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D-PAK
PRODUCT SUMMARY
VF at 5 A 1 V
I
FSM
V
RRM
8EWS..SPbF High Voltage Series
Surface Mountable
Input Rectifier Diode, 8 A
DESCRIPTION/FEATURES
cathode
1
Anode
Base
4, 2
3
Anode
200 A
800/1200 V
The 8EWS..SPbF rectifier High Voltage Series
has been optimized for very low forward
voltage drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.
The high reverse voltage range available allows design of
input stage primary rectification with outstanding voltage
surge capability.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free.
Vishay High Power Products
Available
RoHS*
COMPLIANT
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 µm) copper
Aluminum IMS, R
Aluminum IMS with heatsink, R
Note
•T
= 55 °C, TJ = 125 °C, footprint 300 mm
A
= 15 °C/W 2.5 2.8
thCA
= 5 °C/W 5.5 6.5
thCA
2
1.2 1.6
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 8 A
800/1200 V
200 A
8 A, TJ = 25 °C 1.10 V
- 55 to 150 °C
VOLTAGE RATINGS
V
, MAXIMUM
PART NUMBER
8EWS08SPbF 800 900
8EWS12SPbF 1200 1300
RRM
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
0.5
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94349 For technical questions, contact: diodes-tech@vishay.com
Revision: 22-Jul-08 1
www.vishay.com
8EWS..SPbF High Voltage Series
Vishay High Power Products
Surface Mountable
Input Rectifier Diode, 8 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1450 A2√s
F(AV)
I
FSM
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
TC = 105 °C, 180 ° conduction half sine wave 8
10 ms sine pulse, rated V
applied 170
RRM
10 ms sine pulse, no voltage reapplied 200
10 ms sine pulse, rated V
applied 130
RRM
10 ms sine pulse, no voltage reapplied 145
FM
8 A, TJ = 25 °C 1.1 V
t
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 0.50
J
V
= Rated V
R
RRM
20 mΩ
0.82 V
0.05
A
A
mA
2
s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Soldering temperature T
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
Marking device Case style D-PAK (TO-252AA) 8EWS12S
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
T
, T
J
Stg
S
R
DC operation 2.5
thJC
(1)
62
R
thJA
- 55 to 150
240
1g
0.03 oz.
°C
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94349
2 Revision: 22-Jul-08
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