2000A

IC = 1000A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0246 810

VGE = 20V

10

11

12

15

13

9

8

Tj = 25°C

1200

400

0

800

1600

2000

COLLECTOR CURRENT, I

C

, (AMPERES)

1200

400

0

800

1600

2000

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

TRANSFER CHARACTERISTICS

(TYPICAL)

0812 16 20

VCE = 10V

Tj = 25°C
T

j

= 125°C

4

10

-1

CM1000DU-34NF
Mega Power Dual™ IGBTMOD

1000 Amperes/1700 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

T

Thermal Resistance, Junction to Case R

T

Contact Thermal Resistance R

External Gate Resistance RG 0.47 — 4.7 Ω

Q Per IGBT 1/2 Module, TC Reference — — 0.032 °C/W

th(j-c)

D Per FWDi 1/2 Module, TC Reference — — 0.053 °C/W

th(j-c)

Q Per IGBT 1/2 Module, – – 0.014 °C/W

th(j-c')

Reference Point Under Chip

C

D Per FWDi 1/2 Module, TC Reference – – 0.023 °C/W

th(j-c')

Reference Point Under Chip

C

Per 1/2 Module, Thermal Grease Applied – 0.016 – °C/W

th(c-f)

302/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

20

0

16

12

8

4

0

COLLECTOR CURRENT, IC, (AMPERES)

10

4

10

2

10

3

10

3

10

2

10

1

SWITCHING TIME, (ns)

2000 4000 1000080006000

VCC = 1000V

t

d(off)

t

d(on)

t

r

E

rr

E

on

E

off

VCC = 1000V
V

GE

= 15V

R

G

= 0.47Ω

T

j

= 125°C

Inductive Load

t

f

EMITTER CURRENT, I

E

, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

10

4

10

2

10

3

10

3

10

2

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

t

rr

I

rr

VCC = 1000V
V

GE

= 15V

R

G

= 0.47Ω

T

j

= 125°C

Inductive Load

VCC = 800V

IC = 1000A

10

4

10

4

GATE RESISTANCE, R

G

, (Ω)

10

1

10

2

10

3

VCC = 1000V
V

GE

= 15V

T

j

= 125°C

I

C

= 1000A

Inductive Load

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

on

, E

off

, E

rr

, (mJ/PULSE)

10

2

10

3

10

4

10

0

10

2

10

1

10

3

VCC = 1000V
V

GE

= 15V

T

j

= 125°C

R

G

= 0.47Ω

Inductive Load

TIME, (s)

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Per Unit Base
R

th(j-c)

=

0.014°C/W
(IGBT)
R

th(j-c)

=

0.023°C/W
(FWDi)
Single Pulse
T

C

= 25°C

032154

GATE CHARGE, V

GE

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

SWITCHING LOSS, E

on

, E

off

, E

rr

, (mJ/PULSE)

SWITCHING LOSS VS. GATE RESISTANCE

(TYPICAL)

SWITCHING LOSS VS. COLLECTOR CURRENT

(TYPICAL)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

E

rr

E

on

E

off

10

0

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

CM1000DU-34NF
Mega Power Dual™ IGBTMOD

1000 Amperes/1700 Volts

4 02/10 Rev. 1